VISHAY VLWTG9600 Technical data

19232

TELUX™

FEATURES

• High luminous flux

• Supreme heat dissipation: R

• High operating temperature:

• Packed in tubes for automatic insertion

• Luminous flux, forward voltage and color

• Small mechanical tolerances allow precise usage

• Lead (Pb)-free device - RoHS compliant

• ESD-withstand voltage: up to 1 kV accordance to

• Component in accordance to RoHS 2002/95/EC

• Compatible with wave solder processes according

• Automotive qualified

VLWTG9600

Vishay Semiconductors

= 90 K/W

thJP

T

= - 40 °C to + 110 °C

amb

categorized for each tube

of external reflectors or light guides

JESD22-A114-B

and WEEE 2002/96/EC

to CECC 00802 and J-STD-020C

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DESCRIPTION

The VLWTG9600 is a clear, non diffused LED for
applications where high luminous flux is required.

It is designed in an industry standard 7.62 mm square

APPLICATIONS

• Exterior lighting

• Replacement of small incandescent lamps

• Traffic signals and signs

package utilizing highly developed InGaN technology.
The supreme heat dissipation of VLWTG9600 allows

applications at high ambient temperatures.
All packing units are binned for luminous flux, forward

voltage and color to achieve the most homogenous
light appearance in application.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

• Package: TELUX™

• Product series: power

• Angle of half intensity: ± 30°

PARTS TABLE

PART COLOR, LUMINOUS FLUX TEC HNO LOGY

VLWTG9600

True green, φ

= 2500 mlm (typ.)

V

InGaN on SiC

Document Number 81269
Rev. 1.2, 29-Oct-07

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1

VLWTG9600

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS1) VLWTG9600

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

= 10 µA V

Reverse voltage

DC Forward current

Surge forward current

Power dissipation

Junction temperature

Operating temperature range

Storage temperature range

I

R

≤ 50 °C I

T

amb

t

≤ 10 µs I

p

T

T

F

FSM

P

T

amb

stg

R

V

j

t ≤ 5 s, 1.5 mm from body

Soldering temperature

preheat temperature

T

sd

100 °C/30 sec.

Thermal resistance junction/ambient

Thermal resistance junction/pin

Note:

1)

T

= 25 °C, unless otherwise specified

amb

with cathode heatsink

of 70 mm

2

R

thJA

R

thJP

OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLWTG9600, TRUE GREEN

PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT

= 50 mA, R

Total flux

Luminous intensity/total flux

Dominant wavelength

Peak wavelength

Angle of half intensity

I

F

= 50 mA, R

I

F

= 50 mA, R

I

F

= 50 mA, R

I

F

= 50 mA, R

I

F

Total included angle 90 % of Total Flux Captured ϕ 100 deg

= 50 mA, R

Forward voltage

I

F

Reverse voltage

Junction capacitance

Temperature coefficient of λ

Note:

1)

T

= 25 °C, unless otherwise specified

amb

dom

V

R

= 200 °K/W φ

thJA

= 200 °K/W IV/φ

thJA

= 200 °K/W λ

thJA

= 200 °K/W λ

thJA

= 200 °K/W

thJA

= 200 °K/W V

thJA

= 10 µA V

I

R

= 0, f = 1 MHz C

IF = 30 mA TCλ

V

V

d

p

2000 2500 mlm

509 523 535 nm

ϕ ± 30 deg

F

R

j

dom

510 V

5V

50 mA

0.1 A

230 mW

100 °C

- 40 to + 100 °C

- 55 to + 100 °C

260 °C

200 K/W

90 K/W

0.7 mcd/mlm

518 nm

3.9 4.7 V

50 pF

0.02 nm/K

LUMINOUS FLUX CLASSIFICATION

TRUE GREEN

GROUP

D 2000 3000

E 2500 3600

F 3000 4200

Note:
Luminous flux is tested at a current pulse duration of 25 ms and an
accuracy of ± 11 %.
The above type numbers represent the order grous which include
only a few brightness groups. Only one group will be shipped in one
tube (there will be no mixing of two groups on each tube). In order to
ensure availability, single brightness groups will not be orderable. In
a similar manner for colors where wavelength groups are measured
and binned, single wavelength groups will be shipped in any one
tube. In order to ensure availability, single wavelength groups will not
be orderable.

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LUMINOUS FLUX (MLM)

MIN. MAX.

COLOR CLASSIFICATION

TRUE GREEN

GROUP

2 509 517

3 515 523

4 521 529

5 527 535

Note:
Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.

DOM. WAVELENGTH (NM)

MIN. MAX.

Document Number 81269

Rev. 1.2, 29-Oct-07

TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

VLWTG9600

Vishay Semiconductors

60

50

40

30

20

- Forward Current (mA)

F

I

10

0

16067

= 200 K/W

R

thJA

0 8020 40 60 100 120

T

- Ambient Temperature (°C)

amb

Figure 1. Forward Current vs. Ambient Temperature for InGaN

0°

10° 20°

30°

40°

1.0

0.9

0.8

- Relative Luminous Intensity

0.7

V rel

I

16006

0.4 0.2 0 0.2 0.4

0.6

50°

60°

70°

80°

0.6

Figure 2. Rel. Luminous Intensity vs. Angular Displacement

230

220

Padsize 8 mm
per Anode Pin

2

210

200

in K/W

190

thJA

R

180

170

160

0 50 100 150 200 250 300

16009

Cathode Padsize mm

2

Figure 4. Thermal Resistance Junction Ambient vs.

Cathode Padsize

100

true green

90

80

70

60

50

40

30

- Forward Current (mA)

20

F

I

10

0

2.5 3.0 3.5 4.0 4.5 5.0 5.5

16037

- Forward Voltage (V)

V

F

Figure 5. Forward Current vs. Forward Voltage

100

90

80

70

60

50

40

30

20

% Total Luminous Flux

10

0

0 25 50 75 100 125

16201

Total Included Angle (Degrees)

Figure 3. Percentage Total Luminous Flux vs.

Total Included Angle for 90 ° Emission Angle

Document Number 81269
Rev. 1.2, 29-Oct-07

1.8

1.6

true green

IF = 50 mA

1.4

1.2

1.0

0.8

0.6

- Relative Luminous Flux

0.4

V rel

0.2

Φ

0.0

- 40 - 20 0 20 40 60 80 100

16056

T

- Ambient Temperature (°C)

amb

Figure 6. Rel. Luminous Flux vs. Ambient Temperature

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