VISHAY V20120S, VF20120S, VB20120S, VI20120S Technical data
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
®
TMBS
TO-220AB
3
2
V20120S VF20120S
PIN 1
PIN 3
TO-263AB
K
NC
A
1
PIN 2
CASE
A
NC
K
HEATSINK
ITO-220AB
PIN 1
PIN 3
TO-262AA
K
PIN 1
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
at IF = 20 A 0.73 V
F
T
max. 150 °C
J
VI20120SVB20120S
20 A
120 V
200 A
PIN 2
PIN 2
K
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
3
2
1
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB
and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
3
2
1
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT
Maximum repetitive peak reverse voltage V
Maximum average forward rectified current (Fig. 1) I
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
Operating junction ans storage temperature range T
Document Number: 88993
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
120 V
RRM
20 A
F(AV)
I
200 A
FSM
V
AC
, T
- 40 to + 150 °C
J
STG
1500 V
www.vishay.com
1
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
Instantaneous forward voltage
Reverse current
(2)
(1)
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
= 1.0 mA TA = 25 °C V
R
= 5 A
I
F
I
= 10 A
F
I
= 20 A
F
I
= 5 A
F
I
= 10 A
F
I
= 20 A
F
VR = 90 V
V
= 120 V
R
= 25 °C
T
A
= 125 °C
T
A
T
= 25 °C
A
T
= 125 °C
A
T
= 25 °C
A
T
= 125 °C
A
BR
V
F
I
R
120 (minimum) -
0.57
0.71
0.99
0.50
0.61
0.73
10
6
-
14
-
-
1.12
-
-
0.81
-
-
300
30
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT
Typical thermal resistance R
θJC
2422°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20120S-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20120S-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB20120S-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB20120S-E3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI20120S-E3/4W 1.45 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES
= 25 °C unless otherwise noted)
(T
A
25
Resistive or Inductive Load
20
15
10
5
Average Forward Current (A)
0
VF20120S
Mounted on Specific Heatsink
0 25 50 75 100 125 150 175
Case Temperature (°C)
V(B,I)20120S
Figure 1. Maximum Forward Current Derating Curve
20
18
16
14
12
D = 0.1
10
8
6
Average Power Loss (W)
4
2
0
0 5 10 15 20 25
D = 0.3
D = 0.2
Average Forward Current (A)
D = 0.5
D = 0.8
D = tp/T t
Figure 2. Forward Power Loss Characteristics
D = 1.0
T
p
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88993
Revision: 19-May-08
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