VISHAY VLMO31 Technical data

SMD LED in PLCC2 Package
• Lead (Pb)-free product - RoHS compliant
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Compatible with IR-Reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020C
94 8553
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit I
Vmax/IVmin
1.6
• Lead (Pb)-free device
• preconditioning: acc. to JEDEC Level 2a
ESD-withstand voltage up to 2 kV according to JESD22-A114-B
VLMO31..
Vishay Semiconductors
e3
DESCRIPTION
This device has been designed for applications requir­ing narrow brightness and color selection.
The package of this device is the PLCC-2. It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is filled up with clear epoxy.
APPLICATIONS
• Automotive: Backlighting in dashboards and switches
• Telecommunication: Indicator and backlighting in telephone and fax
• Indicator and backlight for audio and video equip­ment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHN OLO GY
VLMO31J1K2-GS08 Soft orange, I
VLMO31J1K2-GS18 Soft orange, I
VLMO31J1L2-GS08 Soft orange, I
VLMO31J1L2-GS18 Soft orange, I
VLMO31K1L2-GS08 Soft orange, I
VLMO31K1L2-GS18 Soft orange, I
= (4.5 to 11.2) mcd 60° GaAsP on GaP
V
= (4.5 to 11.2) mcd 60° GaAsP on GaP
V
= (4.5 to 18) mcd 60° GaAsP on GaP
V
= (4.5 to 18) mcd 60° GaAsP on GaP
V
= (7.1 to 18) mcd 60° GaAsP on GaP
V
= (7.1 to 18) mcd 60° GaAsP on GaP
V
Document Number 81333 Rev. 1.0, 05-May-06
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1
VLMO31..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1), VLMO31..
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
DC Forward current T
Surge forward current t
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t 5 s T
Thermal resistance junction/ambient
Note:
1)
T
= 25 °C unless otherwise specified
amb
2)
Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1), VLMO31.., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
Note:
1)
T
= 25 °C unless otherwise specified
amb
2)
in one Packing Unit I
2)
2)
Vmax/IVmin
60 °C I
amb
10 µs I
p
mounted on PC board (pad size > 16 mm
I
= 10 mA
F
= 10 mA λ
F
= 10 mA λ
F
= 10 mA ϕ ± 60 deg
F
= 20 mA V
F
= 10 μAV
R
= 0, f = 1 MHz C
R
1.6
VLMO31J1K2
VLMO31J1L2
VLMO31K1L2
V
R
F
FSM
V
j
amb
stg
2
)
sd
R
thJA
I
V
I
V
I
V
d
p
F
R
j
4.5 11.2 mcd
4.5 18 mcd
7.1 18 mcd
598 611 nm
6V
6V
30 mA
0.5 A
100 mW
100 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
400 K/W
605 nm
2.0 2.8 V
15 pF
LUMINOUS INTENSITY CLASSIFICATION
GROUP LIGHT INTENSITY [MCD]
STANDARD OPTIONAL MIN MAX
J
K
L
M
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %.
The above Type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be or­derable.
In a similar manner for colors where wavelength groups are mea­sured and binned, single wavelength groups will be shipped on any one reel.
In order to ensure availability, single wavelength groups will not be orderable.
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1 4.5 5.6 2 5.6 7.1 1 7.1 9.0 2 9.0 11.2 1 11.2 14.0 2 14.0 18.0 1 18.0 22.4 2 22.4 28.0
CROSSING TABLE
VISHAY OSRAM
VLMO31J1K2 LOT670-J1K2 VLMO31J1L2 LOT670-J1L2 VLMO31K1L2 LOT670-K1L2
COLOR CLASSIFICATION
SOFT ORANGE
GROUP
1 598 601 2 600 603 3 602 605 4 604 607 5 606 609 6 608 611
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
DOM. WAVELENGTH (NM)
MIN. MAX.
Document Number 81333
Rev. 1.0, 05-May-06
TYPICAL CHARACTERISTICS
p
T
= 25 °C, unless otherwise specified
amb
VLMO31..
Vishay Semiconductors
60
50
40
30
20
- Forward Current (mA)
F
I
10
95 10905
0
T
- Ambient Temperature (°C)
amb
100806040200
Figure 1. Forward Current vs. Ambient Temperature
10000
T
< 60 °C
amb
0.02
0.05
1000
100
10
F
I - Forward Current (mA)
tp/T = 0.005
0.2
0.5
DC
0.01
0.1
1.2
Soft Orange
1.0
0.8
0.6
0.4
0.2
Vrel
I- Relative Luminous Intensity
0
570 590 610 630 650
95 10324
λ - Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
100
Soft Orange
10
1
F
I- Forward Current (mA)
670
1
0.01 0.1 1 10
t
95 9985
- Pulse Length (ms)
100
Figure 2. Forward Current vs. Pulse Length
1.0
0.9
0.8
- RelativeLuminous Intensity
0.7
v rel
I
95 10319
0.4 0.2 0 0.2 0.4
0.6
10° 20°
30°
40°
50°
60°
70°
8
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 81333 Rev. 1.0, 05-May-06
0.1 5 4 3 2 1 0
- Forward Voltage (V)
95 9990
V
F
Figure 5. Forward Current vs. Forward Voltage
10
Soft Orange
1
0.1
v rel
I- Relative Luminous Intensity
0.01 10 1001
I
95 9997
- Forward Curren t (mA)
F
Figure 6. Relative Luminous Intensity vs. Forward Current
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