VISHAY VEMT2500X01, VEMT2520X01 Technical data
www.vishay.com
16758-10
VEMT2500X01VEMT2520X01
Silicon NPN Phototransistor
DESCRIPTION
VEMT2500X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 15°
• Package matched with IR emitter series
VSMB2000X01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
•Counters
•Encoders
• Position sensors
PRODUCT SUMMARY
COMPONENT Ica (mA) (deg)
VEMT2500X01 6 ± 15 470 to 1090
VEMT2520X01 6 ± 15 470 to 1090
Note
• Test condition see table “Basic Characteristics”
0.1
(nm)
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT2500X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMT2520X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Power power dissipation T
Junction temperature T
Operating temperature range T
Rev. 1.2, 24-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions, contact: detectortechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
= 25 °C, unless otherwise specified)
amb
75 °C P
amb
1
CEO
ECO
C
amb
20 V
7V
50 mA
V
j
100 mW
100 °C
- 40 to + 100 °C
Document Number: 81134
www.vishay.com
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Storage temperature range T
Soldering temperature Acc. reflow profile fig. 8 T
Thermal resistance junction/ambient Acc. J-STD-051 R
120
100
80
60
R
= 250 K/W
thJA
40
- Power Dissipation (mW)
V
20
P
0
0 10203040 50607080 90100
21619
- Ambient Temperature (°C)
T
amb
stg
sd
thJA
- 40 to + 100 °C
260 °C
250 K/W
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
Collector dark current V
Collector emitter capacitance V
E
Collector light current
e
= 0.1 mA V
C
= 5 V, E = 0 I
CE
= 0 V, f = 1 MHz, E = 0 C
CE
= 1 mW/cm2, = 950 nm,
V
= 5 V
CE
CEO
CEO
CEO
I
CA
20 V
1 100 nA
25 pF
369mA
Angle of half sensitivity ± 15 deg
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage I
Temperature coefficient of I
ca
Ee = 1 mW/cm2, = 950 nm,
= 0.05 mA V
C
V
= 5 V
CE
Tk
p
0.1
CEsat
Ica
850 nm
470 to 1090 nm
0.4 V
1.1 %/K
Rev. 1.2, 24-Aug-11
2
Document Number: 81134
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1
10
100
1000
10 000
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
I
CE0
- Collector Dark Current (nA)
IF = 0
VCE = 70 V
V
CE
= 25 V
V
CE
= 5 V
20594
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21555
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
VCE = 5 V
E
e
= 1 mW/cm
2
= 950 nm
VEMT2500X01, VEMT2520X01
Vishay Semiconductors
BASIC CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
10
1
VCE = 5 V,
0.1
- Collector Light Current (mA)
ca
I
0.01
0.01 0.1 1 10
21573
Ee - Irradiance (mW/cm²)
λ = 950 nm
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0°
10° 20°
1.0
0.9
0.8
- Relative Sensitivity
rel
S
0.7
94 8248
0.6
0.20.4
0
30°
40°
50°
60°
70°
ϕ - Angular Displacement
80°
Fig. 3 - Collector Light Current vs. Irradiance
100
90
80
70
60
50
40
30
- Rise/Fall Time (µs)
f
/t
r
t
20
10
Rev. 1.2, 24-Aug-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0
0 250 500 750 1000 1250 1500 1750 2000
20599
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
RL = 100 Ω
t
f
t
r
I
- Collector Current (µA)
C
Fig. 7 - Relative Collector Current vs. Ambient Temperature
3
For technical questions, contact: detectortechsupport@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 81134
Loading...