Bulletin PD-20487 12/01
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1
4
3
UFB120FA20
Insulated Ultrafast Rectifier Module
Features
• Two Fully Independent Diodes
• Ceramic Fully Insulated Package (V
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Industry Standard Outline
• Plug-in Compatible with other SOT-227 Packages
• Easy to Assemble
• Direct Mounting to Heatsink
= 2500V AC)
ISOL
Description
The UFB120FA20 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DCDC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
t
I
F(AV)
@ T
V
= 28ns
rr
= 120A
= 90°C
C
= 200V
R
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F
I
FSM
P
D
V
ISOL
TJ, T
Cathode-to-Anode Voltage 200 V
Continuous Forward Current, TC = 90°C Per Diode 60 A
Single Pulse Forward Current, TC = 25°C Per Diode 850
Max. Power Dissipation, TC = 90°C Per Module 110 W
RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V
Operating Junction and Storage Temperatures - 55 to 150 °C
STG
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Case Styles
UFB120FA20
SOT-227
1
UFB120FA20
Bulletin PD-20487 12/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
V
BR
V
FM
I
RM
C
T
Cathode Anode 200 - - V IR = 100µA
Breakdown Voltage
Forward Voltage - 0.96 1.13 V IF = 60A
- 0.79 0.90 V IF = 60A, TJ = 150°C
Reverse Leakage Current - - 100 µA VR = VR Rated
- - 1.0 mA TJ = 150°C, VR = VR Rated
Junction Capacitance - 105 - pF VR = 200V
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) per diode
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Reverse Recovery Time - - 28 ns IF = 1.0A, diF/dt = 200A/µs, VR = 30V
I
-32- TJ = 25°C
-64- TJ = 125°C
= 50A
F
VR = 100V
diF /dt = 200A/µs
Peak Recovery Current - 4.0 - A TJ = 25°C
- 8.2 - TJ = 125°C
Q
Reverse Recovery Charge - 64 - nC TJ = 25°C
rr
- 263 - TJ = 125°C
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thCS
Wt Weight - 30 - g
T Mounting Torque - 1.3 - (N*m)
Junction to Case Single Diode Conducting - 0.8 1.1 K/W
Both Diodes Conducting - 0.4 0.55
Case to Heat Sink, Flat, Greased Surface - 0.05 -
2
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UFB120FA20
Bulletin PD-20487 12/01
1000
(A)
100
F
10
Instantaneous Forward Current - I
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
100
Tj = 150˚C
10
(µA)
R
1
0.1
Reverse Current - I
0.01
0.001
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
Tj = 25˚C
(pF)
T
125˚C
25˚C
1
0.2 0.6 1 1.4 1.8
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
10
(°C/W)
thJC
1
Single Pulse
(Thermal Impedance)
0.1
Thermal Impedance Z
0.01
0.001 0.01 0.1 1 10
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
100
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
(per diode)
thJC
3
UFB120FA20
Bulletin PD-20487 12/01
150
140
130
120
DC
110
Square wave (D = 0.50)
100
80% Rated Vr applied
90
see note (3)
Allowable Case Temperature (°C)
80
0 10203040506070
Average Forward Current - I
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per diode)
80
If = 50A
Vrr = 200V
70
60
Tj = 125˚C
50
F(AV)
(A)
60
50
RMS Limit
40
30
20
10
Average Power Loss ( Watts )
0
0 10203040506070
Average Forward Current - I
Fig. 6 - Forward Power Loss (per diode)
800
If = 50A
700
Vrr = 200V
600
500
Tj = 125˚C
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
F(AV)
(A)
40
trr ( ns )
Tj = 25˚C
30
20
10
0
100 1000
(3) Formula used: TC = TJ - (Pd + Pd
Pd = Forward Power Loss = I
Pd
= Inverse Power Loss = VR1 x IR (1 - D); IR @ V
REV
diF /dt (A/µs )
F(AV)
4
) x R
REV
x VFM @ (I
;
thJC
/ D) (see Fig. 6);
F(AV)
/dt
F
= 80% rated V
R1
R
400
Qrr ( nC )
300
200
100
0
100 1000
Tj = 25˚C
diF /dt (A/µs )
Fig. 8 - Typical Stored Charge vs. di
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/dtFig. 7 - Typical Reverse Recovery time vs. di
F
dif/dt
ADJUST
L = 70µH
G
V = 200V
R
0.01
D
IRFP250
S
UFB120FA20
Bulletin PD-20487 12/01
3
t
I
F
0
Ω
D.U.T.
1. diF/dt - Rate of change of current through
zero crossing
2. I
- Peak reverse recovery current
RRM
- Reverse recovery time measured from
3. t
rr
zero crossing point of negative going I
point where a line passing through 0.75 I
and 0.50 I
extrapolated to zero current
RRM
1
di /dt
f
rr
t
a
to
F
RRM
t
b
2
I
RRM
di(rec)M/dt
0.75
I
RRM
4. Qrr - Area under curve defined by
t rr and I
5. di
/ dt - Peak rate of change
(rec) M
of current during t b portion of t
0.5
RRM
4
Q
rr
I
RRM
5
t rr x I
RRM
Q
=
rr
2
rr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
SOT-227 Package Details
Notes:
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
Fig. 10 - Reverse Recovery Waveform and Definitions
LEAD ASSIGNMENTS
FRED
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5
UFB120FA20
Bulletin PD-20487 12/01
SOT-227 Package Details
Tube
QUANTITIES PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED
Ordering Information Table
Device Code
UF B 120 F A 20
24
1 5
1 - ULTRAFAST RECTIFIER
2 - Ultrafast Pt diffused
3 - Current Rating (120 = 120A)
4 - Circuit Configuration (2 separate Diodes, parallel pin-out)
5 - Package Indicator (SOT-227 Standard Isolated Base)
6 - Voltage Rating (20 = 200V)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
3
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
Visit us at www.irf.com for sales contact information. 12/01
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TAC Fax: (310) 252-7309
6
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