19225
High Intensity SMD LED
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
equipment
• EIA and ICE standard package
• Compatible with IR Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
• Lead (Pb)-free device-RoHS compliant
• Preconditioning: acc. to JEDEC Level 2a
• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B
≤ 1.6
VLME31..
Vishay Semiconductors
e3
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
The package of the VLME31-series is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
APPLICATIONS
• Automotive: Backlighting in dashboards and
switches
• Telecommunication: Indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY ANGLE OF HALF INTENSITY (± ϕ) TECHNOL OGY
VLME31Q2T1-GS08
VLME31Q2T1-GS18
VLME31R1S2-GS08
VLME31R1S2-GS18
VLME31S1T1-GS08
VLME31S1T1-GS18
Ye l l o w , I
Ye l l o w , I
Ye l l o w , I
Ye l l o w , I
Ye l l o w , I
Ye l l o w , I
= (90 to 355) mcd
V
= (90 to 355) mcd
V
= (112 to 280) mcd
V
= (112 to 280) mcd
V
= (180 to 355) mcd
V
= (180 to 355) mcd
V
60° AllnGaP on GaAs
60° AllnGaP on GaAs
60° AllnGaP on GaAs
60° AllnGaP on GaAs
60° AllnGaP on GaAs
60° AllnGaP on GaAs
Document Number 81324
Rev. 1.0, 09-May-06
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VLME31..
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1), VLME31..
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
Reverse voltage
DC Forward current
Surge forward current
2)
≤ 85 °C I
T
amb
≤ 10 µs I
t
p
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
Driving LED in reverse direction is suitable for short term application
mounted on PC board
(pad size > 16 mm
2
)
OPTICAL AND ELECTRICAL CHARACTERISTICS1), YELLOW, VLME31..
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
2)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
in one Packing Unit I
Vmax/IVmin
≤ 1.6
IF = 20 mA
VLME31Q2T1
VLME31R1S2
VLME31S1T1
= 20 mA λ
I
F
I
= 20 mA λ
F
= 20 mA
I
F
I
= 20 mA V
F
= 10 µA V
I
R
= 0, f = 1 MHz C
V
R
T
R
V
FSM
P
T
amb
T
thJA
stg
R
F
5V
30 mA
0.1 A
V
j
80 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
400 K/W
I
V
I
V
I
V
d
p
90 355
112 280
180 355
581 588 594 nm
590 nm
ϕ ± 60 deg
F
R
j
5V
2.0 2.6 V
15 pF
mcd
LUMINOUS INTENSITY CLASSIFICATION
GROUP LIGHT INTENSITY [MCD]
STANDARD OPTIONAL MIN MAX
Q
R
S
T
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any
one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
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1 71 90
2 90 112
1 112 140
2 140 180
1 180 224
2 224 280
1 280 355
2 355 450
CROSSING TABLE
VISHAY OSRAM
VLME31Q2T1 LY T 6 7 6 - Q 2 T 1
VLME31R1S2 LY T 6 7 6 - R 1 S 2
VLME31S1T1 LYT676-S1T1
Document Number 81324
Rev. 1.0, 09-May-06
COLOR CLASSIFICATION
GROUP YELLOW
DOM. WAVELENGTH [NM]
MIN. MAX.
1 581 584
2 583 586
3 585 588
4 587 590
5 589 592
6 591 594
Note:
Wavelengths are tested at a current pulse duration of 25 ms and an
accuracy of ± 1 nm.
TYPICAL CHARACTERISTICS
T
= 25 °C unless otherwise specified
amb
VLME31..
Vishay Semiconductors
40
35
30
25
20
15
10
F
I - Forward Current (mA)
5
0
0 1020304050607080 90 100
16615
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature
1000.00
tp/T = 0.01
0.02
0.05
100.00
FM
I – Forward Current (mA)
16621
0.2
0.5
10.00
0.01 0.10 1.00 10.00 100.00
t
– Pulse Length (ms)
p
0.1
1
0°
1.0
0.9
0.8
- RelativeLuminous Intensity
0.7
v rel
I
95 10319
0.4 0.2 0 0.2 0.4
0.6
10° 20°
30°
40°
50°
60°
70°
80°
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V rel
I - RelativeLuminous Intensity
0.1
0.0
550 560 570 580 590 600610 620 630 640 650
95 10881
λ -Wavelength (nm)
IF=20mA
Figure 2. Forward Current vs. Pulse Length
Document Number 81324
Rev. 1.0, 09-May-06
Figure 4. Relative Intensity vs. Wavelength
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