
Bicolor LED in ∅ 5 mm Untinted Diffused Package
19230
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 5 mm
• Product series: bicolor
• Angle of half intensity: ± 30°
TLUV5300
Vishay Semiconductors
FEATURES
• Even luminance of the emitting surface
• Ideal as flush mounted panel indicators
• For DC and pulse operation
• Color mixing possible due to separate
anode terminals
• Luminous intensity selected into groups
• Categorized for green color
• Wide viewing angle
• Common cathode
• Lead (Pb)-free device
APPLICATIONS
• Indicating and illumination purposes
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PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLUV5300
Green/red, I
> 1 mcd
V
GaAsP on GaP
ABSOLUTE MAXIMUM RATINGS1) TLUV5300
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
Reverse voltage per diode
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Total power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient per diode
Thermal resistance junction/
ambient total
Note:
1)
T
= 25 °C, unless otherwise specified
amb
t
≤ 10 μsI
p
≤ 55 °C P
T
amb
≤ 55 °C P
T
amb
t ≤ 5 s, 2 mm from body T
T
R
R
V
I
FSM
T
amb
T
thJA
thJA
R
F
V
tot
j
stg
sd
6V
30 mA
1A
100 mW
150 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
450 K/W
300 K/W
Document Number 83056
Rev. 1.7, 21-Sep-07
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TLUV5300
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLUV5300, RED
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Per diode
Luminous intensity
2)
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
in one packing unit I
Vmin/IVmax
≤ 0.5
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLUV5300, GREEN
PARAMETER TEST CONDITION SYMBOL MIN TYP. MAX UNIT
Per diode
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
2)
in one packing unit I
2)
Vmin/IVmax
≤ 0.5
IF = 10 mA I
I
= 10 mA λ
F
= 10 mA λ
I
F
= 10 mA
I
F
I
= 20 mA V
F
I
= 10 μAV
R
= 0, f = 1 MHz C
V
R
IF = 10 mA I
= 10 mA λ
I
F
= 10 mA λ
I
F
= 10 mA
I
F
I
= 20 mA V
F
= 10 μAV
I
R
V
= 0, f = 1 MHz C
R
V
d
p
ϕ ± 30 deg
F
R
j
V
d
p
ϕ ±30 deg
F
R
j
12.5 mcd
612 625 nm
630 nm
23V
615 V
50 pF
12.5 mcd
552 575 nm
565 nm
2.4 3 V
615 V
50 pF
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
125
100
75
50
- Power Dissipation (mW)
25
V
P
0
020
95 9983
T
Figure 1. Power Dissipation vs. Ambient Temperature
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2
40
60 80 100
- Ambient Temperature (°C)
amb
60
50
40
30
20
- Forward Current (mA)
F
I
10
0
020406080 100
95 9984
T
- Ambient Temperature (°C)
amb
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Document Number 83056
Rev. 1.7, 21-Sep-07

TLUV5300
Vishay Semiconductors
10000
1000
tp/T = 0.01
0.02
0.05
0.1
0.2
100
0.5
1
- Forward Current (mA)
10
F
I
T
≤ 55 °C
1
0.01 0.1 1 10
95 10085
- Pulse Length (ms)
t
p
amb
100
Figure 3. Forward Current vs. Pulse Length
0°
10° 20°
30°
40°
1.0
0.9
0.8
0.7
Vrel
I - Relative Luminous Intensity
95 10042
0.4 0.2 0 0.2 0.4
0.6
50°
60°
70°
80°
0.6
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
1.6
Red
1.2
0.8
0.4
IF=10mA
v rel
I - RelativeLuminous Intensity
0
20 40 60 800 100
-Ambient Temperature (°C)
95 10087
T
amb
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
2.4
Red
2.0
1.6
1.2
0.
8
0.4
v rel
I - RelativeLuminous Intensity
I
= 10 mA, const.
FAV
0
10 20 50 100 200
95 10088
0.5 0.2 0.1 0.05 0.021
500
I
F
t
(mA)
/T
p
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
1000
red
100
10
1
F
I - Forward Current (mA)
0.1
95 10086
VF- Forward Voltage (V)
Figure 5. Forward Current vs. Forward Voltage
Document Number 83056
Rev. 1.7, 21-Sep-07
tp/T = 0.001
t
=10µs
p
10
Red
1
0.1
v rel
I - RelativeLuminous Intensity
1086420
0.01
95 10089
101
IF- Forward Current (mA)
100
Figure 8. Relative Luminous Intensity vs. Forward Current
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