VISHAY VESD05A6A-HA3 Technical data

VESD05A6A-HA3

6-Line ESD-Protection Diode Array in LLP75

Features

• Ultra compact LLP75-7A package

• 6-line ESD-protection

• Low leakage current I

• Low load capacitance C

• ESD-immunity acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge

• Working voltage range V

• Lead (Pb)-free component

• "Green" molding compound

• Non-magnetic

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

< 0.1 µA

R

= 13 pF

D

RWM

e3

= 5 V

19369

Vishay Semiconductors

54

6

7

2

1

19371

3

Marking (example only)

XX
YY

21001

dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)

Ordering Information

Device name Ordering code

VESD05A6A-HA3 VESD05A6A-HA3-GS08 3000 15000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name

VESD05A6A-HA3 LLP75-7A AG 5 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

Package

name

Type
code

Weight

Molding

compound

flammability rating

Moisture sensitivity level Soldering conditions

Document Number 81878

Rev. 1.0, 18-Apr-08

For technical support, please contact: [e-mail]

www.vishay.com

1

VESD05A6A-HA3

L

L

Vishay Semiconductors

Absolute Maximum Ratings

Rating Test condition Symbol Val ue Unit

BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2);

Peak pulse current

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected. Acc. IEC 61000-4-5; t

BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2);

Peak pulse power

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected. Acc. IEC 61000-4-5; t

Acc. IEC61000-4-2; 10 pulses

BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2)

ESD immunity

Acc. IEC 61000-4-2 ; 10 pulses

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected

Operating temperature Junction temperature

Storage temperature

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

Contact

discharge

discharge

Contact

discharge

discharge

Air

Air

I

PPM

I

PPM

P

PP

P

PP

V

ESD

V

ESD

V

ESD

V

ESD

T

- 40 to + 125 °C

J

T

- 55 to + 150 °C

STG

2.5 A

2.5 A

33 W

43 W

± 15 kV

± 15 kV

± 10 kV

± 10 kV

Application Note:

a) With the VESD05A6A-HA3 6 different signal or data lines can be clamped to ground. Due to the different

clamping levels in forward and reverse direction the VESD05A6A-HA3 clamping behavior is Bi
and As

ymmetrical (BiAs).

19365

1

L2

L4

L3

L5

L6

6

1

54

7

2

3

b) If symmetrical clamping behaviour is required the VESD05A6A-HA3 can also be used as a Bi
Sy

mmetrical protection device protecting up to 5 lines. In this case pin no. 7 must not be connected.

1

L2

L3

directional

directional

54

6

7

2

3

19366

Document Number 81878

Rev. 1.0, 18-Apr-08

www.vishay.com

2

L4

1

L5

For technical support, please contact: [e-mail]

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VESD05A6A-HA3

BiAs mode (between pin 1, 2, 3, 4, 5 or 6 and pin 7)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected

at I

Reverse stand off voltage

Max. reverse current

Reverse break down voltage

Reverse clamping voltage

Forward clamping voltage

Line capacitance

at V

at V

= 0.1 µA V

R

= 5 V I

at V

R

at I

= 1 mA V

R

= 1 A V

at I

PP

at I

= I

PP

at I

PP

R

= 2.5 V; f = 1 MHz C

R

= 2.5 A V

PPM

at I

= 1 A

PP

= I

= 2.5 A V

PPM

= 0 V; f = 1 MHz C

N

lines

RWM

R

BR

C

C

V

F

F

D

D

VESD05A6A-HA3

Vishay Semiconductors

6 lines

5V

< 0.01 0.1 µA

66.77.5V

910V

12 13 V

22.5V

3.2 4 V

13 15 pF

8pF

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

80 %

60 %

53 %

40 %

27 %

Discharge Current I

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

20557

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

rise time = 0.7 ns to 1 ns

Time (ns)

8 µs to 100 %

20 µs to 50 %

Time (µs)

I

100 %

80 %

60 %

PPM

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Document Number 81878

Rev. 1.0, 18-Apr-08

For technical support, please contact: [e-mail]

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3

VESD05A6A-HA3

Vishay Semiconductors

(pF)

D

C

19948

16

14

12

10

8

6

4

2

0

04321

VR (V)

f = 1 MHz

5

Figure 3. Typical Capacitance CD vs. Reverse Voltage V

100

10

1

(mA)

F

I

0.1

0.01

14

Measured acc. IEC 61000-4-5 (8/20 µs - wave form)

12

10

8

6

4

(V)

C

V

2

0

- 2

- 4

- 6
04321

0.5 3.52.51.5

19951

R

Figure 6. Typical Clamping Voltage vs. Peak Pulse Current I

100

80

60

(V)

40

C-ESD

V

20

0

IPP (A)

reverse

V

C

forward

acc. IEC 61000-4-2

+ 8 kV

contact discharge

PP

0.001

0.5 10.80.70.6

19949

VF (V)

0.9

1.1

Figure 4. Typical Forward Current IF vs. Forward Voltage V

8

7

6

5

(V)

4

R

V

3

2

1

19950

0

0.01 1001010.1

IR (µA)

1000

10 000

Figure 5. Typical Reverse Voltage VR vs. Reverse Current I

- 20

19994

F

Figure 7. Typical Clamping Performance at + 8 kV Contact

30

40 80706050

20100- 10

t (ns)

90

Discharge (acc. IEC 61000-4-2)

40

20

0

- 20

(V)

C-ESD

- 40

V

- 60

acc. IEC 61000-4-2

- 80

- 100

19995

R

Figure 8. Typical Clamping Performance at - 8 kV Contact

Discharge (acc. IEC 61000-4-2)

30

20100- 10

t (ns)

contact discharge

40 80706050

- 8 kV

90

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For technical support, please contact: [e-mail]

Document Number 81878

Rev. 1.0, 18-Apr-08

200

acc. IEC 61000-4-2

contact discharge

150

100

(V)

C-ESD

V

19954

50

0

- 50

- 100

- 150

- 200

V

C-ESD

1050

V

(kV)

ESD

15

20

Figure 9. Typical max. Clamping Voltage at ESD Contact

Discharge (acc. IEC 61000-4-2)

Package Dimensions in millimeters (inches): LLP75-7A

VESD05A6A-HA3

Vishay Semiconductors

Document Number 81878

Rev. 1.0, 18-Apr-08

20459

For technical support, please contact: [e-mail]

www.vishay.com

5

VESD05A6A-HA3

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

www.vishay.com

6

For technical support, please contact: [e-mail]

Document Number 81878

Rev. 1.0, 18-Apr-08

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1