Power SMD LED PLCC-2
19225
DESCRIPTION
The VLM.33.. series is an advanced modification of the
Vishay VLM.33.. series. It is designed to incorporate
larger chips, therefore, capable of withstanding a
50 mA drive current.
The package of the VLM.33.. is the PLCC-2.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
VLM.33..
Vishay Semiconductors
FEATURES
• Utilizing (AS) AlInGaP technology
• Available in 8 mm tape
• Luminous intensity and color categorized
per packing unit
• Luminous intensity ratio per packing unit
I
Vmax/IVmin
≤ 1.6
• Thermal resistance R = 400 K/W
• ESD-withstand voltage:
up to 2 kV according to JESD22-A114-B
• Lead (Pb)-free device
• Preconditioning: acc. to JEDEC Level 2a
• Compatible with Reflow, vapor phase and wave
solder processes according to CECC 00802 and
J-STD-020C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Automotive qualified AEC-Q101
e3
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Product series: SMD Power
• Package: PLCC-2
• Angle of half intensity: ± 60°
APPLICATIONS
• Traffic signals and signs
• Interior and exterior lighting
• Dashboard illumination
• Indicator and backlighting purposes for audio,
video, LCDs switches, symbols, illuminated
advertising etc
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
VLMR33T1U2-GS08
VLMR33T1U2-GS18
VLMR33R2U2-GS08
VLMR33R2U2-GS18
VLMS33S1T2-GS08
VLMS33S1T2-GS18
VLMS33S1U1-GS08
VLMS33S1U1-GS18
VLMO33S1T2-GS08
VLMO33S1T2-GS18
VLMO33T1U2-GS08
VLMO33T1U2-GS18
VLMO33R2U2-GS08
Amber, I
Amber, I
Amber, I
Amber, I
Super red, I
Super red, I
Super red, I
Super red, I
Soft orange, I
Soft orange, I
Soft orange, I
Soft orange, I
Soft orange, I
= (280 to 710) mcd
V
= (280 to 710) mcd
V
= (140 to 710) mcd
V
= (140 to 710) mcd
V
= (180 to 450) mcd
V
= (180 to 450) mcd
V
= (180 to 560) mcd
V
= (180 to 560) mcd
V
= (180 to 450) mcd
V
= (180 to 450) mcd
V
= (280 to 710) mcd
V
= (280 to 710) mcd
V
= (140 to 710) mcd
V
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 81336
Rev. 1.0, 04-May-07
www.vishay.com
1
VLM.33..
Vishay Semiconductors
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECH NOL OGY
VLMO33R2U2-GS18
VLMY33T1U2-GS08
VLMY33T1U2-GS18
VLMY33R2U2-GS08
VLMY33R2U2-GS18
Soft orange, I
Ye l l o w, I
Ye l l o w, I
Ye l l o w, I
Ye l l o w, I
ABSOLUTE MAXIMUM RATINGS1) VLM.33..
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage
DC Forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance junction/
ambient
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
Driving the LED in reverse direction is suitable for a short term application
2)
≤ 73 °C (400 K/W) I
T
amb
mounted on PC board
(pad size > 16 mm
= (140 to 710) mcd
V
= (280 to 710) mcd
V
= (280 to 710) mcd
V
= (140 to 710) mcd
V
= (140 to 710) mcd
V
2
)
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
AlInGaP on GaAs
V
R
F
P
V
T
j
T
amb
T
stg
R
thJA
5V
50 mA
130 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
400 K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMR33.., AMBER
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
φ
I
V
I
V
V/IV
d
p
280 710 mcd
140 710 mcd
3mlm/mcd
611 617 622 nm
624 nm
Δλ 18 nm
ϕ ± 60 deg
F
R
1.7 2.0 2.5 V
0.01 10 µA
Luminous intensity
Luminous flux/Luminous
intensity
Dominant wavelength
Peak wavelength
Spectral bandwidth
at 50 % I
rel max
Angle of half intensity
Forward voltage
Reverse current
Note:
1)
T
= 25 °C, unless otherwise specified
amb
= 30 mA
I
F
I
= 30 mA λ
F
I
= 30 mA λ
F
VLMR33T1U2
VLMR33R2U2
IF = 30 mA
= 30 mA
I
F
I
= 30 mA V
F
= 5 V I
V
R
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2
Document Number 81336
Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMS33.., SUPER RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
= 30 mA
I
F
VLMS33S1T2
VLMS33S1U1
Luminous flux/Luminous
intensity
I
Dominant wavelength
Peak wavelength
Spectral bandwidth
at 50 % I
rel max
Angle of half intensity
Forward voltage
Reverse current
Note:
1)
T
= 25 °C, unless otherwise specified
amb
= 30 mA λ
F
I
= 30 mA λ
F
IF = 30 mA
= 30 mA
I
F
I
= 30 mA V
F
= 5 V I
V
R
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMO33.., SOFT ORANGE
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
VLMO33S1T2
= 30 mA
Luminous intensity
Luminous flux/Luminous
intensity
Dominant wavelength
Peak wavelength
Spectral bandwidth
at 50 % I
rel max
Angle of half intensity
Forward voltage
Reverse current
Note:
1)
T
= 25 °C, unless otherwise specified
amb
I
F
= 30 mA λ
I
F
= 30 mA λ
I
F
IF = 30 mA
= 30 mA
I
F
I
= 30 mA V
F
= 5 V I
V
R
VLMO33T1U2
VLMO33R2U2
I
V
I
V
φ
V/IV
d
p
180 450 mcd
180 560 mcd
3mlm/mcd
626 630 638 nm
641 nm
Δλ 17 nm
ϕ ± 60 deg
1.7 2.0 2.5 V
0.01 10 µA
180 450 mcd
280 710 mcd
140 710 mcd
3mlm/mcd
600 605 611 nm
611 nm
φ
F
R
I
V
I
V
I
V
V/IV
d
p
Δλ 17 nm
ϕ ± 60 deg
F
R
1.7 2.0 2.5 V
0.01 10 µA
OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMY33.., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Luminous flux/Luminous intensity
Dominant wavelength
Peak wavelength
Spectral bandwidth
at 50 % I
rel max
Angle of half intensity
Forward voltage
Reverse current
Note:
1)
T
= 25 °C, unless otherwise specified
amb
Document Number 81336
Rev. 1.0, 04-May-07
= 30 mA
I
F
= 30 mA λ
I
F
= 30 mA λ
I
F
VLMY33T1U2
VLMY33R2U2
IF = 30 mA
= 30 mA
I
F
I
= 30 mA V
F
= 5 V I
V
R
I
V
I
V
φ
V/IV
d
p
280 710 mcd
140 710 mcd
3mlm/mcd
583 588 594 nm
590 nm
Δλ 18 nm
ϕ ± 60 deg
F
R
1.7 2.0 2.5 V
0.01 10 µA
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3
VLM.33..
Vishay Semiconductors
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
GROUP
1 611 618 598 601 581 584
2 614 622 600 603 583 586
3 602 605 585 588
4 604 607 587 590
5 606 609 589 592
6 608 611 591 594
Note:
Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
AMBER SOFT ORANGE YEL LO W
MIN MAX MIN MAX MIN MAX
LUMINOUS INTENSITY CLASSIFICATION
GROUP LUMINOUS INTENSITY (MCD)
STANDARD OPTIONAL MIN MAX
P
Q
R
S
T
U
Note:
Luminous intensity is tested at a current pulse duration of 25 ms and
an accuracy of ± 11 %.
The above type Numbers represent the order groups which include
only a few brightness groups. Only one group will be shipped on
each reel (there will be no mixing of two groups on each reel).
In order to ensure availability, single brightness groups will not be
orderable.
In a similar manner for colors where wavelength groups are
measured and binned, single wavelength groups will be shipped on
any one reel.
In order to ensure availability, single wavelength groups will not be
orderable.
1 45 56
2 56 71
1 71 90
2 90 112
1 112 140
2 140 180
1 180 224
2 224 280
1 280 355
2 355 450
1 450 560
2 560 710
CROSSING TABLE
VISHAY OSRAM
VLMS33S1T2 LST67B-S1T2
VLMS33S1U1 LST67B-T1U1
www.vishay.com
4
Document Number 81336
Rev. 1.0, 04-May-07
TYPICAL CHARACTERISTICS
super red
T
= 25 °C, unless otherwise specified
amb
VLM.33..
Vishay Semiconductors
100
90
80
70
R
60
= 400 K/W
thJA
50
40
30
20
- Forward Current (mA)
F
I
10
0
10 25 50 75 100 125
T
16784
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature
0.12
0.10
0.08
0.06
0.04
- Forward Current (A)
F
0.02
I
0.00
10-510-410-310-210-110010110
17044
tP/T = 0.005
0.05
0.5
tP - Pulse Length (s)
2
Figure 2. Forward Current vs. Pulse Length
100
90
80
70
60
yellow
soft orange
amber
super red
50
40
30
- Forward Current (mA)
20
F
I
10
0
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
20144
V
- Forward Voltage (V)
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
- Relative Luminous Intensity
0.2
V rel
I
0.1
0.0
20196
amber
570 580 590 600 610 620 630 640 650 660 670
λ - Wavelength (nm)
Figure 5. Relative Intensity vs. Wavelength
0°
10° 20°
1.0
0.9
0.8
- Relative Luminous Intensity
0.7
V rel
I
95 10319
0.4 0.2 0 0.2 0.4
0.6
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Document Number 81336
Rev. 1.0, 04-May-07
30°
40°
50°
60°
70°
80°
10
amber
yellow
soft orange
1
0.1
- Relative Luminous Intensity
V rel
I
0.01
1 10 100
20143
IF - Forward Current (mA)
Figure 6. Relative Luminous Intensity vs. Forward Current
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5
VLM.33..
Vishay Semiconductors
2.5
amber
2.0
1.5
1.0
0.5
-Relative Luminous Intensity
V rel
I
0.0
- 50 - 25 0 25 50 75 100
20197
T
- Ambient Temperature (°C)
amb
Figure 7. Relative Luminous Intensity vs. Amb. Temperature
6
amber
4
2
0
- 2
- 4
- Change of Dom. Wavelength (nm)
d
- 6
- 50 - 25 0 25 50 75 100
- Ambient Temperature (°C)
T
20199
amb
Figure 8. Change of Dominant Wavelength vs.
Ambient Temperature
1.2
1.1
super red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
- Relative Luminous Intensity
0.2
V rel
I
0.1
0.0
600 610620 630 640 650 660 670 680 690 700
20198
λ - Wavelength (nm)
Figure 10. Relative Intensity vs. Wavelength
2.5
super red
2.0
1.5
1.0
0.5
- Relative Luminous Intensity
V rel
I
0.0
- 50 - 25 0 25 50 75 100
20201
- Ambient Temperature (°C)
T
amb
Figure 11. Relative Luminous Intensity vs. Amb. Temperature
250
200
150
50 mA
amber
100
30 mA
50
0
10 mA
- 50
- 100
- Change of Forward Voltage (mV)
- 150
F
V
- 200
- 50 - 25 0 25 50 75 100
20200
T
- Ambient Temperature (°C)
amb
Figure 9. Change of Forward Voltage vs. Ambient Temperature
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6
1.5
super red
1.0
0.5
0.0
- 0.5
- 1.0
- Change of Dom. Wavelength (nm)Δλ
d
- 1.5
10 20 30 40 50 60 70 80 90 100
20202
IF - Forward Current (mA)
Figure 12. Change of Dominant Wavelength vs. Forward Current
Document Number 81336
Rev. 1.0, 04-May-07
VLM.33..
am b
C
C
Vishay Semiconductors
3
super red
2
1
0
- 1
- 2
- 3
- 4
- Change of Dom. Wavelength (nm)Δλ
d
- 5
- 50 - 25 0 25 50 75 100
T
- Ambient Temperature (°C)
20203
amb
Figure 13. Change of Dominant Wavelength vs.
Ambient Temperature
250
200
150
100
50
0
10 mA
30 mA
red
50 mA
- 50
- 100
- 150
- Change of Forward Voltage (mV)
F
V
- 200
- 50 - 25 0 25 50 75 100
T
- Ambient Temperature (°C)
17039
amb
Figure 14. Change of Forward Voltage vs. Ambient Temperature
2.5
soft orange
2.0
1.5
1.0
0.5
- Relative Luminous Intensity
V rel
I
0.0
- 50 - 25 0 25 50 75 100
17021
- Ambient Temperature (°C)
T
amb
Figure 16. Relative Luminous Intensity vs. Amb. Temperature
6
soft orange
4
2
0
- 2
hange of Dom. Wavelength (nm)
- 4
-
d
- 6
- 50 - 25 0 25 50 75 100
17022
- Ambient Temperature (°C)
T
Figure 17. Change of Dominant Wavelength vs.
Ambient Temperature
1.2
1.1
1.0
soft orange
0.9
0.
8
0.7
0.6
0.5
0.4
0.3
- Relative Luminous Itensity
0.2
V rel
I
0.1
0.0
560 570 580 590 600 610 620 630 640 650 660
16314
Figure 15. Relative Intensity vs. Wavelength
Document Number 81336
λ - Wavelength (nm)
Figure 18. Change of Forward Voltage vs. Ambient Temperature
Rev. 1.0, 04-May-07
250
200
150
100
50
0
50 mA
30 mA
soft orange
10 mA
- 50
- 100
hange of Forward Voltage (mV)
- 150
F
V -
- 200
- 50 - 25 0 25 50 75 100
17020
T
- Ambient Temperature (°C)
amb
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7
VLM.33..
1.2
C
250
Vishay Semiconductors
1.1
yellow
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
- Relative Luminous Intensity
V rel
0.1
I
0.0
540 550 560 570 580 590 600 610 620 630 640
16008
λ - Wavelength (nm)
Figure 19. Relative Intensity vs. Wavelength
2.5
yellow
2.0
1.5
1.0
0.5
- Relative Luminous Intensity
V rel
I
0.0
- 50 - 25 0 25 50 75 100
- Ambient Temperature (°C)
17016
T
amb
Figure 20. Relative Luminous Intensity vs. Amb. Temperature
6
yellow
4
2
0
- 2
hange of Dom. Wavelength (nm)
- 4
-
d
- 6
- 50 - 25 0 25 50 75 100
- Ambient Temperature (°C)
T
17017
amb
Figure 21. Change of Dominant Wavelength vs.
Ambient Temperature
30 mA
200
150
50 mA
yellow
100
50
10 mA
0
- 50
- 100
- Change of Forward Voltage (mV)
- 150
F
V
- 200
- 50 - 25 0 25 50 75 100
17015
- Ambient Temperature (°C)
T
amb
Figure 22. Change of Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
Mounting Pad Layout
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2.6 (2.8)
1.6 (1.9)
20541_1
8
1.2
4
area covered with
solder resist
4
Document Number 81336
Rev. 1.0, 04-May-07
METHOD OF TAPING/POLARITY AND TAPE AND REEL
VLM.33..
Vishay Semiconductors
SMD LED (VLM3 - SERIES)
Vishay’s LEDs in SMD packages are available in an
antistatic 8 mm blister tape (in accordance with
DIN IEC 40 (CO) 564) for automatic component
insertion. The blister tape is a plastic strip with
impressed component cavities, covered by a top tape.
AdhesiveTape
Blister Tape
Component Cavity
94 8670
TAPING OF VLM.3..
3.5
3.1
5.75
5.25
3.6
3.4
1.85
1.6
1.4
4.1
3.9
2.05
1.95
4.1
3.9
1.65
Figure 23. Tape dimensions in mm for PLCC-2
2.2
2.0
4.0
8.3
7.7
3.6
0.25
94 8668
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS08
(= 1500 PCS.)
10.0
13.00
12.75
14.4 max.
9.0
94 8665
63.5
60.5
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
180
178
120°
4.5
3.5
2.5
1.5
Figure 24. Reel dimensions - GS08
REEL PACKAGE DIMENSION IN MM FOR
SMD LEDS, TAPE OPTION GS18
(= 8000 PCS.) PREFERRED
10.4
13.00
12.75
14.4 max.
8.4
62.5
60.0
18857
Identification
Label:
Vishay
Type
Group
Tape Code
Production
Code
Quantity
120°
4.5
3.5
2.5
1.5
321
329
Figure 25. Reel dimensions - GS18
Document Number 81336
Rev. 1.0, 04-May-07
www.vishay.com
9
VLM.33..
Vishay Semiconductors
SOLDERING PROFILE BARCODE-PRODUCT-LABEL
EXAMPLE:
IR Reflow Soldering Profile for lead (Pb)-free soldering
300
255 °C
250
240 °C
217 °C
200
150
Temperature (°C)
100
50
0
0 50 100 150 200 250 300
19885
Figure 26. Vishay Lead (Pb)-free Reflow Soldering Profile
TTW Soldering
300
250
235 °C...260 °C
200
ca. 200 K/s
150
100 °C...130 °C
100
Temperature (°C)
50
0
0
Preconditioning acc. to JEDEC Level 2a
max. 120 s
max. Ramp Up 3 °C/s
(acc. to J-STD-020C)
(acc. to CECC00802)
5 s
first wave
2 K/s
forced cooling
50
100
max. 100 s
max. Ramp Down 6 °C/s
Time (s)
second
wave
dotted line: process limits
ca. 2 K/s
150
Time (s)
max. 260 °C
245 °C
max. 30 s
max. 2 cycles allowed
948626-1
Lead Temperature
full line: typical
ca. 5 K/s
200
106
A
BC D E F G
A) Type of component
B) Manufacturing Plant
C) SEL - Selection Code (Bin):
e.g.: R2 = Code for Luminous Intensity Group
3 = Code for Color Group
D Date Code year/week
E) Day Code (e.g. 1: Monday)
F) Batch No.
G) Total quantity
H) Company Code
250
VISHAY
H
37
20195
Figure 27. Double wave soldering of opto devices (all packages)
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10
Document Number 81336
Rev. 1.0, 04-May-07
VLM.33..
Vishay Semiconductors
DRY PACKING
The reel is packed in an anti-humidity bag to protect
the devices from absorbing moisture during
transportation and storage.
Aluminum bag
Label
Reel
15973
FINAL PACKING
The sealed reel is packed into a cardboard box. A
secondary cardboard box is used for shipping
purposes.
RECOMMENDED METHOD OF STORAGE
Dry box storage is recommended as soon as the
aluminum bag has been opened to prevent moisture
absorption. The following conditions should be
observed, if dry boxes are not available:
• Storage temperature 10 °C to 30 °C
• Storage humidity ≤ 60 % RH max.
After more than 672 hours under these conditions
moisture content will be too high for reflow soldering.
In case of moisture absorption, the devices will recover
to the former condition by drying under the following
condition:
192 hours at 40 °C + 5 °C/- 0 °C and < 5 % RH
(dry air/nitrogen) or
96 hours at 60 °C + 5 °C and < 5 % RH for all device
containers or
24 hours at 100 °C + 5 °C not suitable for reel or tubes.
An EIA JEDEC Standard JESD22-A112 Level 2a label
is included on all dry bags.
CAUTION
1. Shelf life in sealed bag 12 months at <40°C and < 90% relative humidity (RH)
2. After this bag is opened devices that will be subjected to infrared reflow,
vapor-phase reflow, or equivalent processing (peak package body temp.
260°C) must be:
a) Mounted within
b) Stored at <1
3. Devices require baking before mounting if:
a) Humidity Indicator Card is >10% when read at 23°C +
b) 2a or 2b is not met.
4. If baking is required, devices may be baked for:
192 hours
96 hours
24 hours
Bag Seal Date: ______________________________
(If blank, see bar code label)
This bag contains
MOISTURE –SENSITIVE DEVICES
672 hours
0% RH.
at 40°C + 5°C/-0°C and <5%RH (dry air/nitrogen)
at 60±5
at 100±5°C Not suitable for
Note: LEVEL defined by EIA JEDEC Standard JESD22-A113
at factory condition of <
o
Cand <5%RH For
all
device containers or
L E V E L
2a
30°C/60%RH or
5°C or
reels or tubes
or
19786
Example of JESD22-A112 Level 2a label
ESD PRECAUTION
Proper storage and handling procedures should be
followed to prevent ESD damage to the devices
especially when they are removed from the Antistatic
Shielding Bag. Electro-Static Sensitive Devices
warning labels are on the packaging.
VISHAY SEMICONDUCTORS STANDARD
BAR-CODE LABELS
The Vishay Semiconductors standard bar-code labels
are printed at final packing areas. The labels are on
each packing unit and contain Vishay Semiconductors
specific data.
Document Number 81336
Rev. 1.0, 04-May-07
www.vishay.com
11
VLM.33..
Vishay Semiconductors
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
12
Document Number 81336
Rev. 1.0, 04-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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