VISHAY VEMI355A-HA3 Technical data

3-Channel EMI-Filter with ESD-Protection

Features

• Ultra compact LLP75-7A package

• 3-channel EMI-filter and ESD-protection

• Low leakage current

• Line resistance of 50 Ω

• Typical cut-off frequency f

= 100 MHz

3dB

• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge

• Lead (Pb)-free component

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

e3

19369

VEMI355A-HA3

Vishay Semiconductors

1

2

3

7

19423

6

5

4

Marking (example only)

XX
YY

21001

Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)

Ordering Information

Device name Ordering code

VEMI355A-HA3 VEMI355A-HA3-GS08 3000 15 000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name Package name Marking code Weight

VEMI355A-HA3 LLP75-7A 9B 5 mg UL 94 V-0

Molding compound

flammability rating

Moisture sensitivity

level

MSL level 1

(according J-STD-020)

Soldering conditions

260 °C/10 s at terminals

Absolute Maximum Ratings

Para meter Test conditions Symbol Val ue Unit

Peak pulse current

ESD immunity

Operating temperature Junction temperature

Storage temperature

All I/O pin to pin 9; acc. IEC 61000-4-5;

t

= 8/20 µs; single shot

p

Contact discharge acc. IEC61000-4-2; 10 pulses

Air discharge acc. IEC61000-4-2; 10 pulses ± 30

T

STG

I

V

T

PPM

ESD

T

STG

4A

± 30

J

- 40 to + 125 °C

- 55 to + 150 °C

kV

Document Number 81714

Rev. 1.1, 03-Jun-08

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VEMI355A-HA3

Vishay Semiconductors

Application Note:

• With the VEMI355A-HA3 3 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behavior is Bi

As

ymmetric (BiAs).

directional and

L1

19424

IN

L2

IN

L3

IN

1

2

3

6

7

5

4

L1

OUT

L2

OUT

L3

OUT

19420

The 3 independent EMI-filter are placed between

pin 1 and pin 6,
pin 2 and pin 5, and
pin 3 and pin 4

They all are connected to a common ground pin. 7 on
the backside of the package.

19421

Each filter is symmetrical so that all ports (pin 1 to 6)
can be used as input or output.

The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C

). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.

D

) pass the filter while high frequency signals (f > f

3dB

.

D

between input and output the device works as a low

S

) and the diode

BR

) will be shorted

3dB

R

S

In

(Pin 1,2,3)

C

D

Out

(Pin 4,5,6)

C

D

GND

21060

(Pin 7)

Each filter is symmetrical so that both ports can be used as input or output.

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Document Number 81714

Rev. 1.1, 03-Jun-08

Electrical Characteristics

Ratings at 25 °C, ambient temperature unless otherwise specified

VEMI355A-HA3

Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit

Filter channels Number of channels which can be protected

at I

Reverse stand off voltage

Reverse current

Reverse break down
voltage

Pos. clamping voltage

at I

at I

= 1 µA each input to pin 2 V

R

= 5 V each input to pin 2 I

at V

R

Each input to pin 2 at I

= 1 A applied at the input, measured

PP

= 1 mA V

R

at the output; acc. IEC 61000-4-5

= I

PP

= 4 A applied at the input,

PPM

measured at the output; acc. IEC 61000-4-5

at I

= - 1 A applied at the input, measured

PP

Neg. clamping voltage

at the output; acc. IEC 61000-4-5

at I

= I

PP

= - 4 A applied at the input,

PPM

measured at the output; acc. IEC 61000-4-5

at V

= 0 V; f = 1 MHz C

Input capacitance

R

= 2.5 V; f = 1 MHz C

at V

R

ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2

Line resistance

Cut-off frequency

Measured between input and output;

I

= 10 mA

S

= 0 V; measured in a 50 Ω system f

V

IN

N

V

channel

RWM

R

BR

V

C-out

V

C-out

V

C-out

V

C-out

IN

IN

CESD

R

S

3dB

VEMI355A-HA3

Vishay Semiconductors

3 channel

5V

1µA

6V

7.8 V

8V

- 1 V

- 1.2 V

60 pF

37 pF

7.5 V

45 50 55 Ω

100 MHz

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

120 %

100 %

ESD

80 %

60 %

53 %

40 %

27 %

Discharge Current I

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

20557

Figure 1. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

rise time = 0.7 ns to 1 ns

Time (ns)

8 µs to 100 %

20 µs to 50 %

Time (µs)

PPM

I

100 %

80 %

60 %

40 %

20 %

0 %

010203040

20548

Figure 2. 8/20 µs Peak Pulse Current Wave Form

acc. IEC 61000-4-5

Document Number 81714

Rev. 1.1, 03-Jun-08

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VEMI355A-HA3

Vishay Semiconductors

100

10

1

(mA)

F

I

0.1

0.01

0.001

0.5 0.6 0.7 0.8 0.9 1

21084

VF (V)

Figure 3. Typical Forward Current IF vs.

Forward Voltage V

8

7

6

5

(V)

IN

4

V

3

2

1

0

10571

Filter output not connected

0.01 0.1 1 10 100 1000 10000

F

IIN (µA)

70

60

50

40

(pF)

IN

30

C

20

10

0

0123 45

19570

VIN (V)

Figure 6. Typical Capacitance CD vs.

Reverse Voltage V

0

- 5

- 10

- 15

- 20

- 25

- 30

Transmission (S21) (dB)

- 35
Measured in a 50 Ω system

- 40

1 10 100 1000 10000

19569

V

INPUT

Frequency (MHz)

R

V

= 0 V

f = 1 MHz

= 5 V

INPUT

Figure 4. Typical Input Voltage VIN vs.

(V)

C

V

19572

Figure 5. Typical Clamping Voltage vs.

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4

Input Current I

12

10

8

6

4

Measured acc. IEC 61000-4-5

2

0

0123456

(8/20 µs - wave form).

Surge pulse applied at the filter input.

IN

VC at Input

VC at Output

IPP (A)

Peak Pulse Current I

PP

For technical support, please contact: [e-mail]

Figure 7. Typical Small Signal Transmission (S21)

at Z

= 50 Ω

0

Document Number 81714

Rev. 1.1, 03-Jun-08

Package Dimensions in millimeters (inches): LLP75-7A

VEMI355A-HA3

Vishay Semiconductors

20459

Document Number 81714

Rev. 1.1, 03-Jun-08

For technical support, please contact: [e-mail]

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VEMI355A-HA3

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number 81714

Rev. 1.1, 03-Jun-08

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1