VISHAY VESD05A8A-HNH Technical data
VESD05A8A-HNH
Vishay Semiconductors
8-Line ESD-Protection Diode Array in LLP1713-9L
Features
• Ultra compact LLP1713-9L package
• Low package profile < 0.6 mm
• 8-line ESD-protection
• Low leakage current I
• Low load capacitance C
< 1 µA
R
= 30 pF
D
• ESD-immunity acc. IEC 61000-4-2
± 25 kV contact discharge
± 30 kV air discharge
• Working voltage range V
RWM
= 5 V
• Lead (Pb)-free component
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
20522
1
2
3
4
8
9
7
6
5
20521
Marking
B U4
20523
Dot = Pin 1 marking
B = Type code (see table below)
U4 = Date code (example only)
Ordering Information
Device name Ordering code
VESD05A8A-HNH VESD05A8A-HNH-GS08 3000 15000
Package Data
Device name
VESD05A8A-HNH LLP1713-9L B 3.7 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Package
name
Marking
code
Weight
Molding
compound
flammability rating
Taped units per reel
(8 mm tape on 7" reel)
Moisture sensitivity level Soldering conditions
Minimum order quantity
Document Number 81629
Rev. 1.2, 22-Feb-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
VESD05A8A-HNH
Vishay Semiconductors
Absolute Maximum Ratings
Rating Test condition Symbol Val ue Unit
BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9);
Peak pulse current
Pin 9 not connected. Acc. IEC 61000-4-5; t
Peak pulse power
Pin 9 not connected. Acc. IEC 61000-4-5; t
BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9)
ESD-immunity
BiSy-mode: each input (pin 1 - pin 8) to any other input pin.
Operating temperature junction temperature
Storage temperature
acc. IEC 61000-4-5; t
BiSy-mode: each input (pin 1 - pin 8) to any other input pin.
BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9);
acc. IEC 61000-4-5; t
BiSy-mode: each input (pin 1 - pin 8) to any other input pin.
acc. IEC61000-4-2; 10 pulses
acc. IEC 61000-4-2 ; 10 pulses
Pin 9 not connected.
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
contact
discharge
air
discharge
contact
discharge
air
discharge
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
V
ESD
V
ESD
T
- 40 to + 125 °C
J
T
- 55 to + 150 °C
STG
5A
2.5 A
65 W
33 W
± 25 kV
± 30 kV
± 12 kV
± 12 kV
BiAs-Mode (8-line Bidirectional Asymmetrical protection mode)
With the VESD05A8A-HNH up to 8 signal- or data-lines (L1 - L8) can be protected against voltage transients.
With pin 9 connected to ground and pin 1 up to pin 8 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (V
isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (V
ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A8A-HNH clamping behaviour
is Bi
directional and Asymmetrical (BiAs).
L1
L2
L3
L4
1
2
3
4
) the protection diode between data line and ground offer a high
RWM
) is defined by the BReakthrough Voltage (VBR) level
C
) clamps the negative transient close to the
F
8
9
7
6
5
L8
L7
L6
L5
www.vishay.com
2
20524
For technical support, please contact: ESD-Protection@vishay.com
Document Number 81629
Rev. 1.2, 22-Feb-08
VESD05A8A-HNH
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A8A-HNH
BiAs mode: each input (pin 1 - pin 8) to ground (pin 9)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths number of line which can be protected N lines 8 lines
at I
Reverse current
Max. reverse current
Min. reverse breakdown
voltage
= 5 A acc. IEC 61000-4-5 V
Max. clamping voltage
Max. forward clamping
voltage
Line capacitance
at I
PP
at I
= 5 A acc. IEC 61000-4-5 V
F
at V
at V
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the
VESD05A8A-HNH can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
• double surge power = double peak pulse current (2 x I
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line Capacitance (2 x C
• double Reverse leakage current (2 x I
= 1 µA V
R
= V
at V
R
at I
= 0 V; f = 1 MHz C
R
= 2.5 V; f = 1 MHz C
R
= 5 V I
RWM
= 1 mA V
R
)
D
)
R
RWM
R
BR
C
F
D
D
5V
< 0.1 1 µA
68V
13 V
4.5 V
30 35 pF
18 23 pF
)
PPM
L1
L2
1
2
3
4
8
9
7
6
5
L4
L3
20525
Document Number 81629
Rev. 1.2, 22-Feb-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
3
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