VISHAY VIS TLMO 1000 Datasheet

VISHAY

18562

e3

Pb

Pb-free

Low Current 0603 LED

Description

The new 0603 LED series have been designed in the
smallest SMD package. This innovative 0603 LED
technology opens the way to

• smaller products of higher performance

• more design in flexibility

• enhanced applications
The 0603 LED is an obvious solution for small-scale,

high power products that are expected to work reli­ability in an arduous environment.

TLMO / S / Y1000

Vishay Semiconductors

Features

• Smallest SMD package 0603 with exceptional
brightness 1.6 mm x 0.8 mm x 0.6 mm (L x W x H)

• High reliability lead frame based

• Temperature range - 40 °C to + 100 °C

• Footprint compatible to 0603 chipled

• Wavelength 633 nm (red), 606 nm (orange),
587 nm (yellow)

Applications

Backlight keypads
Navigation systems
Cellular phone displays
Displays for industrial control systems
Automotive features
Miniaturized color effects
Traffic displays

• AllnGaP and InGaN technology

• Viewing angle: extremely wide 160 °

• Grouping parameter: luminous intensity,

Parts Table

wavelength

• Available in 8 mm tape

• Lead-free device

TLMS1000 Red, I

TLMO1000 Soft Orange, I

TLMY1000 Yellow, I

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

TLMS1000 ,TLMO1000 ,TLMY1000

Parameter Test condition Symbol Value Unit

Reverse voltage V

DC Forward current T

Surge forward current t

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature acc. Vishay spec T

Thermal resistance junction/
ambient

≤ 95 °C I

amb

≤ 10 µsI

p

≤ 95 °C P

amb

mounted on PC board

(pad size > 5 mm

2

)

Part Color, Luminous Intensity

= 4 mcd (typ.)

V

= 6.5 mcd (typ.)

V

12 V

15 mA

0.1 A

40 mW

125 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

500 K/W

R

R

F

FSM

V

j

amb

stg

sd

thJA

= 8 mcd (typ.)

V

Document Number 83172

Rev. 1.3, 30-Aug-04

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1

TLMO / S / Y1000

Vishay Semiconductors

Optical and Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Red

TLMS1000

Parameter Test condition Symbol Min Ty p. Max Unit

Luminous intensity

2)

Dominant wavelength I

Peak wavelength I

Angle of half intensity I

Forward voltage I

Reverse voltage I

Junction capacitance V

2)

in one Packing Unit I

Vmax/IVmin

Soft Orange

TLMO1000

Parameter Test condition Symbol Min Ty p. Max Unit

Luminous intensity

Dominant wavelength I

Peak wavelength I

Angle of half intensity I

Forward voltage I

Reverse voltage I

Junction capacitance V

2)

in one Packing Unit I

2)

Vmax/IVmin

IF = 2 mA I

= 2 mA λ

F

= 2 mA λ

F

= 2 mA ϕ ± 80 deg

F

= 2 mA V

F

= 10 µAV

R

= 0, f = 1 MHz C

R

≤ 1.6

IF = 2 mA I

= 2 mA λ

F

= 2 mA λ

F

= 2 mA ϕ ± 80 deg

F

= 2 mA V

F

= 10 µAV

R

= 0, f = 1 MHz C

R

≤ 1.6

VISHAY

V

d

p

F

R

j

V

d

p

F

R

j

1.6 4 mcd

624 628 636 nm

640 nm

1.8 2.6 V

6V

15 pF

3.2 7.5 mcd

600 605 609 nm

610 nm

1.8 2.6 V

6V

15 pF

Yellow

TLMY1000

Parameter Test condition Symbol Min Ty p. Max Unit

Luminous intensity

Dominant wavelength I

Peak wavelength I

Angle of half intensity I

Forward voltage I

Reverse voltage I

Junction capacitance V

2)

in one Packing Unit I

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2

2)

Vmax/IVmin

IF = 2 mA I

= 2 mA λ

F

= 2 mA λ

F

= 2 mA ϕ ± 80 deg

F

= 2 mA V

F

= 10 µAV

R

= 0, f = 1 MHz C

R

V

d

p

F

R

j

3.2 7.5 mcd

580 588 595 nm

591 nm

1.8 2.6 V

6V

15 pF

≤ 1.6

Document Number 83172

Rev. 1.3, 30-Aug-04

VISHAY

Color Classification

Group Dominant Wavelength (nm)

Ye l l o w Orange

min max min max

1

2 580 583 600 603

3 583 586 602 605

4 586 589 604 607

5 589 592 606 609

6 592 595

Luminous Intensity Classification

Group Luminous Intensity (mcd)

Ma 1.6 2.5

Mb 2 3.2

Na 2.5 4

Nb 3.2 5

Pa 4 6. 3

Pb 5 8

Qa 6.3 10

Qb 8 12.5

Ra 10 16

Rb 12.5 20

Sa 16 25

Sb 20 32

TLMO / S / Y1000

Vishay Semiconductors

min max

Group Name on Label

Luminous Intensity Group Halfgroup Wavelength Forward Voltage

Qb41

One packing unit/tape contains only one classification group of luminous intensity, color and forward voltage

Only one single classification groups is not available

The given groups are not order codes, customer specific group combinations require marketing agreement

No color subgrouping for Super Red

Document Number 83172

Rev. 1.3, 30-Aug-04

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3

TLMO / S / Y1000

Vishay Semiconductors

VISHAY

Typical Characteristics (T

60
55
50
45
40
35
30
25
20
15

V

10

P –Power Dissipation (mW)

5
0

0 20406080100120

19146

T

– Ambient Temperature ( qC )

amb

= 25 °C unless otherwise specified)

amb

Figure 1. Power Dissipation vs. Ambient Temperature

25

20

15

10

5

V

P –Power Dissipation (mW)

0

0 20406080100120

19147

T

– Ambient Temperature ( qC )

amb

10

Orange

1

F

I - Forward Current ( mA )

0.1
1 1.5 2 2.5 3

19130

VF- Forward Voltage(V)

Figure 4. Forward Current vs. Forward Voltage

1

Orange

0.8

0.6

0.4

0.2

0

-0.2

-0.4

- Dominant Wavelength ( nm )λ

-0.6

d

-0.8

-1

0.1 1 10

I

- Forward Current ( mA )

19133

F

Figure 2. Power Dissipation vs. Ambient Temperature

10

Orange

1

0.1

Vrel

I - Relative Luminous Intensity

0.01

0.1 1 10

19127

IF- Forward Current ( mA )

Figure 3. Relative Luminous Intensity vs. Forward Current

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4

Figure 5. Dominant Wavelength vs. Forward Current

8

Orange

6

4

2

0

–2

– Change of Dom. Wavelength (nm)n l

–4

d

–6

–200 20406080100

T

– Ambient Temperature ( qC )

19136

amb

Figure 6. Change of Dominant Wavelength vs. Ambient

Temperature

Document Number 83172

Rev. 1.3, 30-Aug-04

VISHAY

TLMO / S / Y1000

Vishay Semiconductors

2.4
Orange

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Vrel

I - Relative Luminous Intensity

0.2

0

-20 200 40 6080100

T

19139

- Ambient Temperature ( °C)

amb

IF=2mA

Figure 7. Relative Luminous Intensity vs. Amb. Temperature

2.20
Orange

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

F

V - Forward Voltage(V)

1.70

1.65

1.60

–200 20406080100

T

19143

- Ambient Temperature ( °C)

amb

IF=20mA

10

Yellow

1

F

I - Forward Current ( mA )

0.1
1 1.5 2 2.5 3

19131

VF- Forward Voltage(V)

Figure 10. Forward Current vs. Forward Voltage

1

Yellow

0.8

0.6

0.4

0.2

0

-0.2

-0.4

- Dominant Wavelength ( nm )λ

-0.6

d

-0.8

-1

0.1 1 10

19134

IF- Forward Current ( mA )

Figure 8. Forward Voltage vs. Ambient Temperature

10.00

Yellow

1.00

0.10

Vrel

I –Relative Luminous Intensity

0.01

0.10 1.00 10.00

19128

IF – Forward Current ( mA )

Figure 9. Relative Luminous Intensity vs. Forward Current

Document Number 83172

Rev. 1.3, 30-Aug-04

Figure 11. Dominant Wavelength vs. Forward Current

10

Yellow

8

6

4

2

0

-2

-4

- Change of Dom. Wavelength (nm)∆λ

d

-6

-20 200 40 6080100

T

- Ambient Temperature ( °C)

19137

amb

Figure 12. Change of Dominant Wavelength vs. Ambient

Temperature

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TLMO / S / Y1000

Vishay Semiconductors

VISHAY

2.4
Yellow

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Vrel

I - Relative Luminous Intensity

0.2

0

-20 200 40 60 80 100

19141

T

- Ambient Temperature ( °C)

amb

IF=2mA

Figure 13. Relative Luminous Intensity vs. Amb. Temperature

V - Forward Voltage(V)

19144

F

2.20

2.15

2.10

2.05

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

Yellow

-20 20 40 60 80 1000

T

amb

- Ambient Temperature ( °C)

IF=20mA

10

Red

1

F

I - Forward Current ( mA )

0.1
1 1.5 2 2.5 3

19132

VF- Forward V oltage(V)

Figure 16. Forward Current vs. Forward Voltage

1

Red

0.8

0.6

0.4

0.2

0

-0.2

-0.4

- Dominant Wavelength ( nm )λ

-0.6

d

-0.8

-1

0.1 1 10

I

- Forward Current ( mA )

19135

F

Figure 14. Forward Voltage vs. Ambient Temperature

10

Red

1

0.1

Vrel

I - Relative Luminous Intensity

0.01

0.1 1 10

19129

IF- Forward Current ( mA )

Figure 15. Relative Luminous Intensity vs. Forward Current

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6

Figure 17. Dominant Wavelength vs. Forward Current

6

Red

4

2

0

-2

- Change of Dom. Wavelength (nm)∆λ

d

-4

ı

-20 200 40 6080100

T

- Ambient Temperature ( °C)

19138

amb

Figure 18. Change of Dominant Wavelength vs. Ambient

Temperature

Document Number 83172

Rev. 1.3, 30-Aug-04

VISHAY

TLMO / S / Y1000

Vishay Semiconductors

2.4
Red

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

Vrel

I - Relative Luminous Intensity

0.2

0

-20 200 40 60 80 100

19142

T

- Ambient Temperature ( °C)

amb

IF=2mA

Figure 19. Relative Luminous Intensity vs. Amb. Temperature

V - Forward Voltage(V)

19145

F

2.00

1.95

1.90

1.85

1.80

1.75

1.70

1.65

1.60

Red

-20 20 40 60 80 1000

T

amb

- Ambient Temperature ( °C)

IF=20mA

Figure 20. Forward Voltage vs. Ambient Temperature

Document Number 83172

Rev. 1.3, 30-Aug-04

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TLMO / S / Y1000

Vishay Semiconductors

Reel Dimensions

VISHAY

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8

19043

Document Number 83172

Rev. 1.3, 30-Aug-04

VISHAY

Tape Dimensions

TLMO / S / Y1000

Vishay Semiconductors

Document Number 83172

Rev. 1.3, 30-Aug-04

19044

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9

TLMO / S / Y1000

Vishay Semiconductors

Package Dimensions in mm

VISHAY

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10

18561

Document Number 83172

Rev. 1.3, 30-Aug-04

VISHAY

TLMO / S / Y1000

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83172

Rev. 1.3, 30-Aug-04

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