• Compatible with IR-reflow, vapor phase
and wave solder processes according to
CECC 00802 and J-STD-020C
• Preconditioning: acc. to JEDEC Level 2a
• Automotive qualified
19225
• Lead (Pb)-free device
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
VLMK33..
Vishay Semiconductors
JESD22-A114-B
e3
DESCRIPTION
The VLMK33.. series is an advanced modification of
the Vishay VLMK33.. series. It is designed to incorporate larger chips, therefore, capable of withstanding a
50 mA drive current.
The package of the VLMK33.. is the PLCC-2 (equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
APPLICATIONS
• Interior and exterior lighting
• Indicator and backlighting purposes for audio,
video, LCDs, switches, symbols, illuminated advertising etc.
• Illumination purpose, alternative to incandescent
lamps
• Automotive qualified
• General use
PARTS TABLE
PARTCOLOR, LUMINOUS INTENSITYANGLE OF HALF INTENSITY (± ϕ)TECHNOLOGY
> (90 to 355) mcd
VLMK33Q2T1-GS08
VLMK33Q2T1-GS18
VLMK33R1S2-GS08
VLMK33R1S2-GS18
VLMK33S1T1-GS08
VLMK33S1T1-GS18
Red, I
V
Red, I
> (90 to 355) mcd
V
Red, I
= (112 to 280) mcd
V
Red, I
= (112 to 280) mcd
V
Red, I
= (180 to 355) mcd
V
Red, I
= (180 to 355) mcd
V
60°AlInGaP on GaAs
60°AlInGaP on GaAs
60°AlInGaP on GaAs
60°AlInGaP on GaAs
60°AlInGaP on GaAs
60°AlInGaP on GaAs
Document Number 81350
Rev. 1.0, 11-Aug-06
www.vishay.com
1
VLMK33..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) VLMK33..
PARAMETERTEST CONDITIONSYMBOLVALUEUNIT
Reverse voltage
DC Forward currentI
Power dissipationP
Junction temperatureT
Operating temperature rangeT
Storage temperature rangeT
Soldering temperaturet ≤ 5 sT
Thermal resistance junction/ambientmounted on PC board (pad size > 16 mm
Note:
1)
T
= 25 °C unless otherwise specified
amb
2) Driving LED in reverse direction is suitable for a short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1), VLMK33.., RED
PARAMETERTEST CONDITIONPARTSYMBOLMINTYP.MAXUNIT
Luminous intensityI
Luminous flux/Luminous intensity
Dominant wavelength
Peak wavelength
Spectral bandwidth
at 50 % I
Angle of half intensity
Forward voltage
Reverse current
Note:
1)
T
= 25 °C unless otherwise specified
amb
rel max
2)
2
)R
= 20 mA
F
VLMK33Q2T1
VLMK33R1S2
VLMK33S1T1
= 20 mAλ
I
F
= 20 mAλ
I
F
φ
I
V
I
V
I
V
V/IV
d
p
V
amb
stg
thJA
R
F
V
j
sd
5V
50mA
130mW
125°C
- 40 to + 100°C
- 40 to + 100°C
260°C
400K/W
90355mcd
112280mcd
180355mcd
3.14mlm/mcd
611617624nm
624nm
IF = 20 mAΔλ18nm
= 20 mA
I
F
I
= 20 mAV
F
= 5 VV
V
R
ϕ± 60deg
F
R
1.92.5V
0.0110μA
LUMINOUS INTENSITY CLASSIFICATION
GROUP
Q17190
Q290112
R1112140
R2140180
S1180224
S2224280
T1280355
T2355450
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type Numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will be not orderable. In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel. In order to ensure availability, single wavelength
groups will be not orderable.
www.vishay.com
2
LUMINOUS INTENSITY (MCD)
MINMAX
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
GROUP
RED
MINMAX
1611618
2614622
3
4
5
6
Note:
Wavelength are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm
CROSSING TABLE
VISHAYOSRAM
VLMK33Q2T1LAT676-Q2T1
VLMK33R1S2LAT676-R1S2
VLMK33S1T1LAT676-S1T1
Document Number 81350
Rev. 1.0, 11-Aug-06
TYPICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified
amb
VLMK33..
Vishay Semiconductors
100
90
80
70
R
60
= 400 K/W
thJA
50
40
30
20
- Forward Current (mA)
F
I
10
0
10255075100125
T
16784
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature
0.12
0.10
0.08
0.06
tp/T = 0.005
0.05
0.5
0.04
F
I- Forward Current (A)
0.02
0.00
10-510-410-310-210-110010110
17044
t
- Pulse Length (s)
p
2
Figure 2. Forward Current vs. Pulse Length
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Vrel
I - Relative Luminous Intensity
0.1
0.0
16007
Red
570 580 590 600 610 620 630 640 650 660 670
λ - Wavelength (nm)
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
100
90
Red
80
70
60
50
40
30
F
20
I - Forward Current (mA)
10
0
1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
17047
V
- Forward Voltage (V)
F
Figure 5. Forward Current vs. Forward Voltage
0°
10°20°
1.0
0.9
0.8
- Relative Luminous Intensity
0.7
V rel
I
95 10319
0.40.200.20.4
0.6
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 81350
Rev. 1.0, 11-Aug-06
30°
40°
50°
60°
70°
80°
10.00
Red
1.00
0.10
Vrel
I - Relative Luminous Intensity
0.01
1.00 10.00 100.00
17037
- Forward Current (mA)
I
F
Figure 6. Change of Dominatn Wavelenght vs. Forward Current
www.vishay.com
3
VLMK33..
Vishay Semiconductors
2.5
Red
2.0
1.5
1.0
0.5
V rel
I - Relative Luminous Intensity
0.0
- 50 - 250255075100
17035
T
- Ambient Temperature (°C)
amb
Figure 7. Relative Luminous Intensity vs. Amb. Temperature
6
Red
4
2
0
- 2
250
200
150
50 mA
Re d
100
30 mA
50
0
10 mA
- 50
- 100
- 150
F
V - Change of Forward Voltage (mV)
- 200
- 50 - 250255075100
17034
T
- Ambient Temperature (°C)
amb
Figure 9. Change of Forward Voltage vs. Ambient Temperature
- 4
- Change of Dom. Wavelength (nm)
d
- 6
- 50 - 250255075100
- Ambient Temperature (°C)
T
17036
amb
Figure 8. Change of Dominant Wavelength vs.
Ambient Temperature
PACKAGE DIMENSIONS IN MM
3. 5 ± 0.2
0.10
1.75 ±
Pin identification
CA
+ 0.15
2.8
Ø 2.4
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
95 11314-1
Issue: 8; 22.11.05
2.2
technical drawings
according to DIN
specifications
0.9
Mounting Pad Layout
2.6 (2.8)
1.6 (1.9)
Dimensions: IR Reflow and Vaporphase
(Wave Soldering)
1.2
4
area covered with
solder resist
4
www.vishay.com
4
Document Number 81350
Rev. 1.0, 11-Aug-06
METHOD OF TAPING/POLARITY AND TAPE AND REEL
VLMK33..
Vishay Semiconductors
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed
component cavities, covered by a top tape.
Adhesive Tape
Blister Tape
Component Cavity
94 8670
TAPING OF VLM.3..
5.75
5.25
2.2
2.0
4.0
8.3
7.7
3.6
0.25
94 8668
3.5
Anode
Cathode
1.6
1.4
3.1
3.6
3.4
1.85
1.65
2.05
1.95
4.1
3.9
4.1
3.9
Figure 10.Tape dimensions in mm for PLCC-2
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
10.0
13.00
12.75
14.4 max.
9.0
94 8665
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
180
178
120°
4.5
3.5
2.5
1.5
Figure 11.Reel dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERED
10.4
13.00
12.75
14.4 max.
8.4
62.5
60.0
18857
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
120°
4.5
3.5
2.5
1.5
321
329
Figure 12.Reel dimensions - GS18
Document Number 81350
Rev. 1.0, 11-Aug-06
www.vishay.com
5
VLMK33..
255
240 °C
217 °C
Vishay Semiconductors
SOLDERING PROFILEBARCODE-PRODUCT-LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
Preconditioning acc. to JEDEC Level 2a
300
255 °C
250
200
150
Temperature (°C)
100
max. Ramp Up 3 °C/s
50
0
050100150200250300
19885
max. 120 s
Time (s)
max. 100 s
max. Ramp Down 6 °C/s
Figure 13.Vishay Lead (Pb)-free Reflow Soldering Profile
(acc. to J-STD-020C)
300
250
200
150
100
Temperature (°C)
50
0
TTW Soldering
235 °C...260 °C
first wave
ca. 200 K/s
100 °C...130 °C
0
(acc. to CECC00802)
5 s
2 K/s
forced cooling
50
100
second
wave
ca. 2 K/s
Time (s)
Lead Temperature
dotted line: process limits
150
max. 260 °C
245 °C
max. 30 s
max. 2 cycles allowed
948626-1
full line: typical
ca. 5 K/s
200
106
A
B CD E FG
A) Type of component
B) Manufacturing Plant
C) SEL - Selection Code (Bin):
e.g.: Q2 = Code for Luminous Intensity Group
D) Date Code year/week
E) Day Code (e.g. 2: Tuesday)
F) Batch No.
G) Total quantity
H) Company Code
250
VISHAY
H
37
19988
Figure 14.Double wave soldering of opto devices (all packages)
www.vishay.com
6
Document Number 81350
Rev. 1.0, 11-Aug-06
VLMK33..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.