Vishay UFB120FA20P Data Sheet
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
= 2500 VAC)
ISOL
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
V
R
at TC = 90 °C 120 A
I
F(AV)
t
rr
200 V
28 ns
DESCRIPTION
The UFB120FA20P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping life
time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current per diode I
Single pulse forward current per diode I
Maximum power dissipation per module P
RMS isolation voltage V
Operating junction and storage temperatures T
J
FSM
ISOL
, T
R
F
D
Stg
TC = 90 °C 60
TC = 25 °C 850
TC = 90 °C 110 W
Any terminal to case, t = 1 min 2500 V
200 V
A
- 55 to 150 °C
Document Number: 94522 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
UFB120FA20P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Forward voltage V
Reverse leakage current I
BR
FM
RM
Junction capacitance C
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
IR = 100 μA 200 - -
IF = 60 A - 0.96 1.13
= 60 A, TJ = 150 °C - 0.79 0.90
I
F
VR = VR rated - - 100 μA
= 150 °C, VR = VR rated - - 1.0 mA
T
J
VR = 200 V - 105 - pF
T
IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - - 28
= 25 °C
J
T
= 125 °C - 64 -
J
TJ = 25 °C - 4.0 -
T
= 125 °C - 8.2 -
J
= 50 A
I
F
/dt = 200 A/μs
dI
F
= 100 V
V
R
-32-
TJ = 25 °C - 64 -
rr
T
= 125 °C - 263 -
J
V
nsT
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case,
single diode conducting
Junction to case,
R
thJC
both diodes conducting
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30- g
Mounting torque -1.3-Nm
-0.81.1
- 0.4 0.55
K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94522
2 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 21-Jul-10
Forward Voltage Drop - VFM (V)
Instantaneous Forward Current - I
F
(A)
1
10
100
1000
0.2 0.6 1 1.4 1.8
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
Reverse Voltage - VR (V)
Reverse Current - I
R
(µA)
0.001
0.01
0.1
1
10
100
050100150200
125˚C
25˚C
Tj = 150˚C
t1, Rectangular Pulse Duration (Seconds)
Thermal Impedance Z
thJC
(°C/W)
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Single Pulse
(Thermal Impedance)
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
UFB120FA20P
Insulated Ultrafast
Rectifier Module, 120 A
Fig. 2 - Typical Values of Reverse Current vs.
1000
( p F )
T
Vishay Semiconductors
Reverse Voltage
Tj = 25˚C
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 94522 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 21-Jul-10 DiodesAmericas@vishay.com
Junction Capacitance - C
100
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
(Per Diode)
thJC
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