Vishay UFB120FA40P Data Sheet
UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
V
R
at TC = 65 °C 120 A
I
F(AV)
t
rr
400 V
35 ns
The UFB120FA40P insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The planar structure
of the diodes, and the platinum doping life time control,
provide a ultrasoft recovery current shape, together with
the best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
J
FSM
ISOL
, T
R
F
D
Stg
TC = 65 °C 60
TC = 25 °C 800
TC = 90 °C 96 W
Any terminal to case, t = 1 minute 2500 V
400 V
A
- 55 to 150 °C °C
Document Number: 94086 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 400 - -
IF = 60 A - 1.16 1.37
I
= 60 A, TJ = 150 °C - 0.96 1.13
F
VR = VR rated - - 0.1
T
= 150 °C, VR = VR rated - - 1
J
VR = 400 V - 67 - pF
T
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 30 35
= 25 °C
J
T
= 125 °C - 128 -
J
TJ = 25 °C - 7.4 -
T
= 125 °C - 17.8 -
J
TJ = 25 °C - 240 -
rr
T
= 125 °C - 1139 -
J
I
= 50 A
F
/dt = 200 A/μs
dI
F
= 200 V
V
R
-65-
V
mA
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single diode conducting
Case to heatsink R
R
thJC
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
- 0.99 1.24
°C/WJunction to case, both diodes conducting - 0.49 0.62
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94086
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
1
10
TJ = 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1000
0.5 1.0 1.5
2.0
100
1 10 100 1000
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
1000
0.01
0.1
10
0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1/t2
2. Peak TJ = PDM x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
10
UFB120FA40P
Insulated Ultrafast
Rectifier Module, 120 A
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
Vishay Semiconductors
100
TJ = 150 °C
10
1
0.1
- Reverse Current (µA)
0.01
R
I
0.001
0 200 300
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
TJ = 125 °C
TJ = 25 °C
Reverse Voltage
400100
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Document Number: 94086 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
Fig. 4 - Maximum Thermal Impedance Z
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
(Per Diode)
thJC
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