Vishay UFB60FA20 Data Sheet
Bulletin PD-20778 03/02
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1
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UFB60FA20
Insulated Ultrafast Rectifier Module
Features
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
= 2500V AC)
ISOL
Description
The UFB60FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
t
= 27ns
rr
= 60A
I
F(AV)
= 100°C
@ T
C
VR = 200V
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F
I
FSM
P
D
V
ISOL
TJ, T
Cathode-to-Anode Voltage 200 V
Continuous Forward Current, TC = 100°C Per Diode 30 A
Single Pulse Forward Current, TC = 25°C Per Diode 250
Max. Power Dissipation, TC = 100°C Per Module 53 W
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
www.irf.com
Case Styles
UFB60FA20
SOT-227
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UFB60FA20
Bulletin PD-20778 03/02
Electrical Characteristics @ T
= 25°C (unless otherwise specified) per diode
J
Parameters Min Typ Max Units Test Conditions
V
BR
V
FM
I
RM
C
T
Cathode Anode 200 - - V IR = 100µA
Breakdown Voltage
Forward Voltage - 0.96 1.08 V IF = 30A
- 0.78 0.86 V IF = 30A, TJ = 150°C
Reverse Leakage Current - - 100 µA VR = VR Rated
- - 1.0 mA TJ = 150°C, VR = VR Rated
Junction Capacitance - 119 - pF VR = 200V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Q
rr
Reverse Recovery Time - - 27 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
I
-31- TJ = 25°C
-51- TJ = 125°C
Peak Recovery Current - 2.7 - A TJ = 25°C
- 6.8 - TJ = 125°C
Reverse Recovery Charge - 41 - nC TJ = 25°C
- 174 - TJ = 125°C
= 30A
F
VR = 100V
diF /dt = 200A/µs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thCS
Wt Weight - 30 - g
T Mounting Torque - 1.3 - (N*m)
2 www.irf.com
Junction to Case, Single Leg Conducting - - 1.9 °C/W
Both Leg Conducting - - 0.95 K/W
Case to Heat Sink, Flat, Greased Surface - 0.05 -
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