Vishay UFL200FA60P Data Sheet
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: Welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
t
rr
I
at TC = 105 °C 200 A
F(AV)
V
R
102 ns
600 V
The UFL200FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping
life-time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
Isolation voltage V
Operating junction and storage temperatures T
J
FSM
ISOL
, T
R
F
D
Stg
TC = 85 °C 144
TC = 25 °C 1000
TC = 85 °C 360 W
Any terminal to case, t = 1 min 2500 V
600 V
A
- 55 to 175 °C
Document Number: 94551 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 600 - -
IF = 100 A - 1.28 1.44
I
= 200 A - 1.48 1.66
F
I
= 100 A, TJ = 125 °C - 1.13 1.24
F
= 200 A - 1.37 1.55
I
F
VR = VR rated - 5 100 μA
T
= 175 °C, VR = VR rated - 0.2 1 mA
J
VR = 600 V - 80 - pF
T
TJ = 25 °C
T
= 125 °C - 210 293
J
TJ = 25 °C - 9 12
T
= 125 °C - 21 25
J
TJ = 25 °C - 443 744
rr
T
= 125 °C - 2086 3355
J
I
= 50 A
F
= 200 V
V
R
/dt = 200 A/μs
dI
F
- 102 141
V
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case,
single leg conducting
Junction to case,
R
thJC
both leg conducting
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
--0.5°C/W
- - 0.25
K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94551
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
Forward Voltage Drop - VF (V)
Instantaneous Forward Current - I
F
(A)
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
Tj = 25°C
Tj = 125°C
Tj = 175°C
Reverse Voltage - VR (V)
Reverse Current - I
R
(μA)
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
25°C
175°C
125°C
UFL200FA60P
Insulated Ultrafast
Rectifier Module, 200 A
10000
(pF)
T
Vishay Semiconductors
Fig. 1 - Typical Values of Reverse Current vs.
1000
Reverse Voltage
T = 25˚C
J
Fig. 1 - Typical Forward Voltage Drop Characteristics
Document Number: 94551 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
100
Junction Capacitance - C
10
10 100 1000
Reverse Voltage - VR (V)
(Per Diode)
Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage
1
(°C/W)
thJC
P
DM
0.1
Thermal Impedance Z
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
t
1
0.01
0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance Z
Characteristics (Per Diode)
thJC
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
t
2
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