VISHAY VLMK31 Technical data

19225

High Intensity SMD LED

FEATURES

• SMD LED with exceptional brightness

• Luminous intensity categorized

• Compatible with automatic placement
equipment

• EIA and ICE standard package

• Compatible with IR Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C

• Available in 8 mm tape

• Low profile package

• Non-diffused lens: excellent for coupling to light
pipes and backlighting

• Low power consumption

• Luminous intensity ratio in one packaging unit
I

Vmax/IVmin

• Lead (Pb)-free device-RoHS compliant

• Preconditioning acc. to JEDEC Level 2a

• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B

≤ 1.6

VLMK31..

Vishay Semiconductors

e3

DESCRIPTION

This device has been designed to meet the increasing
demand for AlInGaP technology.

The package of the VLMK31.. is the PLCC-2.
It consists of a lead frame which is embedded in a

white thermoplast. The reflector inside this package is
filled up with clear epoxy.

APPLICATIONS

• Automotive: Backlighting in dashboards and
switches

• Telecommunication: Indicator and backlighting in
telephone and fax

• Indicator and backlight for audio and video equip­ment

• Indicator and backlight in office equipment

• Flat backlight for LCDs, switches and symbols

• General use

PARTS TABLE

PART COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHNOLOGY

VLMK31P2S1-GS08 Red, I

VLMK31P2S1-GS18 Red, I

VLMK31Q1R2-GS08 Red, I

VLMK31Q1R2-GS18 Red, I

VLMK31R1S1-GS08 Red, I

VLMK31R1S1-GS18 Red, I

= (56 to 224) mcd 60° AllnGaP on GaAs

V

= (56 to 224) mcd 60° AllnGaP on GaAs

V

= (71 to 180) mcd 60° AllnGaP on GaAs

V

= (71 to 180) mcd 60° AllnGaP on GaAs

V

= (112 to 224) mcd 60° AllnGaP on GaAs

V

= (112 to 224) mcd 60° AllnGaP on GaAs

V

Document Number 81329
Rev. 1.0, 03-May-06

www.vishay.com

1

VLMK31..

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS1), VLMK31..

PARAMETER TEST CONDITION SYMBOL VAL UE UNIT

Reverse voltage

DC Forward current T

Surge forward current t

2)

≤ 85 °C I

amb

≤ 10 µs I

p

Power dissipation P

Junction temperature T

Operating temperature range T

Storage temperature range T

Thermal resistance junction/
ambient

mounted on PC board

(pad size > 16 mm

2

)

Note:

1)

T

= 25 °C unless otherwise specified

amb

2)

Driving LED in reverse direction is suitable for short term application

OPTICAL AND ELECTRICAL CHARACTERISTICS1), VLMK31.., RED

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

Luminous intensity

2)

Dominant wavelength I

Peak wavelength I

Angle of half intensity I

Forward voltage I

Reverse voltage I

Junction capacitance V

Note:

1)

T

= 25 °C unless otherwise specified

amb

2)

in one Packing Unit I

Vmax/IVmin

≤ 2.0

IF = 20 mA VLMK31P2S1 I

VLMK31Q1R2 I

VLMK31R1S1 I

= 20 mA λ

F

= 20 mA λ

F

= 20 mA ϕ ± 60 deg

F

= 20 mA V

F

= 10 µA V

R

= 0, f = 1 MHz C

R

R

V

F

FSM

amb

stg

thJA

R

5V

30 mA

0.1 A

V

j

80 mW

125 °C

- 40 to + 100 °C

- 40 to + 100 °C

400 K/W

V

V

V

d

p

F

R

j

56 224 mcd

71 180 mcd

112 224 mcd

630 nm

643 nm

1.9 2.6 V

5V

15 pF

LUMINOUS INTENSITY CLASSIFICATION

GROUP LIGHT INTENSITY [MCD]

STANDARD OPTIONAL MIN MAX

P 1 45 56

2 56 71

Q 1 71 90

2 90 112

R 1 112 140

2 140 180

S 1 180 224

2 224 280

Note:

Luminous intensity is tested at a current pulse duration of 25 ms
and an accuracy of ± 11 %.

The above type numbers represent the order groups which in­clude only a few brightness groups. Only one group will be
shipped on each reel (there will be no mixing of two groups on
each reel).

In order to ensure availability, single brightness groups will not be
orderable.

www.vishay.com
2

In a similar manner for colors where wavelength groups are mea­sured and binned, single wavelength groups will be shipped on
any one reel.

In order to ensure availability, single wavelength groups will not
be orderable.

CROSSING TABLE

VISHAY OSRAM

VLMK31P2S1 LST676-P2S1

VLMK31Q1R2 LST676-Q1R2
VLMK31R1S1 LST676-R1S1

Document Number 81329

Rev. 1.0, 03-May-06

TYPICAL CHARACTERISTICS

T

= 25 °C unless otherwise specified

amb

VLMK31..

Vishay Semiconductors

40

35

30

25

20

15

10

F

I - Forward Current (mA)

5

0

0 1020304050607080 90 100

16615

T

- Ambient Temperature (°C)

amb

Figure 1. Forward Current vs. Ambient Temperature

1000.00

100.00

tp/T = 0.01

0.02

0.05

0.1

0.2

0.5

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

rel

I - Relative Intensity

0.2

0.1

0.0

600 610 620 630 640 650 660 670 680 690 700

96 12075

λ - Wavelength (nm)

Figure 4. Relative Intensity vs. Wavelength

100

10

FM

I - Forward Current (mA)

10.00

0.01 0.10 1.00 10.00 100.00

16622

1

tp - Pulse Length (ms)

Figure 2. Forward Current vs. Pulse Length

0°

1.0

0.9

0.8

- RelativeLuminous Intensity

0.7

v rel

I

95 10319

0.4 0.2 0 0.2 0.4

0.6

10° 20°

30°

40°

50°

60°

70°

80°

0.6

Figure 3. Rel. Luminous Intensity vs. Angular Displacement

F

I - Forward Current (mA)

1

1.0 1.5 2.0 2.5 3.0

95 10878

VF- Forward Voltage (V)

Figure 5. Forward Current vs. Forward Voltage

10.00

Red

1.00

0.10

Vrel

I - Relative Luminous Intensity

0.01

1.00 10.00 100.00

19113

IF - Forward Current (mA)

Figure 6. Relative Luminous Intensity vs. Forward Current

Document Number 81329
Rev. 1.0, 03-May-06

www.vishay.com

3