VISHAY VEMI255A-HS3 Technical data
2-Channel EMI-Filter with ESD-Protection
VEMI255A-HS3
Vishay Semiconductors
Features
• Ultra compact LLP75-6A package
• 2-channel EMI-filter and ESD-protection
• Low leakage current
e3
Top view
1
2
• Line resistance of 50 Ω
• Typical cut-off frequency f
= 100 MHz
3dB
• ESD-protection acc. IEC 61000-4-2
19957
1
3
± 30 kV contact discharge
± 30 kV air discharge
• Lead (Pb)-free component
• "Green" molding compound
• Component in accordance to RoHS 2002/95/EC
and WEEE2002/96/EC
Marking (example only)
XX
YY
21001
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
Ordering Information
Device name Ordering code
VEMI255A-HS3 VEMI255A-HS3-GS08 3000 15 000
VEMI255A-HS3 VEMI255A-HS3-GS18 10 000 10 000
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
6
5
4
19499
Package Data
Device name Package name Marking code Weight
VEMI255A-HS3 LLP75-6A T1 5 mg UL 94 V-0
Molding compound
flammability rating
Moisture sensitivity level Soldering conditions
MSL level 1
(according J-STD-020)
Absolute Maximum Ratings
Parameter Test conditions Symbol Val ue Unit
Peak pulse current
ESD immunity
Operating temperature Junction temperature T
Storage temperature T
Document Number 84772
Rev. 1.5, 03-Jun-08
All I/O pin to pin 9; acc. IEC 61000-4-5;
t
= 8/20 µs; single shot
Contact discharge acc. IEC61000-4-2; 10 pulses
Air discharge acc. IEC61000-4-2; 10 pulses ± 30
For technical support, please contact: EMI-filter@vishay.com
p
I
V
PPM
ESD
STG
260 °C/10 s at terminals
4A
± 30
J
- 40 to + 125 °C
- 55 to + 150 °C
kV
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VEMI255A-HS3
9500
Vishay Semiconductors
Application Note:
a) With the VEMI255A-HS3 2 different signal or data lines can be filtered and clamped to ground. Due to the
different clamping levels in forward and reverse direction the clamping behavior is Bi
As
ymmetric (BiAs).
directional and
L1
IN
L2
IN
1
1
2
3
6
5
4
L1
L2
OUT
OUT
19420
The 2 independent EMI-filter are placed between
pin 1 and pin 6, and
pin 3 and pin 4
They all are connected to the common ground pin 2.
Pin 5 is internally not connected.
Each filter is symmetrical so that all ports (pin 1, 3, 4,
19421
and 6) can be used as input or output.
The circuit diagram of one EMI-filter-channel shows two identical Z-diodes at the input to ground and the output
to ground. These Z-diodes are characterized by the breakthrough voltage level (V
capacitance (C
Together with these capacitors and the line resistance R
pass filter. Low frequency signals (f < f
to ground through the diode capacitances C
). Below the breakthrough voltage level the Z-diodes can be considered as capacitors.
D
) pass the filter while high frequency signals (f > f
3dB
.
D
between input and output the device works as a low
S
) and the diode
BR
) will be shorted
3dB
R
S
In
(Pin 1, 3)
21085
C
D
GND
(Pin 2)
(Pin 4, 6)
C
D
Out
Each filter is symmetrical so that both ports can be used as input or output.
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For technical support, please contact: EMI-filter@vishay.com
Document Number 84772
Rev. 1.5, 03-Jun-08
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VEMI255A-HS3
Parameter Test conditions/remarks Symbol Min. Typ . Max. Unit
Filter channels Number of channels which can be protected
= 1 µA each input to pin 2 V
Reverse stand off voltage
Reverse current
Reverse break down
voltage
Pos. clamping voltage
at I
R
= 5 V each input to pin 2 I
at V
R
Each input to pin 2 at I
at I
= 1 A applied at the input, measured
PP
= 1 mA V
R
at the output; acc. IEC 61000-4-5
at I
= I
PP
= 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at I
= - 1 A applied at the input, measured
PP
Neg. clamping voltage
at the output; acc. IEC 61000-4-5
at I
= I
PP
= - 4 A applied at the input,
PPM
measured at the output; acc. IEC 61000-4-5
at V
= 0 V; f = 1 MHz C
Input capacitance
R
= 2.5 V; f = 1 MHz C
at V
R
ESD-clamping voltage at ± 30 kV ESD-pulse acc. IEC 61000-4-2
Line resistance
Cut-off frequency
Measured between input and output;
I
= 10 mA
S
= 0 V; measured in a 50 Ω system f
V
IN
N
V
channel
RWM
R
BR
V
C-out
V
C-out
V
C-out
V
C-out
IN
IN
CESD
R
S
3dB
VEMI255A-HS3
Vishay Semiconductors
2 channel
5V
1µA
6V
7.8 V
8V
- 1 V
- 1.2 V
60 pF
37 pF
7.5 V
45 50 55 Ω
100 MHz
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
100 %
ESD
80 %
60 %
53 %
40 %
27 %
Discharge Current I
20 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Figure 1. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
rise time = 0.7 ns to 1 ns
Time (ns)
8 µs to 100 %
20 µs to 50 %
Time (µs)
PPM
I
100 %
80 %
60 %
40 %
20 %
0 %
010203040
20548
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Document Number 84772
Rev. 1.5, 03-Jun-08
For technical support, please contact: EMI-filter@vishay.com
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3
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