VISHAY VESD05A4A-HS4 Technical data
VESD05A4A-HS4
Vishay Semiconductors
4-Line (Quad) ESD Protection Diode Array in LLP1010-5L
Features
• Ultra compact LLP1010-5L package
• Low package height < 0.4 mm
• 4-line ESD protection (quad)
• Low leakage current < 0.1 µA
• Low load capacitance C
= 12 pF
D
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 17 kV air discharge
• Surge current acc. IEC 6100-4-5 I
> 2.5 A
PP
• Soldering can be checked by standard vision
inspection. No X-ray necessary
• Lead (Pb)-free component
• Pin plating NiPdAu (e4) no whisker growth
• "Green" molding compound
• Non-magnetic
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e4
20896
5
2
1
4
6
3
20897
Marking (example only)
XX
YY
20932
dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Ordering Information
Device name Ordering code
VESD05A4A-HS4 VESD05A4A-HS4-GS08 5000 5000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name
VESD05A4A-HS4 LLP1010-5L A 1.07 mg UL 94 V-0
Package
name
Type
code
Weight
Molding
compound
flammability rating
Moisture sensitivity level Soldering conditions
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Document Number 81786
Rev. 1.2, 27-Mar-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
VESD05A4A-HS4
Vishay Semiconductors
Absolute Maximum Ratings
Rating Test conditions Symbol Val ue Unit
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6);
Peak pulse current
Pin 2 and 6 not connected. Acc. IEC 61000-4-5; t
Peak pulse power
Pin 2 and 6 not connected. Acc. IEC 61000-4-5; t
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6)
ESD immunity
BiSy-mode: each input (pin 1, 3 - 5) to any other input pin.
Operating temperature junction temperature
Storage temperature
acc. IEC 61000-4-5; t
BiSy-mode: each input (pin 1, 3 - 5) to any other input pin.
BiAs-mode: each input (pin 1, 3 - 5) to ground (pin 2 and 6);
acc. IEC 61000-4-5; t
BiSy-mode: each input (pin 1, 3 - 5) to any other input pin.
acc. IEC61000-4-2; 10 pulses
acc. IEC 61000-4-2 ; 10 pulses
Pin 2 and 6 not connected.
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
= 8/20 µs; single shot
p
contact
discharge
air
discharge
contact
discharge
air
discharge
I
PPM
I
PPM
P
PP
P
PP
V
ESD
V
ESD
V
ESD
V
ESD
T
- 40 to + 125 °C
J
T
- 55 to + 150 °C
STG
2.5 A
2.5 A
30 W
33 W
± 15 kV
± 17 kV
± 15 kV
± 17 kV
BiAs-Mode (4-line Bidirectional Asymmetrical protection mode)
With the VESD05A4A-HS4 up to 4 signal- or data-lines (L1 - L4) can be protected against voltage transients.
With pin 2 and 6 connected to ground and pin 1, 3, 4 and 5 connected to a signal- or data-line which has to be
protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (V
isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A4A-HS4 clamping behaviour
is Bi
directional and Asymmetrical (BiAs).
L4
5
2
1
L1
) the protection diode between data line and ground offer a high
RWM
) is defined by the BReakthrough Voltage (VBR) level
C
) clamps the negative transient close to
F
L3
4
6
3
L2
www.vishay.com
2
20898
For technical support, please contact: ESD-Protection@vishay.com
Document Number 81786
Rev. 1.2, 27-Mar-08
VESD05A4A-HS4
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VESD05A4A-HS4
BiAs mode: each input (pin 1, 3, 4 and 5) to ground (pin 2 and/or 6)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths number of line which can be protected N lines 4 lines
at I
Reverse stand-off voltage
Reverse current
Reverse breakdown voltage
= 2.5 A acc. IEC 61000-4-5 V
Clamping voltage
Forward clamping voltage
Capacitance
at I
PP
at I
= 2.5 A acc. IEC 61000-4-5 V
F
at V
at V
If a higher surge current or Peak Pulse current (IPP) is needed, some protection diodes in the
VESD05A4A-HS4 can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
• double surge power = double peak pulse current (2 x I
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line Capacitance (2 x C
• double Reverse leakage current (2 x I
= 0.1 µA V
R
= V
at V
R
at I
= 0 V; f = 1 MHz C
R
= 2.5 V; f = 1 MHz C
R
= 5 V I
RWM
= 1 mA V
R
)
D
)
R
RWM
R
BR
C
F
D
D
5V
< 0.01 0.1 µA
68V
12 V
2.5 V
12 15 pF
7.5 8.5 pF
)
PPM
Document Number 81786
Rev. 1.2, 27-Mar-08
5
L1
1
For technical support, please contact: ESD-Protection@vishay.com
4
6
2
3
L2
20900
www.vishay.com
3
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