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VISHAY
Pb
Pb-free
19229
e4
TLUR240.
Vishay Semiconductors
Universal LED, ∅ 1.8 mm Tinted Diffused Miniplast Package
Features
• For DC and pulse operation
• Luminous intensity categorized
• End-to-end stackable in centre-to-centre
spacing of 0.1" (2.54 mm)
• Lead-free device
Applications
General indicating and lighting purposes
Parts Table
Part Color, Luminous Intensity Angle of Half Intensity (±ϕ) Technology
TLUR2400 Red, I
TLUR2401 Red, I
> 15 mcd (typ.) 20 ° GaAsP on GaP
V
= (4 to 32) mcd 20 ° GaAsP on GaP
V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
TLUR240.
Parameter Test condition Symbol Value Unit
Reverse voltage V
DC Forward current I
Surge forward current t
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 3 s, 2 mm from body T
Thermal resistance junction/
ambient
≤ 10 µsI
p
≤ 55 °C P
amb
t ≤ 5 s, 4 mm from body T
R
F
FSM
amb
stg
sd
sd
thJA
R
V
j
6V
20 mA
0.5 A
60 mW
100 °C
- 40 to + 100 °C
- 55 to + 100 °C
260 °C
260 °C
450 K/W
Document Number 83288
Rev. 1.3, 31-Aug-04
www.vishay.com
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TLUR240.
Vishay Semiconductors
Optical and Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Red
TLUR240.
Parameter Test condition Part Symbol Min Ty p. Max Unit
Luminous intensity
1)
Dominant wavelength I
Peak wavelength I
Angle of half intensity I
Forward voltage I
Reverse voltage I
Junction capacitance V
1)
in one Packing Unit I
Vmin/IVmax
IF = 10 mA TLUR2400 I
= 10 mA λ
F
= 10 mA λ
F
= 10 mA ϕ ± 20 deg
F
= 20 mA V
F
= 10 µAV
R
= 0, f = 1 MHz C
R
≤ 0.5
TLUR2401 I
VISHAY
V
V
d
p
F
R
j
415 mcd
432mcd
630 nm
640 nm
23V
615 V
50 pF
Typical Characteristics (T
100
80
60
40
20
V
P –Power Dissipation (mW)
0
0 20406080100
17518
T
– Ambient Temperature ( qC )
amb
= 25 °C unless otherwise specified)
amb
Figure 1. Power Dissipation vs. Ambient Temperature
40
35
30
25
20
15
10
F
I –Forward Current ( mA )
5
0
0 1020304050607080 90100
17517
T
– Ambient Temperature ( qC )
amb
10 20
°
30°
40°
50°
60°
70°
80°
0.6
v rel
I - Relative Luminous Intensity
95 10094
1.0
0.9
0.8
0.7
0 °°
0.4 0.2 0 0.2 0.4
0.6
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
100
10
1
F
I - Forward Current ( mA )
0.1
012345
16634
VF- Forward Voltage(V)
Figure 2. Forward Current vs. Ambient Temperature
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2
Figure 4. Forward Current vs. Forward Voltage
Document Number 83288
Rev. 1.3, 31-Aug-04
Page 3
VISHAY
1.6
Red
1.2
0.8
0.4
IF=10mA
v rel
I - Relative Luminous Intensity
0
20 40 60 800 100
T
95 10074
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10
- Ambient Temperature (° C)
amb
Red
TLUR240.
Vishay Semiconductors
1
0.1
v rel
I - Relative Luminous Intensity
95 10076
0.01
I
101
- Forward Current ( mA )
F
100
Figure 6. Relative Luminous Intensity vs. Forward Current
1.2
Red
1.0
0.8
0.6
0.4
rel
I – Relative Intensity
0.2
0.0
550 590 630 670 710 750
17521
l – Wavelength ( nm )
Figure 7. Relative Intensity vs. Wavelength
Document Number 83288
Rev. 1.3, 31-Aug-04
www.vishay.com
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TLUR240.
Vishay Semiconductors
Package Dimensions in mm
VISHAY
95 11262
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4
Document Number 83288
Rev. 1.3, 31-Aug-04
Page 5
VISHAY
TLUR240.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83288
Rev. 1.3, 31-Aug-04
www.vishay.com
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