VISHAY VLMKE340 Technical data
19211
Bicolor SMD LED PLCC-4
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
• EIA and ICE standard package
• Compatible with automatic placement
equipment
• Suitable for IR reflow and TTW soldering
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
• Lead (Pb)-free product - RoHS compliant lead (Pb)-free soldering
• JEDEC level 2a
≤ 1.6
VLMKE340.
Vishay Semiconductors
e3
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the VLMKE340. is the PLCC-4.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
VLMKE3400-GS08
VLMKE3400-GS18
VLMKE3401-GS08
VLMKE3401-GS18
Red/yellow, I
Red/yellow, I
Red/yellow, I
Red/yellow, I
> 56 mcd
V
> 56 mcd
V
> 71 mcd
V
> 71 mcd
V
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 81229
Rev. 1.1, 30-Aug-07
www.vishay.com
1
VLMKE340.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMKE340.
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
Reverse voltage per diode
2)
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
IR = 10 µA V
≤ 80 °C I
T
amb
t
≤ 10 µs I
p
mounted on PC board
(pad size > 16 mm
= 20 mA
I
F
= 20 mA λ
I
F
I
= 20 mA λ
F
= 20 mA
I
F
I
= 20 mA V
F
= 10 µA V
I
R
V
= 0, f = 1 MHz C
R
2
)
VLMKE3400
VLMKE3401
T
T
R
F
FSM
P
T
amb
stg
thJA
R
6V
30 mA
0.1 A
V
j
80 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
560 K/W
I
V
I
V
d
p
56 180 mcd
71 140 mcd
630 nm
643 nm
ϕ ± 60 deg
F
R
j
6V
1.9 2.6 V
15 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMKE340., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
www.vishay.com
2
= 20 mA
I
F
= 20 mA λ
I
F
I
= 20 mA λ
F
= 20 mA
I
F
= 20 mA V
I
F
= 10 µA V
I
R
= 0, f = 1 MHz C
V
R
VLMKE3400
VLMKE3401
I
V
I
V
d
p
90 280 mcd
112 224 mcd
581 588 594 nm
590 nm
ϕ ± 60 deg
F
R
j
6V
22.6V
15 pF
Document Number 81229
Rev. 1.1, 30-Aug-07
VLMKE340.
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS TLMKE34..1)
RED
Q2
90...112 mcd
Y
E
L
L
O
W
R1
112...140 mcd
R2
140...180 mcd
S1
180...224 mcd
S2
224...280 mcd
Note:
1)
followed by 00 or 01
COLOR CLASSIFICATION
GROUP
1 581 584
2 583 586
3 585 588
4 587 590
5 589 592
6 591 594
P2
56...71 mcd
Q1
71...90 mcd
Q2
90...112 mcd
R1
112...140 mcd
00 00 00 00 00
00
00
00
00
01
00
01
00
01
00
01
00
01
00
01
00
01
00
01
00
01
00 00 00 00 00
DOMINANT WAVELENGTH (NM)
YEL L O W
MAX MAX
R2
140...180 mcd
00
00
00
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
40
35
30
I - Forward Current (mA)
19476
25
20
15
10
F
5
0
2 chips on
0 1020304050607080 90 100
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
60 °C
1 chip on
80 °C
1000
- Forward Current (mA)
FM
I
16621
tP/T = 0.01
0.02
0.05
100
0.2
0.5
10
0.01 0.1 1 10 100
tP - Pulse Length (ms)
0.1
1
Figure 2. Forward Current vs. Pulse Duration
Document Number 81229
Rev. 1.1, 30-Aug-07
www.vishay.com
3
Loading...