Bulletin PD-20491 rev. B 02/02
2
1
4
3
UFB200FA20
Insulated Ultrafast Rectifier Module
Features
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
= 2500V AC)
ISOL
Description
The UFB200FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
t
= 45ns
rr
= 240A
I
F(AV)
= 90°C
@ T
C
VR = 200V
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F
I
FSM
P
D
V
ISOL
TJ, T
Cathode-to-Anode Voltage 200 V
Continuous Forward Current, TC = 90°C Per Diode 120 A
Single Pulse Forward Current, TC = 25°C Per Diode 1700
Max. Power Dissipation, TC = 90°C Per Module 240 W
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
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Case Styles
UFB200FA20
SOT-227
1
UFB200FA20
Bulletin PD-20491 rev. C 02/02
Electrical Characteristics @ T
= 25°C (unless otherwise specified) per diode
J
Parameters Min Typ Max Units Test Conditions
V
BR
V
FM
I
RM
C
T
Cathode Anode 200 - - V IR = 100µA
Breakdown Voltage
Forward Voltage - - 1.1 V IF = 120A
- - 0.95 V IF = 120A, TJ = 150°C
Reverse Leakage Current - - 50 µA VR = VR Rated
--2mATJ = 150°C, VR = VR Rated
Junction Capacitance - 200 - pF VR = 200V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Q
rr
Reverse Recovery Time --45 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
I
-34- TJ = 25°C
-58- TJ = 125°C
Peak Recovery Current - 5.1 - A TJ = 25°C
- 10.3 - TJ = 125°C
Reverse Recovery Charge - 87 - nC TJ = 25°C
- 300 - TJ = 125°C
= 150A
F
VR = 160V
diF /dt = 200A/µs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thCS
Wt Weight 30 g
T Mounting Torque 1.3 (N*m)
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Junction to Case, Single Leg Conducting 0.5 °C/W
Both Leg Conducting 0.25 K/W
Case to Heat Sink, Flat, Greased Surface 0.05
UFB200FA20
Bulletin PD-20491 rev. C 02/02
1000
(A)
100
F
10
Instantaneous Forward Current - I
T = 150˚C
J
T = 25˚C
J
1000
Tj = 150˚C
125˚C
(µA)
R
100
10
1
0.1
Reverse Current - I
0.01
25˚C
0.001
0 100 200 300 400
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
(pF)
T
T = 25˚C
J
1000
1
0.2 0.4 0.6 0.8 1 1.2 1.4
Forward Voltage Drop - VF (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
1
(°C/W)
thJC
0.1
Single Pulse
(Thermal Resistance)
Thermal Impedance Z
0.01
0.0001 0.001 0.01 0.1 1 10
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
100
1 10 100 1000
Fig. 3 - Typical Junction Capacitance
P
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics (per diode)
thJC
Reverse Voltage - VR (V)
Vs. Reverse Voltage
DM
t
1
t
2
3
UFB200FA20
Bulletin PD-20491 rev. C 02/02
150
140
130
120
DC
110
100
Square wave (D = 0.50)
Rated Vr applied
90
80
Allowable Case Temperature (°C)
see note (3)
70
0 20 40 60 80 100 120 140 160
Average Forward Current - I
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per leg)
70
IF = 150A
60
IF = 75A
50
40
trr ( ns )
F(AV)
(A)
150
120
RMS Limit
90
D = 0.01
60
D = 0.02
D = 0.05
D = 0.10
30
Average Power Loss ( W )
0
D = 0.20
D = 0.50
DC
0 20 40 60 80 100 120 140 160
Average Forward Current - I
Fig. 6 - Forward Power Loss Characteristics
(per leg)
900
Vr = 160V
800
Tj = 125˚C
Tj = 25˚C
700
600
IF = 150A
IF = 75A
500
400
Qrr ( nC )
F(AV)
(A)
30
300
200
Vr = 160V
20
Tj = 125˚C
Tj = 25˚C
10
100 1000
di
F
/dt (A/µs )
Fig. 7 - Typical Reverse Recovery time vs. di
(3) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
F(AV)
) x R
REV
x VFM @ (I
;
thJC
/ D) (see Fig. 6);
F(AV)
/dt
F
= 80% rated V
R1
R
100
0
100 1000
di F /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
F
4 www.irf.com
/dt
dif/dt
ADJUST
L = 70µH
G
V = 200V
R
0.01
D
IRFP250
S
UFB200FA20
Bulletin PD-20491 rev. C 02/02
3
t
I
F
0
Ω
D.U.T.
1. diF/dt - Rate of change of current through
zero crossing
2. I
- Peak reverse recovery current
RRM
- Reverse recovery time measured from
3. t
rr
zero crossing point of negative going I
point where a line passing through 0.75 I
and 0.50 I
extrapolated to zero current
RRM
1
di /dt
f
rr
t
a
to
F
RRM
t
b
2
I
RRM
di(rec)M/dt
0.75
I
RRM
4. Qrr - Area under curve defined by
t rr and I
5. di
/ dt - Peak rate of change
(rec) M
of current during t b portion of t
0.5
RRM
4
Q
rr
I
RRM
5
t rr x I
RRM
Q
=
rr
2
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
SOT-227 Package Details
Notes:
Fig. 10 - Reverse Recovery Waveform and
Definitions
LEAD ASSIGNMENTS
FRED
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
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5
UFB200FA20
Bulletin PD-20491 rev. C 02/02
SOT-227 Package Details
Tube
QUANTITY PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED
Ordering Information Table
Device Code
UF B 200 F A 20
1
1 - ULTRAFAST RECTIFIER
2 - Ultrafast Pt diffused
3 - Current Rating (200 = 200A)
4 - Circuit Configuration (2 separate Diodes, parallel pin-out)
5 - Package Indicator (SOT-227 Standard Isolated Base)
6 - Voltage Rating (20 = 200V)
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
524
63
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
Visit us at www.irf.com for sales contact information. 02/02
TAC Fax: (310) 252-7309
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