VISHAY VESD05A1B-02V Technical data
ESD-Protection Diode in SOD523
Features
• Single-line ESD-protection device
• ESD-immunity acc. IEC 61000-4-2
> 20 kV contact discharge
> 30 kV air discharge
• Typ. capacitance 12 pF (V
• Leakage current < 0.1 µA (V
= 2.5 V; f = 1 MHz)
R
= 5 V)
R
• Lead (Pb)-free component
• Non-magnetic package material
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Marking (example only)
e3
19344
VESD05A1B-02V
Vishay Semiconductors
1
2
20278
bar = Cathode marking
XY
20279
X = Date code
Y = Type code (see table below)
Ordering Information
Device name Ordering code
VESD05A1B-02V VESD05A1B-02V-GS08 3000 3000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name
VESD05A1B-02V SOD523 H 1.5 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Package
name
Type
code
Weight
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
Absolute Maximum Ratings
Rating Test condition Symbol Val ue Unit
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature Junction temperature
Storage temperature
Acc. IEC 61000-4-5, t
Acc. IEC 61000-4-5, t
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
= 8/20 µs/single shot I
P
= 8/20 µs/single shot P
P
V
V
T
PPM
PP
ESD
ESD
T
STG
3A
33 W
± 20 kV
± 30 kV
J
- 40 to + 125 °C
- 55 to + 150 °C
Document Number 81249
Rev. 1.1, 11-Apr-08
For technical support, please contact: ESD-Protection@vishay.com
www.vishay.com
1
VESD05A1B-02V
Vishay Semiconductors
BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With
pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as
the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour
is Bi
directional and Asymmetrical (BiAs).
L1
) the protection diode between data line and ground offers a high isolation to the ground
RWM
) is defined by the BReakthrough Voltage (VBR) level
C
) clamps the negative transient close to
F
2
1
Electrical Characteristics
Ratings at 25 °C ambient temperature, unless otherwise specified
VESD05A1B-02V
BiAs mode (between pin 1 and pin 2)
Paramete r Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of lines which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
at V
at V
= 0.1 µA V
R
= 5 V I
at V
R
at I
= 1 mA V
R
= 1 A V
at I
PP
at I
= I
PP
at I
at I
at I
PP
= 0 V; f = 1 MHz C
R
= 2.5 V; f = 1 MHz C
R
= 3 A V
PPM
= 0.2 A V
PP
= 1 A V
PP
= I
= 3 A V
PPM
N
lines
RWM
R
BR
C
C
F
F
F
D
D
20280
1 lines
5V
0.01 0.1 µA
66.87.5V
89.5V
8.9 11 V
0.95 1.2 V
1.3 V
1.9 V
19 23 pF
12 pF
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2
For technical support, please contact: ESD-Protection@vishay.com
Document Number 81249
Rev. 1.1, 11-Apr-08
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
VESD05A1B-02V
Vishay Semiconductors
120 %
100 %
ESD
Discharge Current I
20557
80 %
60 %
53 %
40 %
27 %
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
rise time = 0.7 ns to 1 ns
Time (ns)
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
8 µs to 100 %
20 µs to 50 %
Time (µs)
PPM
I
100 %
80 %
60 %
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
100
10
1
(mA)
F
I
0.1
0.01
0.001
19941
0.5 10.80.70.6
VF (V)
0.9
Figure 4. Typical Forward Current IF vs. Forward Voltage V
8
7
6
5
(V)
4
R
V
3
2
1
19942
0
0.01 1001010.1
IR (µA)
1000
10000
Figure 5. Typical Reverse Voltage VR vs. Reverse Current I
F
R
25
f = 1 MHz
20
15
(pF)
D
C
10
5
0
04321
19940
Figure 3. Typical Capacitance C
Document Number 81249
Rev. 1.1, 11-Apr-08
12
10
8
6
(V)
C
4
/V
F
V
2
0
- 2
- 4
012345
20301
VR (V)
vs. Reverse Voltage V
D
5
R
Figure 6. Typical Clamping Voltage vs. Peak Pulse Current I
For technical support, please contact: ESD-Protection@vishay.com
reverse
Measured acc. IEC 61000-4-5
(8/20 µs - wave form)
forward
IPP (A)
PP
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