VISHAY VEMI355A-HA3 Technical data
3-Channel EMI-Filter with ESD-Protection
Features
• Ultra compact LLP75-7A package
• 3-channel EMI-filter and ESD-protection
• Low leakage current
• Line resistance of 50 Ω
• Typical cut-off frequency f
= 100 MHz
3dB
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Lead (Pb)-free component
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
19369
VEMI355A-HA3
Vishay Semiconductors
1
2
3
7
19423
6
5
4
Marking (example only)
XX
YY
21001
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Ordering Information
Device name Ordering code
VEMI355A-HA3 VEMI355A-HA3-GS08 3000 15 000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
Package Data
Device name Package name Marking code Weight
VEMI355A-HA3 LLP75-7A 9B 5 mg UL 94 V-0
Molding compound
flammability rating
Moisture sensitivity
level
MSL level 1
(according J-STD-020)
Soldering conditions
260 °C/10 s at terminals
Absolute Maximum Ratings
Para meter Test conditions Symbol Val ue Unit
Peak pulse current
ESD immunity
Operating temperature Junction temperature
Storage temperature
All I/O pin to pin 9; acc. IEC 61000-4-5;
t
= 8/20 µs; single shot
p
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses ± 30
T
STG
I
V
T
PPM
ESD
T
STG
4A
± 30
J
- 40 to + 125 °C
- 55 to + 150 °C
kV
Document Number 81714
Rev. 1.1, 03-Jun-08
For technical support, please contact: EMI-filter@vishay.com
www.vishay.com
1
VEMI355A-HA3
Vishay Semiconductors
Application Note:
• With the VEMI355A-HA3 3 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behavior is Bi
As
ymmetric (BiAs).
directional and
L1
19424
IN
L2
IN
L3
IN
1
2
3
6
7
5
4
L1
OUT
L2
OUT
L3
OUT
19420
The 3 independent EMI-filter are placed between
pin 1 and pin 6,
pin 2 and pin 5, and
pin 3 and pin 4
They all are connected to a common ground pin. 7 on
the backside of the package.
19421
Each filter is symmetrical so that all ports (pin 1 to 6)
can be used as input or output.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C
). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.
D
) pass the filter while high frequency signals (f > f
3dB
.
D
between input and output the device works as a low
S
) and the diode
BR
) will be shorted
3dB
R
S
In
(Pin 1,2,3)
C
D
Out
(Pin 4,5,6)
C
D
GND
21060
(Pin 7)
Each filter is symmetrical so that both ports can be used as input or output.
www.vishay.com
2
For technical support, please contact: EMI-filter@vishay.com
Document Number 81714
Rev. 1.1, 03-Jun-08
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VEMI355A-HA3
Parameter Test conditions/remarks Symbol Min. Ty p. Max. Unit
Filter channels Number of channels which can be protected
at I
Reverse stand off voltage
Reverse current
Reverse break down
voltage
Pos. clamping voltage
at I
at I
= 1 µA each input to pin 2 V
R
= 5 V each input to pin 2 I
at V
R
Each input to pin 2 at I
= 1 A applied at the input, measured
PP
= 1 mA V
R
at the output; acc. IEC 61000-4-5
= I
PP
= 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at I
= - 1 A applied at the input, measured
PP
Neg. clamping voltage
at the output; acc. IEC 61000-4-5
at I
= I
PP
= - 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at V
= 0 V; f = 1 MHz C
Input capacitance
R
= 2.5 V; f = 1 MHz C
at V
R
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2
Line resistance
Cut-off frequency
Measured between input and output;
I
= 10 mA
S
= 0 V; measured in a 50 Ω system f
V
IN
N
V
channel
RWM
R
BR
V
C-out
V
C-out
V
C-out
V
C-out
IN
IN
CESD
R
S
3dB
VEMI355A-HA3
Vishay Semiconductors
3 channel
5V
1µA
6V
7.8 V
8V
- 1 V
- 1.2 V
60 pF
37 pF
7.5 V
45 50 55 Ω
100 MHz
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
100 %
ESD
80 %
60 %
53 %
40 %
27 %
Discharge Current I
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
rise time = 0.7 ns to 1 ns
Time (ns)
8 µs to 100 %
20 µs to 50 %
Time (µs)
PPM
I
100 %
80 %
60 %
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number 81714
Rev. 1.1, 03-Jun-08
For technical support, please contact: EMI-filter@vishay.com
www.vishay.com
3
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