Vishay UFB120FA40 Data Sheet
Bulletin PD-20488 12/01
2
1
4
3
UFB120FA40
Insulated Ultrafast Rectifier Module
Features
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
= 2500V AC)
ISOL
Description
The UFB120FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
t
= 35ns
rr
= 120A
I
F(AV)
@ TC = 65°C
= 400V
V
R
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F
I
FSM
P
D
V
ISOL
TJ, T
Cathode-to-Anode Voltage 400 V
Continuous Forward Current, TC = 65°C Per Diode 60 A
Single Pulse Forward Current, TC = 25°C Per Diode 800
Max. Power Dissipation, TC @ 90°C Per Module 96 W
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
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Case Styles
UFB120FA40
SOT-227
1
UFB120FA40
Bulletin PD-20488 12/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
V
BR
V
FM
I
RM
C
T
Cathode Anode 400 - - V IR = 100µA
Breakdown Voltage
Forward Voltage - 1.16 1.37 V IF = 60A
- 0.96 1.13 V IF = 60A, TJ = 150°C
Reverse Leakage Current - - 0.1 mA VR = VR Rated
--1mATJ = 150°C, VR = VR Rated
Junction Capacitance - 67 - pF VR = 400V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Reverse Recovery Time - 30 35 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
I
-65- TJ = 25°C
- 128 - TJ = 125°C
= 50A
F
VR = 200V
diF /dt = 200A/µs
Peak Recovery Current - 7.4 - A TJ = 25°C
- 17.8 - TJ = 125°C
Q
Reverse Recovery Charge - 240 - nC TJ = 25°C
rr
- 1139 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thCS
Wt Weight - 30 - g
T Mounting Torque - 1.3 - (N*m)
Junction to Case Single Diode Conducting - 0.99 1.24 °C/W
Both Diodes Conducting - 0.49 0.62 °C/W
Case to Heat Sink, Flat, Greased Surface - 0.05 -
2
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