Vishay UFB120FA40 Data Sheet

Bulletin PD-20488 12/01

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1

4

3

UFB120FA40

Insulated Ultrafast Rectifier Module

Features

• Two Fully Independent Diodes

• Ceramic Fully Insulated Package (V

• Ultrafast Reverse Recovery

• Ultrasoft Reverse Recovery Current Shape

• Low Forward Voltage

• Optimized for Power Conversion: Welding and Industrial SMPS Applications

• Industry Standard Outline

• Plug-in Compatible with other SOT-227 Packages

• Easy to Assemble

• Direct Mounting to Heatsink

= 2500V AC)

ISOL

Description

The UFB120FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life­time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC­DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.

t

= 35ns

rr

= 120A

I

F(AV)

@ TC = 65°C

= 400V

V

R

Absolute Maximum Ratings

Parameters Max Units

V

R

I

F

I

FSM

P

D

V

ISOL

TJ, T

Cathode-to-Anode Voltage 400 V

Continuous Forward Current, TC = 65°C Per Diode 60 A

Single Pulse Forward Current, TC = 25°C Per Diode 800

Max. Power Dissipation, TC @ 90°C Per Module 96 W

RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V

Operating Junction and Storage Temperatures - 55 to 150 °C

STG

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Case Styles

UFB120FA40

SOT-227

1

UFB120FA40

Bulletin PD-20488 12/01

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode

Parameters Min Typ Max Units Test Conditions

V

BR

V

FM

I

RM

C

T

Cathode Anode 400 - - V IR = 100µA
Breakdown Voltage

Forward Voltage - 1.16 1.37 V IF = 60A

- 0.96 1.13 V IF = 60A, TJ = 150°C

Reverse Leakage Current - - 0.1 mA VR = VR Rated

--1mATJ = 150°C, VR = VR Rated

Junction Capacitance - 67 - pF VR = 400V

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode

Parameters Min Typ Max Units Test Conditions

t

rr

I

RRM

Reverse Recovery Time - 30 35 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V

I

-65- TJ = 25°C

- 128 - TJ = 125°C

= 50A

F

VR = 200V

diF /dt = 200A/µs

Peak Recovery Current - 7.4 - A TJ = 25°C

- 17.8 - TJ = 125°C

Q

Reverse Recovery Charge - 240 - nC TJ = 25°C

rr

- 1139 - TJ = 125°C

Thermal - Mechanical Characteristics

Parameters Min Typ Max Units

R

thJC

R

thCS

Wt Weight - 30 - g

T Mounting Torque - 1.3 - (N*m)

Junction to Case Single Diode Conducting - 0.99 1.24 °C/W

Both Diodes Conducting - 0.49 0.62 °C/W

Case to Heat Sink, Flat, Greased Surface - 0.05 -

2

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UFB120FA40

Bulletin PD-20488 12/01

1000

100

(A)

F

10

Instantaneous Forward Current - I

Tj = 150˚C
Tj = 125˚C
Tj = 25˚C

100

Tj = 150˚C

10

(µA)

R

1

0.1

Reverse Current - I

0.01

0.001
0 100 200 300 400

Reverse Voltage - VR (V)

Fig. 2 - Typical Values Of Reverse Current

Vs. Reverse Voltage

1000

(pF)

T

100

125˚C

25˚C

1

0 0.5 1 1.5 2

Forward Voltage Drop - VFM (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

(per diode)

Single Pulse

(Thermal Impedance)

(°C/W)

thJC

10

1

0.1

Thermal Impedance Z

0.01

0.0001 0.001 0.01 0.1 1 10

t 1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance Z

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Junction Capacitance - C

Tj = 25˚C

10

1 10 100 1000

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

(per diode)

thJC

3

UFB120FA40

Bulletin PD-20488 12/01

160
140
120

DC

100

80

Square wave (D = 0.50)
80% Rated Vr applied

60
40

see note (3)

Allowable Case Temperature (°C)

20

0 10203040506070

Average Forward Current - I

F(AV)

Fig. 5 - Max. Allowable Case Temperature

Vs. Average Forward Current (per diode)

160
150

If = 50A
Vrr = 200V

140
130

Tj = 125˚C

120
110
100

trr ( ns )

90
80
70

Tj = 25˚C

60
50

100 1000

di

F

/dt (A/µs )

Fig. 7 - Typical Reverse Recovery time vs. di

(A)

70

RMS Limit

60
50

DC

40
30
20

Average Power Loss ( Watts )

10

0

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

0 10203040506070

Average Forward Current - I

F(AV)

(A)

Fig. 6 - Forward Power Loss (per diode)

3050

If = 50A

2550

2050

Vrr = 200V

Tj = 125˚C

1550

Qrr ( nC )

1050

550

50

100 1000

/dt

F

Fig. 8 - Typical Stored Charge vs. di

Tj = 25˚C

di F /dt (A/µs )

/dt

F

(3) Formula used: TC = TJ - (Pd + Pd

Pd = Forward Power Loss = I

Pd

= Inverse Power Loss = VR1 x IR (1 - D); IR @ V

REV

F(AV)

4

) x R

REV

x VFM @ (I

;

thJC

/ D) (see Fig. 6);

F(AV)

= 80% rated V

R1

R

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dif/dt
ADJUST

L = 70µH

G

V = 200V

R

0.01

D

IRFP250

S

UFB120FA40

Bulletin PD-20488 12/01

3

t

I

F

0

Ω

D.U.T.

1. diF/dt - Rate of change of current through
zero crossing

2. I

- Peak reverse recovery current

RRM

- Reverse recovery time measured from

3. t

rr

zero crossing point of negative going I
point where a line passing through 0.75 I
and 0.50 I

extrapolated to zero current

RRM

1

di /dt

f

rr

t

a

to

F

RRM

t

b

2

I

0.5

RRM

di(rec)M/dt

0.75

I

RRM

4. Qrr - Area under curve defined by
t rr and I

RRM

5. di

/ dt - Peak rate of change

(rec) M

of current during t b portion of t

4

Q

rr

I

RRM

5

t rr x I

RRM

Q

=

rr

2

rr

Fig. 1 - Reverse Recovery Parameter Test

Circuit

SOT-227 Package Details

Notes:

1. Dimensioning & tolerancing per ANSI Y14.5M-1982.

2. Controlling dimension: millimeter.

3. Dimensions are shown in millimeters (inches).

Fig. 2 - Reverse Recovery Waveform and

Definitions

LEAD ASSIGNMENTS

FRED

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UFB120FA40

Bulletin PD-20488 12/01

SOT-227 Package Details

Tube

QUANTITIES PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED

Ordering Information Table

Device Code

UF B 120 F A 40

24

1 5

1 - ULTRAFAST RECTIFIER

2 - Ultrafst Pt diffused

3 - Current Rating (120 = 120A)

4 - Circuit Configuration (2 separate Diodes, parallel pin-out)

5 - Package Indicator (SOT-227 Standard Isolated Base)

6 - Voltage Rating (40 = 400V)

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

Visit us at www.irf.com for sales contact information. 12/01

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TAC Fax: [phone]

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