19225
High Intensity SMD LED
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
• EIA and ICE standard package
• Compatible with IR Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
• Lead (Pb)-free device-RoHS compliant
• Preconditioning acc. to JEDEC Level 2a
• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B
≤ 1.6
VLMK31..
Vishay Semiconductors
e3
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
The package of the VLMK31.. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
APPLICATIONS
• Automotive: Backlighting in dashboards and
switches
• Telecommunication: Indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHNOLOGY
VLMK31P2S1-GS08 Red, I
VLMK31P2S1-GS18 Red, I
VLMK31Q1R2-GS08 Red, I
VLMK31Q1R2-GS18 Red, I
VLMK31R1S1-GS08 Red, I
VLMK31R1S1-GS18 Red, I
= (56 to 224) mcd 60° AllnGaP on GaAs
V
= (56 to 224) mcd 60° AllnGaP on GaAs
V
= (71 to 180) mcd 60° AllnGaP on GaAs
V
= (71 to 180) mcd 60° AllnGaP on GaAs
V
= (112 to 224) mcd 60° AllnGaP on GaAs
V
= (112 to 224) mcd 60° AllnGaP on GaAs
V
Document Number 81329
Rev. 1.0, 03-May-06
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1
VLMK31..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1), VLMK31..
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
Reverse voltage
DC Forward current T
Surge forward current t
2)
≤ 85 °C I
amb
≤ 10 µs I
p
Power dissipation P
Junction temperature T
Operating temperature range T
Storage temperature range T
Thermal resistance junction/
ambient
mounted on PC board
(pad size > 16 mm
2
)
Note:
1)
T
= 25 °C unless otherwise specified
amb
2)
Driving LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS1), VLMK31.., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
2)
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
Note:
1)
T
= 25 °C unless otherwise specified
amb
2)
in one Packing Unit I
Vmax/IVmin
≤ 2.0
IF = 20 mA VLMK31P2S1 I
VLMK31Q1R2 I
VLMK31R1S1 I
= 20 mA λ
F
= 20 mA λ
F
= 20 mA ϕ ± 60 deg
F
= 20 mA V
F
= 10 µA V
R
= 0, f = 1 MHz C
R
R
V
F
FSM
amb
stg
thJA
R
5V
30 mA
0.1 A
V
j
80 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
400 K/W
V
V
V
d
p
F
R
j
56 224 mcd
71 180 mcd
112 224 mcd
630 nm
643 nm
1.9 2.6 V
5V
15 pF
LUMINOUS INTENSITY CLASSIFICATION
GROUP LIGHT INTENSITY [MCD]
STANDARD OPTIONAL MIN MAX
P 1 45 56
2 56 71
Q 1 71 90
2 90 112
R 1 112 140
2 140 180
S 1 180 224
2 224 280
Note:
Luminous intensity is tested at a current pulse duration of 25 ms
and an accuracy of ± 11 %.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be
shipped on each reel (there will be no mixing of two groups on
each reel).
In order to ensure availability, single brightness groups will not be
orderable.
www.vishay.com
2
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not
be orderable.
CROSSING TABLE
VISHAY OSRAM
VLMK31P2S1 LST676-P2S1
VLMK31Q1R2 LST676-Q1R2
VLMK31R1S1 LST676-R1S1
Document Number 81329
Rev. 1.0, 03-May-06
TYPICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified
amb
VLMK31..
Vishay Semiconductors
40
35
30
25
20
15
10
F
I - Forward Current (mA)
5
0
0 1020304050607080 90 100
16615
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature
1000.00
100.00
tp/T = 0.01
0.02
0.05
0.1
0.2
0.5
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
rel
I - Relative Intensity
0.2
0.1
0.0
600 610 620 630 640 650 660 670 680 690 700
96 12075
λ - Wavelength (nm)
Figure 4. Relative Intensity vs. Wavelength
100
10
FM
I - Forward Current (mA)
10.00
0.01 0.10 1.00 10.00 100.00
16622
1
tp - Pulse Length (ms)
Figure 2. Forward Current vs. Pulse Length
0°
1.0
0.9
0.8
- RelativeLuminous Intensity
0.7
v rel
I
95 10319
0.4 0.2 0 0.2 0.4
0.6
10° 20°
30°
40°
50°
60°
70°
80°
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
F
I - Forward Current (mA)
1
1.0 1.5 2.0 2.5 3.0
95 10878
VF- Forward Voltage (V)
Figure 5. Forward Current vs. Forward Voltage
10.00
Red
1.00
0.10
Vrel
I - Relative Luminous Intensity
0.01
1.00 10.00 100.00
19113
IF - Forward Current (mA)
Figure 6. Relative Luminous Intensity vs. Forward Current
Document Number 81329
Rev. 1.0, 03-May-06
www.vishay.com
3
VLMK31..
Vishay Semiconductors
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Vrel
0.2
I – Relative Luminous Intensity
0.0
0 1020304050607080 90 100
16618
T
– Ambient Temperature (°C)
amb
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
PACKAGE DIMENSIONS IN MM
3. 5 ± 0.2
0.10
1.75 ±
Pin identification
0.9
2.10
2.05
IF= 20 mA
2.00
1.95
1.90
1.85
1.80
1.75
1.70
Frel
V - Relative Forward Voltage
1.65
1.60
0 1020304050607080 90 100
16617
T
amb
Red
- Ambient Temperature (°C)
Figure 8. Forward Voltage vs. Ambient Temperature
technical drawings
according to DIN
specifications
Mounting Pad Layout
1.2
area covered with
solder resist
CA
+ 0.15
2.8
Ø
2.4
+ 0.15
3
Drawing-No. : 6.541-5025.01-4
Issue: 8; 22.11.05
95 11314-1
2.2
2.6 (2.8)
4
1.6 (1.9)
Dimensions: IR Reflow and Vaporphase
(Wave Soldering)
4
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4
Document Number 81329
Rev. 1.0, 03-May-06
METHOD OF TAPING/POLARITY AND TAPE AND REEL
VLMK31..
Vishay Semiconductors
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertation. The blister tape is a plastic strip with
impressed component cavaties, covered by a top
tape.
Adhesive Tape
Blister Tape
Component Cavity
94 8670
TAPING OF VLM.3..
8.3
7.7
2.2
2.0
0.25
94 8668
4.0
3.6
Anode
Cathode
1.6
1.4
4.1
3.9
3.5
3.1
2.05
1.95
4.1
3.9
3.6
3.4
1.85
1.65
5.75
5.25
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
10.0
13.00
12.75
14.4 max.
9.0
94 8665
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
180
178
120°
4.5
3.5
2.5
1.5
Figure 10. Reel dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERED
10.4
13.00
12.75
14.4 max.
8.4
62.5
60.0
18857
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
120°
4.5
3.5
2.5
1.5
321
329
Figure 11. Reel dimensions - GS18
Figure 9. Tape dimensions in mm for PLCC-2
Document Number 81329
Rev. 1.0, 03-May-06
www.vishay.com
5
VLMK31..
255
240 °C
217 °C
Vishay Semiconductors
SOLDERING PROFILE BARCODE-PRODUCT-LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead free soldering
Preconditioning acc. to JEDEC Level 2a
300
max. 30 s
max. 260 °C
245 °C
106
A
250
200
150
Temperature (°C)
100
255 °C
max. 120 s
max. 100 s
VISHAY
H
37
max. Ramp Up 3 °C/s
50
0
0 50 100 150 200 250 300
19885
max. Ramp Down 6 °C/s
Time (s)
max. 2 cycles allowed
Figure 12. Vishay Leadfree Reflow Soldering Profile
(acc. to J-STD-020C)
200
948626-1
250
300
250
200
150
100
Temperature (°C)
50
0
TTW Soldering
235 °C...260 °C
first wave
ca. 200 K/s
100 °C...130 °C
0
(acc. to CECC00802)
5 s
2 K/s
forced cooling
50
100
second
wave
ca. 2 K/s
Time (s)
Lead Temperature
full line : typical
dotted line: process limits
ca. 5 K/s
150
Figure 13. Double wave soldering of opto devices (all packages)
BC D E F G
20129
A) Type of component
B) Manufacturing plant
C) SEL - Selection Code (Bin):
e. g. : P 2 = Co de fo r L um in ou s I nt en si ty Gr ou p
D) Date Code year/week
E) Day Code (e.g. 3: Wednesday)
F) Batch No.
G) Total quantity
H) Company Code
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6
Document Number 81329
Rev. 1.0, 03-May-06
VLMK31..
Vishay Semiconductors
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during transportation and storage.
Aluminium bag
Label
Reel
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping purposes.
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminium bag has been opened to prevent moisture absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 hours under these conditions
moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will
recover to the former condition by drying under the
following condition:
192 hours at 40 °C + 5 °C/ - 0 °C and < 5 % RH
(dry air/nitrogen) or
96 hours at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 hours at 100 °C + 5 °C not suitable for reel or
tubes.
An EIA JEDEC Standard JESD22-A112 Level 2a
label is included on all dry bags.
CAUTION
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within
b) Stored at <1
3. Devices require baking before mounting if:
a) Humidity Indicator Card is >10% when read at 23°C +
b) 2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours
96 hours
24 hours
Bag Seal Date: ______________________________
(If blank, see bar code label)
This bag contains
MOISTURE –SENSITIVE DEVICES
672 hours
0% RH.
at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
at 60±5
at 100±5°C Not suitable for
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
at factory condition of <
o
Cand <5%RH For
all
device containers or
L E V E L
30°C/60%RH or
5°C or
reels or tubes
2a
or
19786
Example of JESD22-A112 Level 2a label
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive
Devices warning labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR-CODE LABELS
The Vishay Semiconductors standard bar-code
labels are printed at final packing areas. The labels
are on each packing unit and contain Vishay Semiconductors specific data.
Document Number 81329
Rev. 1.0, 03-May-06
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7
VLMK31..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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8
Document Number 81329
Rev. 1.0, 03-May-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
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