VISHAY VESD05A6A-HA3 Technical data

VESD05A6A-HA3

6-Line ESD-Protection Diode Array in LLP75

Features

• Ultra compact LLP75-7A package

• 6-line ESD-protection

• Low leakage current I

• Low load capacitance C

• ESD-immunity acc. IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge

• Working voltage range V

• Lead (Pb)-free component

• "Green" molding compound

• Non-magnetic

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

< 0.1 µA

R

= 13 pF

D

RWM

e3

= 5 V

19369

Vishay Semiconductors

54

6

7

2

1

19371

3

Marking (example only)

XX YY

21001

dot = Pin 1 marking XX = Date code YY = Type code (see table below)

Ordering Information

Device name Ordering code

VESD05A6A-HA3 VESD05A6A-HA3-GS08 3000 15000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name

VESD05A6A-HA3 LLP75-7A AG 5 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals

Package

name

Type code

Weight

Molding

compound

flammability rating

Moisture sensitivity level Soldering conditions

Document Number 81878

Rev. 1.0, 18-Apr-08

For technical support, please contact: ESD-Protection@vishay.com

www.vishay.com

1

VESD05A6A-HA3

L

Vishay Semiconductors

Absolute Maximum Ratings

Rating Test condition Symbol Val ue Unit

BiAs-Mode: each input (pin 1 - pin 6) to ground (pin 2);

Peak pulse current

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected. Acc. IEC 61000-4-5; t

BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2);

Peak pulse power

acc. IEC 61000-4-5; t

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected. Acc. IEC 61000-4-5; t

Acc. IEC61000-4-2; 10 pulses

BiAs-mode: each input (pin 1 - pin 6) to ground (pin 2)

ESD immunity

Acc. IEC 61000-4-2 ; 10 pulses

BiSy-mode: each input (pin 1 - pin 6) to any other input pin.

Pin 2 not connected

Operating temperature Junction temperature

Storage temperature

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

= 8/20 µs; single shot

p

Contact

discharge

Contact

discharge

Air

I

PPM

I

PPM

P

PP

P

PP

V

ESD

V

ESD

V

ESD

V

ESD

T

- 40 to + 125 °C

J

T

- 55 to + 150 °C

STG

2.5 A

33 W

43 W

± 15 kV

± 10 kV

Application Note:

a) With the VESD05A6A-HA3 6 different signal or data lines can be clamped to ground. Due to the different

clamping levels in forward and reverse direction the VESD05A6A-HA3 clamping behavior is Bi and As

ymmetrical (BiAs).

19365

1

L2

L4

L3

L5

L6

6

1

54

7

2

3

b) If symmetrical clamping behaviour is required the VESD05A6A-HA3 can also be used as a Bi Sy

mmetrical protection device protecting up to 5 lines. In this case pin no. 7 must not be connected.

1

L2

L3

directional

54

6

7

2

3

19366

Document Number 81878

Rev. 1.0, 18-Apr-08

www.vishay.com

2

L4

1

L5

For technical support, please contact: ESD-Protection@vishay.com

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VESD05A6A-HA3

BiAs mode (between pin 1, 2, 3, 4, 5 or 6 and pin 7)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected

at I

Reverse stand off voltage

Max. reverse current

Reverse break down voltage

Reverse clamping voltage

Forward clamping voltage

Line capacitance

at V

= 0.1 µA V

R

= 5 V I

at V

R

at I

= 1 mA V

R

= 1 A V

at I

PP

at I

= I

PP

at I

PP

R

= 2.5 V; f = 1 MHz C

R

= 2.5 A V

PPM

at I

= 1 A

PP

= I

= 2.5 A V

PPM

= 0 V; f = 1 MHz C

N

lines

RWM

R

BR

C

V

F

D

VESD05A6A-HA3

Vishay Semiconductors

6 lines

5V

< 0.01 0.1 µA

66.77.5V

910V

12 13 V

22.5V

3.2 4 V

13 15 pF

8pF

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

80 %

60 %

53 %

40 %

27 %

Discharge Current I

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

20557

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

rise time = 0.7 ns to 1 ns

Time (ns)

8 µs to 100 %

20 µs to 50 %

Time (µs)

I

100 %

80 %

60 %

PPM

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Document Number 81878

Rev. 1.0, 18-Apr-08

For technical support, please contact: ESD-Protection@vishay.com

www.vishay.com

3