Vishay UFB200FA40P Data Sheet
Insulated Ultrafast Rectifier Module, 200 A
SOT-227
PRODUCT SUMMARY
V
R
(1)
I
at TC = 87 °C per module 200 A
F(AV)
t
rr
Note
(1)
Maximum I
maximum termperature of terminals
current admitted 100 A to do not exceed the
RMS
400 V
60 ns
UFB200FA40P
Vishay Semiconductors
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The UFB200FA40P insulated modules integrate two state of
the art ultrafast recovery rectifiers in the compact, industry
standard SOT-227 package. The planar structure of the
diodes, and the platinum doping life time control, provide a
ultrasoft recovery current shape, together with the
best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
Note
(1)
Maximum I
Document Number: 94088 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
current admitted 100 A to do not exceed the maximum termperature of terminals
RMS
R
TC = 25 °C 202
= 90 °C 117
C
TC = 25 °C 1300
TC = 90 °C 240 W
Any terminal to case, t = 1 minute 2500 V
Stg
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J
F
FSM
ISOL
, T
(1)
D
400 V
AT
- 55 to 150 °C
UFB200FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 400 - -
IF = 100 A - 1.04 1.24
I
= 100 A, TJ = 150 °C - 0.94 1.00
F
VR = VR rated - - 50 μA
T
= 150 °C, VR = VR rated - - 4 mA
J
VR = 400 V - 100 - pF
T
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 60
= 25 °C
J
= 125 °C - 172 -
T
J
TJ = 25 °C - 10.5 -
T
= 125 °C - 20.2 -
J
= 150 A
I
F
dI
/dt = 200 A/μs
F
V
= 200 V
R
-93-
TJ = 25 °C - 490 -
rr
T
= 125 °C - 1740 -
J
V
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
--0.5
°C/WJunction to case, both leg conducting - - 0.25
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94088
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
0.01
0.1
1
10
100
0 200 300
VR - Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
400100
0.001
1000
1000
10
100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
100
UFB200FA40P
1000
100
TJ = 150 °C
= 125 °C
T
10
1
- Instantaneous Forward Current (A)
F
I
0
0.4 0.8 1.2 1.6
J
= 25 °C
T
J
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Insulated Ultrafast
Rectifier Module, 200 A
Vishay Semiconductors
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Document Number: 94088 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.0001 0.001 0.01 0.1 1
Fig. 4 - Maximum Thermal Impedance Z
t1 - Rectangular Pulse Duration (s)
Characteristics (Per Diode)
thJC
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P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1/t2
t
1
thJC
t
2
.
+ T
C
.
10
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