Vishay UFB120FA20 Data Sheet
Features
Description
t
rr
= 28ns
I
F(AV)
= 120A
@ T
C
= 90°C
V
R
= 200V
1
UFB120FA20
Bulletin PD-20487 12/01
Insulated Ultrafast Rectifier Module
V
R
Cathode-to-Anode Voltage 200 V
I
F
Continuous Forward Current, T
C
= 90°C Per Diode 60 A
I
FSM
Single Pulse Forward Current, T
C
= 25°C Per Diode 850
P
D
Max. Power Dissipation, T
C
= 90°C Per Module 110 W
V
ISOL
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
T
J
,
T
STG
Operating Junction and Storage Temperatures - 55 to 150 °C
Parameters Max Units
Absolute Maximum Ratings
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
ISOL
= 2500V AC)
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-
time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
Case Styles
UFB120FA20
SOT-227
www.irf.com
2
1
4
3
UFB120FA20
Bulletin PD-20487 12/01
2
www.irf.com
V
BR
Cathode Anode 200 - - V I
R
= 100µA
Breakdown Voltage
V
FM
Forward Voltage - 0.96 1.13 V I
F
= 60A
- 0.79 0.90 V I
F
= 60A, T
J
= 150°C
I
RM
Reverse Leakage Current - - 100 µA V
R
= V
R
Rated
- - 1.0 mA T
J
= 150°C, V
R
= V
R
Rated
C
T
Junction Capacitance - 105 - pF V
R
= 200V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
R
thJC
Junction to Case Single Diode Conducting - 0.8 1.1 K/W
Both Diodes Conducting - 0.4 0.55
R
thCS
Case to Heat Sink, Flat, Greased Surface - 0.05 -
Wt Weight - 30 - g
T Mounting Torque - 1.3 - (N*m)
Parameters Min Typ Max Units
Thermal - Mechanical Characteristics
t
rr
Reverse Recovery Time - - 28 ns I
F
= 1.0A, di
F
/dt = 200A/µs, V
R
= 30V
-32- T
J
= 25°C
-64- T
J
= 125°C
I
RRM
Peak Recovery Current - 4.0 - A T
J
= 25°C
- 8.2 - T
J
= 125°C
Q
rr
Reverse Recovery Charge - 64 - nC T
J
= 25°C
- 263 - T
J
= 125°C
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
I
F
= 50A
V
R
= 100V
di
F
/dt = 200A/µs
Parameters Min Typ Max Units Test Conditions
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