VISHAY VESD05A8A-HNH Technical data

VESD05A8A-HNH

Vishay Semiconductors

8-Line ESD-Protection Diode Array in LLP1713-9L

Features

• Ultra compact LLP1713-9L package

• Low package profile < 0.6 mm

• 8-line ESD-protection

• Low leakage current I

• Low load capacitance C

< 1 µA

R

= 30 pF

D

• ESD-immunity acc. IEC 61000-4-2
± 25 kV contact discharge
± 30 kV air discharge

• Working voltage range V

RWM

= 5 V

• Lead (Pb)-free component

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

e3

20522

1

2

3

4

8

9

7

6

5

20521

Marking

B U4

20523

Dot = Pin 1 marking
B = Type code (see table below)
U4 = Date code (example only)

Ordering Information

Device name Ordering code

VESD05A8A-HNH VESD05A8A-HNH-GS08 3000 15000

Package Data

Device name

VESD05A8A-HNH LLP1713-9L B 3.7 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

Package

name

Marking

code

Weight

Molding

compound

flammability rating

Taped units per reel

(8 mm tape on 7" reel)

Moisture sensitivity level Soldering conditions

Minimum order quantity

Document Number 81629

Rev. 1.2, 22-Feb-08

For technical support, please contact: [e-mail]

www.vishay.com

1

VESD05A8A-HNH

Vishay Semiconductors

Absolute Maximum Ratings

Rating Test condition Symbol Val ue Unit

BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9);

Peak pulse current

Pin 9 not connected. Acc. IEC 61000-4-5; t

Peak pulse power

Pin 9 not connected. Acc. IEC 61000-4-5; t

BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9)

ESD-immunity

BiSy-mode: each input (pin 1 - pin 8) to any other input pin.

Operating temperature junction temperature

Storage temperature

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 8) to any other input pin.

BiAs-mode: each input (pin 1 - pin 8) to ground (pin 9);

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 8) to any other input pin.

acc. IEC61000-4-2; 10 pulses

acc. IEC 61000-4-2 ; 10 pulses

Pin 9 not connected.

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

contact

discharge

air

discharge

contact

discharge

air

discharge

I

PPM

I

PPM

P

PP

P

PP

V

ESD

V

ESD

V

ESD

V

ESD

T

- 40 to + 125 °C

J

T

- 55 to + 150 °C

STG

5A

2.5 A

65 W

33 W

± 25 kV

± 30 kV

± 12 kV

± 12 kV

BiAs-Mode (8-line Bidirectional Asymmetrical protection mode)

With the VESD05A8A-HNH up to 8 signal- or data-lines (L1 - L8) can be protected against voltage transients.
With pin 9 connected to ground and pin 1 up to pin 8 connected to a signal- or data-line which has to be pro­tected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (V
isolation to the ground line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the for­ward direction of the protection diode. The low Forward Voltage (V
ground level.

Due to the different clamping levels in forward and reverse direction the VESD05A8A-HNH clamping behaviour
is Bi

directional and Asymmetrical (BiAs).

L1

L2

L3

L4

1

2

3

4

) the protection diode between data line and ground offer a high

RWM

) is defined by the BReakthrough Voltage (VBR) level

C

) clamps the negative transient close to the

F

8

9

7

6

5

L8

L7

L6

L5

www.vishay.com

2

20524

For technical support, please contact: [e-mail]

Document Number 81629

Rev. 1.2, 22-Feb-08

VESD05A8A-HNH

Vishay Semiconductors

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VESD05A8A-HNH

BiAs mode: each input (pin 1 - pin 8) to ground (pin 9)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths number of line which can be protected N lines 8 lines

at I

Reverse current

Max. reverse current

Min. reverse breakdown
voltage

= 5 A acc. IEC 61000-4-5 V

Max. clamping voltage

Max. forward clamping
voltage

Line capacitance

at I

PP

at I

= 5 A acc. IEC 61000-4-5 V

F

at V

at V

If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the
VESD05A8A-HNH can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get

• double surge power = double peak pulse current (2 x I

• half of the line inductance = reduced clamping voltage

• half of the line resistance = reduced clamping voltage

• double line Capacitance (2 x C

• double Reverse leakage current (2 x I

= 1 µA V

R

= V

at V

R

at I

= 0 V; f = 1 MHz C

R

= 2.5 V; f = 1 MHz C

R

= 5 V I

RWM

= 1 mA V

R

)

D

)

R

RWM

R

BR

C

F

D

D

5V

< 0.1 1 µA

68V

13 V

4.5 V

30 35 pF

18 23 pF

)

PPM

L1

L2

1

2

3

4

8

9

7

6

5

L4

L3

20525

Document Number 81629

Rev. 1.2, 22-Feb-08

For technical support, please contact: [e-mail]

www.vishay.com

3

VESD05A8A-HNH

Vishay Semiconductors

BiSy-mode (7-line Bidirectional Symmetrical protection mode)

If a bipolar symmetrical protection device is needed the VESD05A8A-HNH can also be used as a seven-line
protection device. Therefore seven pins (example: pin 1, 2, 3, 4, 6, 7 and 8) has to be connected to the signal­or data-line (L1 - L7) and pin 5 to ground. Pin 9 must not be connected!

Positive and negative voltage transients will be clamped in the same way. The clamping current from one data
line through the VESD05A8A-HNH to the ground passes one diode in forward direction and the other one in
reverse direction. The Clamping Voltage (V
plus the forward voltage of the other diode plus the voltage drop at the series impedances (resistances and
inductances) of the protection device.

Due to the same clamping levels in positive and negative direction the VESD05A8A-HNH voltage clamping
behaviour is also Bi

directional and Symmetrical (BiSy).

) is defined by the BReakthrough Voltage (VBR) level of one diode

C

L1

L2

L3

L4

1

2

3

4

8

9

7

6

5

L7

L6

L5

20526_1

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VESD05A8A-HNH

BiSy mode: each input (pin 1 - pin 8) to any other input pin connected to ground; pin 9 not connected

Paramete r Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths number of line which can be protected

= 1 µA V

Reverse current

Max. reverse current

Min. reverse breakdown
voltage

Max. clamping voltage

Line capacitance

at I

at I

R

= V

at V

R

at I

= 2.5 A acc. IEC 61000-4-5 V

PP

at V

= 0 V; f = 1 MHz C

R

= 2.5 V; f = 1 MHz C

at V

R

= 5.5 V I

RWM

= 1 mA V

R

N

lines

RWM

R

BR

C

D

D

5.5 V

< 0.1 1 µA

6.5 8.7 V

15 18 pF

13 15 pF

7lines

13 V

www.vishay.com

4

For technical support, please contact: [e-mail]

Document Number 81629

Rev. 1.2, 22-Feb-08

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

8 µs to 100 %

I

100 %

80 %

60 %

PPM

40 %

20 µs to 50 %

VESD05A8A-HNH

100

Pin 9 to
Pin 1, 2, 3, 4, 5, 6, 7 or 8

10

1

(mA)

F

I

0.1

Vishay Semiconductors

20 %

0 %

010203040

20548

Time (µs)

Figure 1. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

120 %

100 %

ESD

Discharge Current I

20557

80 %

60 %

53 %

40 %

27 %

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

rise time = 0.7 ns to 1 ns

Time (ns)

Figure 2. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

0.01

0.001

0.5 0.6 0.7 0.8 0.9 1

20559

VF (V)

Figure 4. Typical Forward Current IF vs. Forward Voltage V

8

Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9

7

6

5

(V)

4

R

V

3

2

1

0

0.01 0.1 1 10 100 1000 10000

20560

IR (µA)

Figure 5. Typical Reverse Voltage VR vs.

Reverse Current I

R

F

35

f = 1 MHz

30

(pF)

D

C

20558

25

20

15

10

5

0

Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9

BiSy-mode
between 2 Pins (1 - 8)
Pin 9 not connetced

012 456

Figure 3. Typical Capacitance C

Document Number 81629

Rev. 1.2, 22-Feb-08

14

12

BiAs-mode

VR (V)

3

vs. Reverse Voltage V

D

R

10

(V)

C

V

- 2

- 4

- 6

20561

Figure 6. Typical Peak Clamping Voltage VC vs.

For technical support, please contact: [e-mail]

Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9

positive surge

8

6

Measured
acc. IEC 61000-4-5

4

(8/20 µs - wave form)

2

0

negative surge

0123456

V

C

IPP (A)

Peak Pulse Current I

PP

www.vishay.com

5

VESD05A8A-HNH

Vishay Semiconductors

80

60

40

(V)

20

C-ESD

V

0

- 20

- 40

- 10 0 10 20 30 40 50 60 70 8090

20562

acc. IEC 61000-4-2

+ 8 kV

contact discharge

t (ns)

Figure 7. Typical Clamping Performance at + 8 kV

Contact Discharge (Acc. IEC 61000-4-2)

40

20

0

acc. IEC 61000-4-2

- 8 kV

contact discharge

(V)

- 20

C-ESD

V

- 40

- 60

- 80

- 10 0 10 20 30 40 50 60 70 8090

20563

t (ns)

Figure 8. Typical Clamping Performance at - 8 kV Contact

Discharge (acc. IEC 61000-4-2)

250

acc. IEC 61000-4-2 contact discharge

Pin 1, 2, 3, 4, 5, 6, 7 or 8 to Pin 9

200

150

positive discharge

100

50

(V)

0

C-ESD

V

- 50

- 100
negative discharge

- 150

- 200

0 5 10 15 20 25 30

20564

V

C-ESD

V

(kV)

ESD

Figure 9. Typical Peak Clamping Voltage at ESD Contact

Discharge (acc. IEC 61000-4-2)

www.vishay.com

6

For technical support, please contact: [e-mail]

Document Number 81629

Rev. 1.2, 22-Feb-08

Package Dimensions in millimeters (inches): LLP1713-9L

VESD05A8A-HNH

Vishay Semiconductors

20386

Document Number 81629

Rev. 1.2, 22-Feb-08

For technical support, please contact: [e-mail]

www.vishay.com

7

VESD05A8A-HNH

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

8

For technical support, please contact: [e-mail]

Document Number 81629

Rev. 1.2, 22-Feb-08

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1