VISHAY VEMI65AA-HCI Technical data
6-Channel EMI-Filter with ESD-Protection
Features
• Ultra compact LLP2513-13L package
• Low package profile of 0.6 mm
• 6-channel EMI-filter
• Low leakage current
• Line resistance R
• Typical cut off frequency f
= 100 Ω
S
= 100 MHz
3dB
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Lead (Pb)-free component
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
VEMI65AA-HCI
Vishay Semiconductors
20378
1
2
3
4
5
6
12
11
10
13
9
8
7
Marking (example only)
Dot = Pin 1 marking
YYXX
20720
YY = Type code (see table below)
XX = Date code
Ordering Information
Device name Ordering code
VEMI65AA-HCI VEMI65AA-HCI-GS08 3000 15 000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name Package name
VEMI65AA-HCI LLP2513-13L 9P 5.5 mg UL 94 V-0
Marking
code
Weight
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Absolute Maximum Ratings
Para meter Test conditions Symbol Val ue Unit
Peak pulse current
ESD immunity
Operating temperature Junction temperature
Storage temperature
All I/O pin to pin 9; acc. IEC 61000-4-5;
t
= 8/20 µs; single shot
p
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses ± 30
I
V
T
PPM
ESD
T
STG
J
- 40 to + 125 °C
- 55 to + 150 °C
4A
± 30
kV
Document Number 81384
Rev. 1.4, 03-Jun-08
For technical support, please contact: EMI-filter@vishay.com
www.vishay.com
1
VEMI65AA-HCI
Vishay Semiconductors
Application Note:
With the VEMI65AA-HCI 6 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behaviour is Bi
As
ymmetric (BiAs).
L1
L2
L3
L4
L6
OUT
OUT
OUT
OUT
OUT
OUT
20379
L1IN
L2IN
L3IN
L4IN
L5IN L5
L6IN
1
2
3
4
5
6
12
11
10
13
9
8
7
directional and
The 6 independent EMI-Filter are placed between
pin 1 and pin 12,
pin 2 and pin 11,
pin 3 and pin 10,
pin 4 and pin 9,
pin 5 and pin 8 and
pin 6 and pin 7.
They all are connected to a common ground pin 13 on the backside of the package.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C
). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.
D
(Pin 1, 2, 3, 4, 5, 6)
) pass the filter while high frequency signals (f > f
3dB
In
C
D
.
D
between input and output the device works as a low
S
R
S
Out
(Pin 7, 8, 9, 10, 11, 12)
C
D
) and the diode
BR
) will be shorted
3dB
20380
GND
(Pin 13)
Each filter is symmetrical so that both ports can be used as input or output.
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For technical support, please contact: EMI-filter@vishay.com
Document Number 81384
Rev. 1.4, 03-Jun-08
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VEMI65AA-HCI
All inputs (pin 1, 2, 3, 4, 5 and 6) to ground (pin 13)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of channels which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down
voltage
Pos. clamping voltage
at I
= 1 A applied at the input, measured
PP
at the output; acc. IEC 61000-4-5
= I
at I
PP
PPM
= 1 µA V
R
= V
at V
R
RWM
at I
= 1 mA V
R
= 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
at I
= - 1 A applied at the input, measured
PP
Neg. clamping voltage
at the output; acc. IEC 61000-4-5
at I
= I
PP
= - 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at V
= 0 V; f = 1 MHz C
Input capacitance
R
= 2.5 V; f = 1 MHz C
at V
R
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2
Line resistance
Cut-off frequency
Measured between input and output;
I
= 10 mA
S
= 0 V; measured in a 50 Ω system f
V
IN
N
V
channel
RWM
I
R
BR
V
C-out
V
C-out
V
C-out
V
C-out
in
in
CESD
R
S
3dB
VEMI65AA-HCI
Vishay Semiconductors
6 channel
5V
1µA
6V
7V
8V
- 1 V
- 1.2 V
60 pF
36 pF
7.5 V
90 100 110 Ω
100 MHz
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
100 %
ESD
80 %
60 %
53 %
40 %
27 %
Discharge Current I
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
rise time = 0.7 ns to 1 ns
Time (ns)
8 µs to 100 %
20 µs to 50 %
Time (µs)
PPM
I
100 %
80 %
60 %
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number 81384
Rev. 1.4, 03-Jun-08
For technical support, please contact: EMI-filter@vishay.com
www.vishay.com
3
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