VISHAY VEMI45AA-HNH Technical data
4-Channel EMI-Filter with ESD-Protection
Features
• Ultra compact LLP1713-9L package
• Low package profile of 0.6 mm
• 4-channel EMI-filter
• Low leakage current
• Line resistance R
• Typical cut off frequency f
= 100 Ω
S
= 100 MHz
3dB
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Lead (Pb)-free component
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
20522
VEMI45AA-HNH
Vishay Semiconductors
1
2
3
4
8
9
7
6
5
20383
Marking (example only)
Dot = Pin 1 marking
YXX
20719
Y = Type code (see table below)
XX = Date code
Ordering Information
Device name Ordering code
VEMI45AA-HNH VEMI45AA-HNH-GS08 3000 15 000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name Package name Marking code Weight
VEMI45AA-HNH LLP1713-9L A 3.7 mg UL 94 V-0
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Absolute Maximum Ratings
Para meter Test condition Symbol Val ue Unit
Peak pulse current
ESD immunity
Operating temperature Junction temperature T
Storage temperature T
All I/O pin to pin 9; acc. IEC 61000-4-5;
t
= 8/20 µs; single shot
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses ± 30
p
I
V
PPM
ESD
STG
4A
± 30
J
- 40 to + 125 °C
- 55 to + 150 °C
kV
Document Number 81385
Rev. 1.4, 03-Jun-08
For technical support, please contact: EMI-Filter@vishay.com
www.vishay.com
1
VEMI45AA-HNH
Vishay Semiconductors
Application Note:
With the VEMI45AA-HNH 4 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behaviour is Bi
As
ymmetric (BiAs).
L1
L2
L3
L4
OUT
OUT
OUT
OUT
20384
L1
L2
L3
L4
IN
IN
IN
IN
1
2
3
4
8
9
7
6
5
directional and
The 4 independent EMI-filter are placed between
pin 1 and pin 8,
pin 2 and pin 7,
pin 3 and pin 6 and
pin 4 and pin 5.
They all are connected to a common ground pin 9 on the backside of the package.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C
). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.
D
) pass the filter while high frequency signals (f > f
3dB
.
D
In
(Pin 1, 2, 3, 4)
C
D
20385
between input and output the device works as a low
S
R
S
Out
(Pin 5, 6, 7, 8)
C
D
GND
(Pin 9)
) and the diode
BR
) will be shorted
3dB
Each filter is symmetrical so that both ports can be used as input or output.
www.vishay.com
2
For technical support, please contact: EMI-Filter@vishay.com
Document Number 81385
Rev. 1.4, 03-Jun-08
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VEMI45AA-HNH
All inputs (pin 1, 2, 3 and 4) to ground (pin 9)
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Protection paths Number of channels which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down
voltage
Pos. clamping voltage
at I
= 1 A applied at the input, measured
PP
at the output; acc. IEC 61000-4-5
= I
at I
PP
PPM
= 1 µA V
R
= V
at V
R
RWM
at I
= 1 mA V
R
= 4 A applied at the input,
measured at the output; acc. IEC 61000-4-5
at I
= - 1 A applied at the input, measured
PP
Neg. clamping voltage
at the output; acc. IEC 61000-4-5
at I
= I
PP
= - 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at V
= 0 V; f = 1 MHz C
Input capacitance
R
= 2.5 V; f = 1 MHz C
at V
R
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2
Line resistance
Cut-off frequency
Measured between input and output;
I
= 10 mA
S
= 0 V; measured in a 50 Ω system f
V
IN
N
V
channel
RWM
I
R
BR
V
C-out
V
C-out
V
C-out
V
C-out
in
in
CESD
R
S
3dB
VEMI45AA-HNH
Vishay Semiconductors
4 channel
5V
1µA
6V
7V
8V
- 1 V
- 1.2 V
60 pF
36 pF
7.5 V
90 100 110 Ω
100 MHz
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
100 %
ESD
80 %
60 %
53 %
40 %
27 %
Discharge Current I
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
rise time = 0.7 ns to 1 ns
Time (ns)
8 µs to 100 %
20 µs to 50 %
Time (µs)
PPM
I
100 %
80 %
60 %
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number 81385
Rev. 1.4, 03-Jun-08
For technical support, please contact: EMI-Filter@vishay.com
www.vishay.com
3
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