Vishay VS-10BQ040PbF Data Sheet
SMB
Schottky Rectifier, 1.0 A
Cathode Anode
VS-10BQ040PbF
Vishay Semiconductors
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
V
R
1.0 A
40 V
DESCRIPTION
The VS-10BQ040PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 1.0 A
40 V
tp = 5 μs sine 430 A
1.0 Apk, TJ = 125 °C 0.49 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-10BQ040PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 112 °C, rectangular waveform 1.0 A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 45
TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ
AS
Current decaying linearly to zero in 1 μs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
430
A
1.0 A
Document Number: 94112 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
VS-10BQ040PbF
dP
tot
dT
J
-------------
1
R
thJA
--------------<
Vishay Semiconductors
Schottky Rectifier, 1.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.70
(1)
1 A
2 A 0.64
Maximum reverse leakage current
See fig. 2
I
RM
Typical junction capacitance C
Typical series inductance L
S
TJ = 25 °C
(1)
T
= 125 °C 4
J
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 80 pF
T
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of charge dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.53
0.49
0.1
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (similar DO-214AA) V1F
Notes
(1)
thermal runaway condition for a diode on its own heatsink
(1)
T
, T
J
Stg
(2)
R
thJL
R
thJA
DC operation 36
- 55 to 150 °C
80
0.10 g
0.003 oz.
V
mA
°C/W
(2)
Mounted 1" square PCB
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94112
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 23-Jun-10
10
1
VFM - Forward Voltage Drop (V)
I
F
- Instantaneous Forward
Current (A)
0.1
0.2 0.4 0.6 0.8 1.0
TJ = 25 °C
T
J
= 150 °C
T
J
= 125 °C
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
100
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
D = 0.75
D = 0.33
D = 0.25
D = 0.20
D = 0.50
VS-10BQ040PbF
Schottky Rectifier, 1.0 A
10
1
0.1
0.01
0.001
- Reverse Current (mA)
R
I
0.0001
0
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
515
Vishay Semiconductors
TJ = 150 °C
10 4020 30
25 35
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Reverse Current vs. Reverse Voltage
1000
100
TJ = 25 °C
- Junction Capacitance (pF)
T
C
10
0
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94112 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 23-Jun-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Characteristics (Per Leg)
thJC
4010 20 30
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