VISHAY VCUT0714A-02Z Technical data

VCUT0714A-02Z

Vishay Semiconductors

Bidirectional Asymmetrical (BiAs) Single Line ESD-Protection
Diode in SOD923

Features

• Working range - 7 V up to + 14 V or

- 14 V up to + 7 V

• Low leakage current < 0.1 µA

• Low capacitance typ. 8.0 pF

e3

• ESD-immunity acc. IEC 61000-4-2
±

25 kV contact discharge

±

30 kV air discharge

• Tiny SOD923 package

• Package height < 0.4 mm

• Lead (Pb)-free component

• Lead finish = "e3" = matte tin (Sn)

• Nonmagnetic package material

• "Green" molding compound

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

20516-1

1

Circuit Diagram

1

2

20503

Marking (example only)

Bar = Pin 1 marking

XY

20279

X = Date code
Y = Type code (see table below)

Ordering Information

Device name Ordering code

VCUT0714A-02Z VCUT0714A-02Z-GS08 8000 8000

Taped units per reel

(8 mm tape on 7" reel)

Minimum order quantity

Package Data

Device name Package name Type code Weight

VCUT0714A-02Z SOD923 A 0.45 mg UL 94 V-0 260 °C/10 s at terminals

Molding compound

flammability rating

Soldering conditions

Absolute Maximum Ratings

Para meter Test conditions Symbol Valu e Unit

Pin 1 to pin 2

Peak pulse current

Peak pulse power

ESD immunity

Operating temperature Junction temperature

Storage temperature

acc. IEC 61000-4-5, 8/20 µs/single shot

Pin 2 to pin 1

acc. IEC 61000-4-5, 8/20 µs/single shot

Pin 1 to pin 2

acc. IEC 61000-4-5, 8/20 µs/single shot

Pin2 to pin 1

acc. IEC 61000-4-5, 8/20 µs/single shot

Contact discharge acc. IEC61000-4-2; 10 pulses

Air discharge acc. IEC61000-4-2; 10 pulses ± 30

I

I

P

P

V

T

PPM

PPM

PP

PP

ESD

T

STG

- 40 to + 125 °C

j

- 55 to + 150 °C

5A

2A

63 W

54 W

± 25

kV

Document Number 81627

Rev. 1.5, 26-May-08

For technical support, please contact: [e-mail]

www.vishay.com

1

VCUT0714A-02Z

Vishay Semiconductors

Cut the spikes with VCUT0714A-02Z:

The VCUT0714A-02Z is a Bidirectional but Asymmetrical (BiAs) ESD-protection device which clamps positive
and negative overvoltage transients to ground. Connected between the signal or data line and the ground the
VCUT0714A-02Z offers a high isolation (low leakage current, small capacitance) within the specified working
range of - 7 V to + 14 V or - 14 V and + 7 V. Due to the short leads and small package size of the tiny SOD923
package the line inductance is very low, so that fast transients like an ESD-strike can be clamped with minimal
over- or undershoots.

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

VCUT0714A-02Z

(Measured from pin 2 to pin 1)

Paramete r Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected

Reverse stand-off voltage at I = 0.1 µA

Reverse current at V = 14 V

Reverse breakdown voltage at I = 1 mA

= 1 A V

at I

Reverse clamping voltage

Capacitance

PP

at I

= I

PP

at V = 0 V; f = 1 MHz

at V = 7 V; f = 1 MHz

= 2 A V

PPM

N

V

lines

RWM

I

V

C

C

R

BR

1 lines

14 V

0.1 µA

14.5 V

C

C

D

D

88.5pF

4pF

27 V

30 V

VCUT0714A-02Z

(Measured from pin 1 to pin 2)

Paramete r Test conditions/remarks Symbol Min. Ty p. Max. Unit

Protection paths Number of lines which can be protected

Reverse stand-off voltage at I = 0.1 µA

Reverse current at V = 7 V

at

Reverse breakdown voltage

Reverse clamping voltage

Capacitance

at V = 3.5 V; f = 1 MHz

= 1 mA V

2

at I

= 1 A V

PP

at I

= I

PP

at V = 0 V; f = 1 MHz

= 5 A V

PPM

N

V

lines

RWM

I

R

BR

C

C

C

D

C

D

1 lines

7V

0.1 µA

7.3 V

13 V

17 V

88.5pF

6.4 pF

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2

For technical support, please contact: [e-mail]

Document Number 81627

Rev. 1.5, 26-May-08

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

8 µs to 100 %

20 µs to 50 %

I

PPM

100 %

80 %

60 %

40 %

VCUT0714A-02Z

Vishay Semiconductors

25

20

15

(V)

R

V

10

Pin 2 to 1

Pin 1 to 2

20 %

0 %

010203040

20548

Time (µs)

Figure 1. 8/20 µs Peak Pulse Current Wave Form

(acc. IEC 61000-4-5)

120 %

100 %

ESD

Discharge Current I

20557

80 %

60 %

53 %

40 %

27 %

20 %

0 %

- 10 0 10 20 30 40 50 60 70 80 90 100

rise time = 0.7 ns to 1 ns

Time (ns)

Figure 2. ESD Discharge Current Wave Form

acc. IEC 61000-4-2 (330 Ω/150 pF)

5

0

0.01 0.1 1 10 100 1000 10000

(µA)

20577

I

R

Figure 4. Typical Reverse Voltage VR vs. Reverse Current I

35

Pin 2 to 1

V

C

Pin 1 to 2

Measured acc. IEC 61000-4-5
(8/20 µs - wave form)

01234567

IPP (A)

(V)

C

V

20578

30

25

20

15

10

5

0

Figure 5. Typical Peak Clamping Voltage VC vs.

Peak Pulse Current I

PP

R

9

f = 1 MHz

8

(pF)

D

C

20576

7

6

5

4

3

2

1

0

Pin 1 to 2

02468 10 12 14 16

Figure 3. Typical Capacitance C

Reverse Voltage V

Document Number 81627

Rev. 1.5, 26-May-08

80

70

60

50

(V)

Pin 2 to 1

VR (V)

vs.

D

R

40

C-ESD

30

V

20

10

0

- 10

- 10 0 10 20 30 40 50 60 70 8090

20579

Figure 6. Typical Clamping Performance at + 8 kV

Contact Discharge (acc. IEC 61000-4-2)

For technical support, please contact: [e-mail]

acc. IEC 61000-4-2

contact discharge

Pin 1 to 2

t (ns)

+ 8 kV

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3

VCUT0714A-02Z

Vishay Semiconductors

10

0

- 10

- 20

- 30

(V)

- 40

C-ESD

V

- 50

- 60

- 70

- 80

- 10 0 10 20 30 40 50 60 70 8090

20580

Pin 1 to 2

t (ns)

acc. IEC 61000-4-2

- 8 kV

contact discharge

Figure 7. Typical Clamping Performance at - 8 kV

Contact Discharge (acc. IEC 61000-4-2)

Package Dimensions in millimeters (inches): SOD923

180

acc. IEC 61000-4-2

160

contact discharge

140

120

100

(V)

80

C-ESD

V

60

40

20

0

0 5 10 15 20 25 30

20575

V

(kV)

ESD

V

Pin 2 to 1

Pin 1 to 2

C-ESD

Figure 8. Typical Peak Clamping Voltage at ESD

Contact Discharge (acc. IEC 61000-4-2)

5 degree ref

0.13 [0.005]

0.07 [0.003]

0.85 [0.033]

0.75 [0.030]

0.25 [0.010]

0.15 [0.006]

1.1 [0.043]

0.9 [0.035]

Document no.: S8-V-3880.05-001 (4)

Rev. 1 - Date: 05.July.2006

20096

0.65 [0.026]

0.55 [0.022]

0.39 [0.015]

0.37 [0.015]

max. 0.05 [0.002]

foot print recommendation:

0.9 [0.035]

0.35 [0.014]

0.3 [0.012]

max. 0.41 [0.016]

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4

For technical support, please contact: [e-mail]

Document Number 81627

Rev. 1.5, 26-May-08

VCUT0714A-02Z

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or

unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,

and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated

with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number 81627

Rev. 1.5, 26-May-08

For technical support, please contact: [e-mail]

www.vishay.com

5

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1