VISHAY VESD05A1B-HD1 Technical data

ESD-Protection Diode in LLP1006-2L

Features

• Ultra compact LLP1006-2L package

• Low package height < 0.4 mm

• 1-line ESD-protection

• Low leakage current < 0.1 µA

• Low load capacitance C
(V

= 2.5 V; f = 1 MHz)

R

• ESD-protection acc. IEC 61000-4-2

± 30 kV contact discharge
± 30 kV air discharge

• High surge current acc. IEC61000-4-5 I

• Soldering can be checked by standard vision
inspection. No X-ray necessary

• AEC Q101 qualified

• Lead (Pb)-free component

• Pin plating NiPdAu (e4) no whisker growth

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

= 12 pF

D

PP

> 3 A

VESD05A1B-HD1

Vishay Semiconductors

2

20855

1

20856

Marking (example only)

Bar = Cathode marking

XY

21121

X = Date code
Y = Type code (see table below)

Ordering Information

Device name Ordering code

VESD05A1B-HD1 VESD05A1B-HD1-GS08 8000 8000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name

VESD05A1B-HD1 LLP1006-2L D 0.72 mg UL 94 V-0

Package

name

Type
code

Weight

Molding compound

flammability rating

Moisture sensitivity level Soldering conditions

MSL level 1

(according J-STD-020)

260 °C/10 s at terminals

Absolute Maximum Ratings

Rating Test conditions Symbol Val ue Unit

Peak pulse current

Peak pulse power

ESD immunity

Operating temperature Junction temperature

Storage temperature

Acc. IEC 61000-4-5, t

Acc. IEC 61000-4-5, t

Contact discharge acc. IEC 61000-4-2; 10 pulses

Air discharge acc. IEC 61000-4-2; 10 pulses

= 8/20 µs/single shot I

P

= 8/20 µs/single shot P

P

V

V

T

PPM

PP

ESD

ESD

T

STG

3A

33 W

± 30 kV

± 30 kV

J

- 40 to + 125 °C

- 55 to + 150 °C

** Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902

Document Number 81796

Rev. 1.3, 27-Oct-08

For technical support, please contact: [e-mail]

www.vishay.com

1

VESD05A1B-HD1

Vishay Semiconductors

BiAs-Mode (Bidirectional Asymmetrical protection mode)

With the VESD05A1B-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With
pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as
the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
line. The protection device behaves like an open switch.

As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.

Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.

Due to the different clamping levels in forward and reverse direction the VESD05A1B-HD1 clamping behaviour
is Bi

directional and Asymmetrical (BiAs).

) the protection diode between data line and ground offers a high isolation to the ground

RWM

) is defined by the BReakthrough Voltage (VBR) level

C

) clamps the negative transient close to

F

L1

2

1

Electrical Characteristics

Ratings at 25 °C ambient temperature, unless otherwise specified

VESD05A1B-HD1

BiAs mode (between pin 1 and pin 2)

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected

at I

Reverse stand off voltage

Reverse current

Reverse break down voltage

Reverse clamping voltage

Forward clamping voltage

Capacitance

at V

at V

= 0.1 µA V

R

= 5 V I

at V

R

at I

= 1 mA V

R

= 1 A V

at I

PP

at I

= I

PP

at I

at I

at I

PP

= 0 V; f = 1 MHz C

R

= 2.5 V; f = 1 MHz C

R

= 3 A V

PPM

= 0.2 A V

PP

= 1 A V

PP

= I

= 3 A V

PPM

N

lines

RWM

R

BR

C

C

F

F

F

D

D

20925

1 lines

5V

0.01 0.1 µA

66.87.5V

89.5V

8.9 11 V

0.95 1.2 V

1.3 V

1.9 V

19 23 pF

12 pF

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For technical support, please contact: [e-mail]

Document Number 81796

Rev. 1.3, 27-Oct-08

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

VESD05A1B-HD1

Vishay Semiconductors

120 %

100 %

ESD

Discharge Current I

20557

80 %

60 %

53 %

40 %

27 %

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

Rise time = 0.7 ns to 1 ns

Time (ns)

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

8 µs to 100 %

20 µs to 50 %

Time (µs)

I

100 %

80 %

60 %

PPM

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

100

10

1

(mA)

F

I

0.1

0.01

0.001

21157

0.5 10.80.70.6

VF (V)

0.9

Figure 4. Typical Forward Current IF vs. Forward Voltage V

8

7

6

5

(V)

4

R

V

3

2

1

21158

0

0.01 1001010.1

IR (µA)

1000

10000

Figure 5. Typical Reverse Voltage VR vs. Reverse Current I

F

R

25

f = 1 MHz

20

15

(pF)

D

C

10

5

0

04321

21156

Figure 3. Typical Capacitance C

Document Number 81796

Rev. 1.3, 27-Oct-08

10

8

6

4

Measured acc. IEC 61000-4-5
(8/20 µs - wave form)

2

0

- 2

- 4
012345

VR (V)

vs. Reverse Voltage V

D

(V)

C

/V

F

V

5

21159

R

Figure 6. Typical Clamping Voltage vs. Peak Pulse Current I

For technical support, please contact: [e-mail]

reverse

forward

IPP (A)

PP

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