Vishay UFB60FA20P Data Sheet

Vishay Semiconductors

Insulated Ultrafast Rectifier Module, 60 A

FEATURES

• Two fully independent diodes

• Ceramic fully insulated package
(V

= 2500 VAC)

ISOL

• Ultrafast reverse recovery

• Ultrasoft reverse recovery current shape

• Low forward voltage

SOT-227

• Optimized for power conversion: welding and industrial
SMPS applications

• Industry standard outline

• Plug-in compatible with other SOT-227 packages

• Easy to assemble

• Direct mounting to heatsink

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

UFB60FA20P

PRODUCT SUMMARY

V

R

at TC = 100 °C 60 A

I

F(AV)

t

rr

200 V

27 ns

DESCRIPTION

The UFB60FA20P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current per diode I

Single pulse forward current per diode I

Maximum power dissipation per module P

RMS isolation voltage V

Operating junction and storage temperatures T

J

FSM

ISOL

, T

R

F

D

Stg

TC = 100 °C 30

TC = 25 °C 250

TC = 100 °C 53 W

Any terminal to case, t = 1 min 2500 V

200 V

A

- 55 to 150 °C

Document Number: 94520 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 [e-mail]

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UFB60FA20P

Vishay Semiconductors

Insulated Ultrafast

Rectifier Module, 60 A

ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

Forward voltage V

Reverse leakage current I

BR

FM

RM

Junction capacitance C

DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

IR = 100 μA 200 - -

IF = 30 A - 0.96 1.08

= 30 A, TJ = 150 °C - 0.78 0.86

I

F

VR = VR rated - - 100 μA

= 150 °C, VR = VR rated - - 1.0 mA

T

J

VR = 200 V - 119 - pF

T

IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 27

= 25 °C

J

T

= 125 °C - 51 -

J

TJ = 25 °C - 2.7 -

T

= 125 °C - 6.8 -

J

= 30 A

I

F

/dt = 200 A/μs

dI

F

= 100 V

V

R

-31-

TJ = 25 °C - 41 -

rr

T

= 125 °C - 174 -

J

V

nsT

A

nC

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case,
single leg conducting

Junction to case,

R

thJC

both leg conducting

Case to heatsink R

thCS

Flat, greased surface - 0.05 -

Weight -30- g

Mounting torque -1.3-Nm

--1.9°C/W

- - 0.95
K/W

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Forward Voltage Drop - VFM (V)

Instantaneous Forward Current - I

F

(A)

1

10

100

1000

0 0.5 1 1.5 2 2.5

Tj = 150˚C

Tj = 125˚C

Tj = 25˚C

Reverse Voltage - V (V)

Junction Capacitance - C

T

( p F )

10

100

1000

1 10 100 1000

Tj = 25˚C

UFB60FA20P

Insulated Ultrafast

Rectifier Module, 60 A

(µA)

R

Reverse Current - I

0.001

Vishay Semiconductors

100

10

1

0.1

0.01

0 50 100 150 200

Reverse Voltage - VR (V)

Fig. 2 - Typical Values of Reverse Current vs.

Tj = 150˚C

125˚C

25˚C

Reverse Voltage

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Document Number: 94520 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 [e-mail]

(Per Diode)

10

(°C/W)

thJC

1

0.1

Thermal Impedance Z

0.01

0.0001 0.001 0.01 0.1 1

Single Pulse

(Thermal Resistance)

t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Maximum Thermal Impedance Z

, [e-mail], [e-mail] 3

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

Characteristics (Per Diode)

thJC

UFB60FA20P

Average Forward Current - I

F(AV)

(A)

Allowable Case Temperature (°C)

80

90

100

110

120

130

140

150

0 5 10 15 20 25 30 35

DC

see note (1)

Square wave (D = 0.50)
Rated Vr applied

Average Power Loss ( W )

Average Forward Current - I

F(AV)

(A)

0

5

10

15

20

25

30

0 5 10 15 20 25 30 35

RMS Limit

D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC

trr ( ns )

dIF/dt (A/µs )

10

20

30

40

50

60

70

0001001

Tj = 125˚C

Tj = 25˚C

If = 30A
Vrr = 100V

Qrr ( nC )

dIF/dt (A/µs )

0

50

100

150

200

250

300

350

400

450

500

550

0001001

Tj = 125˚C

Tj = 25˚C

If = 30A
Vrr = 100V

Vishay Semiconductors

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current (Per Leg)

Insulated Ultrafast

Rectifier Module, 60 A

Fig. 7 - Typical Reverse Recovery Time vs. dI

/dt

F

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

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F(AV)

REV

x VFM at (I

) x R

;

thJC

/D) (see fig. 6);

F(AV)

Fig. 8 - Typical Stored Charge vs. dI

R

/dt

F

, [e-mail], [e-mail] Revision: 21-Jul-10

Q

rr

0.5 I

RRM

dI

(rec)M

/dt

0.75 I

RRM

I

RRM

t

rr

t

b

t

a

I

F

dIF/dt

0

(1)

(2)

(3)

(4)

(5)

(1) dI

F

/dt - rate of change of current

through zero crossing

(2) I

RRM

- peak reverse recovery current

(3) t

rr

- reverse recovery time measured
from zero crossing point of negative
going I

F

to point where a line passing

through 0.75 I

RRM

and 0.50 I

RRM

extrapolated to zero current.

(4) Q

rr

- area under curve dened by t

rr

and I

RRM

trr x I

RRM

2

Q

rr

=

(5) dI

(rec)M

/dt - peak rate of change of

current during t

b

portion of t

rr

UFB60FA20P

Insulated Ultrafast

Rectifier Module, 60 A

= 200 V

V

R

0.01 Ω

L = 70 μH

D.U.T.

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

D

IRFP250

S

Vishay Semiconductors

Document Number: 94520 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 [e-mail]

Fig. 10 - Reverse Recovery Waveform and Definitions

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UFB60FA20P

Vishay Semiconductors

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

UF B 60 F A 20 P

1 - Ultrafast rectifier

2 - Ultrafast Pt diffused

3 - Current rating (60 = 60 A)

4 - Circuit configuration (2 separate diodes, parallel pin-out)

5 - Package indicator (SOT-227 standard isolated base)

6 - Voltage rating (20 = 200 V)

7

Insulated Ultrafast

Rectifier Module, 60 A

- P = Lead (Pb)-free

1

51324

4

67

2

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95036

Packaging information www.vishay.com/doc?95037

3

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6 [e-mail]

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PACKAGING INFORMATION

Packaging Information

Vishay High Power Products

SOT-227

Tube

Quantities per tube is 10
M4 screw and washer included

Document Number: 95037 For technical questions concerning discrete products, contact: [e-mail]
Revision: 04-Jul-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

DIMENSIONS in millimeters (inches)

38.30 (1.508)

37.80 (1.488)

Ø 4.40 (0.173)
Ø 4.20 (0.165)

4 x M4 nuts

-A-

Outline Dimensions

Vishay High Power Products

SOT-227

Chamfer

2.00 (0.079) x 45°

4

12.50 (0.492)

12

7.50 (0.295)

30.20 (1.189)

29.80 (1.173)

2.10 (0.082)

1.90 (0.075)

8.10 (0.319)

4 x

7.70 (0.303)

Notes

• Dimensioning and tolerancing per ANSI Y14.5M-1982

• Controlling dimension: millimeter

3

6.25 (0.246)

15.00 (0.590)

2.10 (0.082)

1.90 (0.075)

25.70 (1.012)

25.20 (0.992)

R full

0.25 (0.010)

-C-

0.12 (0.005)

-B-

MMM

CA B

12.30 (0.484)

11.80 (0.464)

Document Number: 95036 For technical questions concerning discrete products, contact: [e-mail]
Revision: 28-Aug-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1