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U5196NL
Datasheet (Vishay) [ru]
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Datasheet SST5198NL, SST5199NL, U5196NL, U5197NL, U5198NL Datasheet (Vishay) [ru]

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SST/U5196NL Series
New Product
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number V
U5196NL -0.7 to -4 -50 1 -15 5
U5197NL -0.7 to -4 -50 1 -15 5 SST/U5198NL -0.7 to -4 -50 1 -15 10 SST/U5199NL -0.7 to -4 -50 1 -15 15
FEATURES BENEFITS APPLICATIONS
D Anti Latchup Capability D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise D High CMRR: 100 dB
GS(off)
(V) V
(BR)GSS
Min (V) gfs Min (mS) IG Max (pA) V
D External Substrate Bias—Avoids Latchup D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accuracy D Minimum Input Error/Trimming Requirement D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal
U5196NL U5197NL
- V
GS1
D Wideband Differential Amps D High-Speed, Temp-Compensated,
D High Speed Comparators D Impedance Converters
Max (mV)
GS2
Single-Ended Input Amps
U5198NL U5199NL
DESCRIPTION
The SST/U5196NL series of JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.
Pins 4 and 8 of the SST series and pin 4 on the U series part numbers enable the substrate to be connected to a positive, external bias (V
SUBSTRATE S
) to avoid latchup.
DD
Narrow Body SOIC
S
1
1
D
2
1
G
3
1
4
Marking Codes:
SST5198NL - 5198NL SST5199NL - 5199NL
Top View
8 7 6 5
SUBSTRATE G
2
D
2
2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage -50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300 _C. . . . . . . . . . . . . . . . . .
Storage Temperature -65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
The U series in the hermetically-sealed TO-78 package is available with full military processing. The SST series SO-8 package provides ease of manufacturing and the symmetrical pinout prevents improper orientation. The SO-8 package is available with tape-and-reel options for compatibility with automatic assembly methods.
For similar products see the low-noise SST/U401NL series and the low-leakage U421NL/423NL data sheets.
TO-78
TO-78
S
S
1
1
1
1
D
D
1
1
2
2
3
3
G
G
1
1
Power Dissipation : Per Side
Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C
4
4
CASE, SUBSTRATE
CASE, SUBSTRATE
Top View U5196NL, U5198NL U5197NL, U5199NL
G
G
2
2
7
7
D
D
2
2
6
6
5
5
S
S
2
2
Total
a
b
250 mW. . . . . . . . . . . . . . . . . . . . . . . .
500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Document Number: 72156 S-03468—Rev. B, 11-Mar-03
www.vishay.com
7-1
SST/U5196NL Series
VDS = 20 V, VGS = 0 V
S
VDS = 20 V, ID = 200 A
VDS = 20 V, VGS = 0 V
S
VDS = 20 V, ID = 200 A
Vishay Siliconix
New Product
SPECIFICATIONS FOR U5196NL AND U5197NL (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
U5196NL U5197NL
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V Gate-Source Cutoff Voltage V Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Gate-Source Voltage V
b
(BR)GSS
GS(off)
I
DSS
GSS
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Equivalent Input Noise Voltage e
Noise Figure NF
g
g
g
g
C
C
Matching
Differential Gate-Source Voltage
Gate-Source Voltage Differential Change with Temperature
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
|
V
GS1–VGS2
|
V
GS1–VGS2
|
g
os1–gos2
T
I
DSS1
I
DSS2
g g
fs1 fs2
GS
IG = -1 A, VDS = 0 V VDS = 20 V, ID = 1 nA -2 -0.7 -4 -0.7 -4
VDS = 20 V, VGS = 0 V 3 0.7
VGS = -30 V, VDS = 0 V -10 -25 -25 pA
TA = 150_C
G
fs
os
fs
os
iss
rss
n
|
|
|
VDG = 20 V, ID = 200 A
TA = 125_C
VDG = 20 V, ID = 200 A
VDS = 20 V, VGS = 0 V
f = 1 kHz
V
= 20 V, ID = 200 A
D
f = 1 kHz
VDS = 20 V, VGS = 0 V
f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 kHz 11 20 20
VDS = 20 V, VGS = 0 V
f = 100 Hz, R
VDG = 20 V, ID = 200 A
VDG = 20 V, ID = 200 A
T
A
VDS = 20 V, VGS = 0 V 0.98 0.95 1 0.95 1
V
= 20 V, ID = 200 A
D
= 10 M
G
= -55 to 125_C
f = 1 kHz
-57 -50 -50
0.7
7
-20 -50 -50 nA
-5 -15 -15 pA
-0.8 -15 -15 nA
-1.5 -0.2 -3.8 -0.2 -3.8 V
3.0 1 4 1 4 mS
8 50 50
0.8 0.7 1.6 0.7 1.6 mS
1 4 4
3 6 6
1 2 2
0.5 0.5 dB
5 5 mV
5 10
0.99 0.97 1 0.97 1
0.1 1 1
7
V
mA
S
S
pF
nV⁄
√Hz
V/_C
S
Differential Gate Current
Common Mode Rejection Ratio CMRR
www.vishay.com
7-2
|
|
I
* I
G1
G2
VDG = 20 V, ID = 200 A , TA = 125_C
VDG = 10 to 20 V, ID = 200 A
0.1 5 5 nA
100 dB
Document Number: 72156
S-03468—Rev. B, 11-Mar-03
SST/U5196NL Series
S
VDS = 20 V, ID = 200 A
g
Change with Temperature
TA = -55 to 125_C
I
DSS1
g
S
S
VDS = 20 V, ID = 200 A
G
VDG = 20 V, ID = 200 A
New Product
Vishay Siliconix
SPECIFICATIONS FOR SST/U5198NL AND SST/U5199NL (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
SST/U5198NL SST/U5199NL
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Gate-Source Breakdown Voltage V Gate-Source Cutoff Voltage V Saturation Drain Current
Gate Reverse Current I
Gate Operating Current I
Gate-Source Voltage V
b
(BR)GSS
GS(off)
I
DSS
GSS
G
GS
IG = -1 A, VDS = 0 V VDS = 20 V, ID = 1 nA -2 -0.7 -4 -0.7 -4
VDS = 20 V, VGS = 0 V 3 0.7
VGS = -30 V, VDS = 0 V -10 -25 -25 pA
TA = 150_C
VDG = 20 V, ID = 200 A
TA =125_C
VDG = 20 V, ID = 200 A
Dynamic
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Forward Transconductance
Common-Source Output Conductance
Common-Source Input Capacitance C Common-Source
Reverse Transfer Capacitance Equivalent Input Noise Voltage e
Noise Figure NF
g
fs
g
os
g
fs
g
os
iss
C
rss
n
VDS = 20 V, VGS = 0 V, f = 1 kHz
V
= 20 V, ID = 200 A
D
f = 1 kHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
VDS = 20 V, VGS = 0 V, f = 1 kHz 11
VDS = 20 V, VGS = 0 V
f = 100 Hz, R
= 10 M(U Only)
G
Matching
Differential Gate-Source Voltage
Gate-Source Voltage Differential
e with Temperature
Chan
Saturation Drain Current Ratio
Transconductance Ratio
Differential Output Conductance
Differential Gate Current
Common Mode Rejection Ratio CMRR
Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP b. Pulse test: PW v300 s duty cycle v3%.
|
V
GS1–VGS2
|
V
GS1–VGS2
|
g
|
I
T
I
I
DSS2
g
fs1
g
fs2
os1–gos2
* I
G1
G2
|
|
VDG = 20 V, ID = 200 A
T
= -55 to 125_C
VDS = 20 V, VGS = 0 V
V
= 20 V, ID = 200 A
D
|
V
= 20 V, ID = 200 A,
D
|
VDG = 10 to 20 V, ID = 200 A
VDG = 20 V, ID = 200 A
f = 1 kHz
T
= 125_C
A
,
SST5198NL 15 SST5199NL 30
U Only 20 40
SST Only 0.97
U Only 0.95 1 0.95 1
SST Only 0.97
U Only 0.95 1 0.95 1
SST Only 0.2
U Only 1 1
SST Only 0.1
U Only 5 5
-57 -50 -50
0.7
7
-20 -50 -50 nA
-5 -15 -15 pA
-0.8 -15 -15 nA
-1.5 -0.2 -3.8 -0.2 -3.8 V
3.0 1 4 1 4 mS
8 50 50
0.8 0.7 1.6 0.7 1.6 mS
1 4 4 3 6 6 1 2 2
0.5 dB
10 15 mV
97 dB
mA
7
nV⁄
√Hz
V/_C
V
S
S
pF
nA
Document Number: 72156 S-03468—Rev. B, 11-Mar-03
www.vishay.com
7-3
SST/U5196NL Series
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
5
4
g
fs
3
2
- Saturation Drain Current (mA)
1
DSS
I
I
DSS
g
fs
f = 1 kHz
0
0-5-4-3-2-1
V
- Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)
GS(off)
Output Characteristics Output Characteristics
5
V
= -2 V
GS(off)
4
I
DSS
@ VDS = 15 V, VGS = 0 V
@ VDG = 15 V, VGS = 0 V
3
g
fs
- Forward Transconductance (mS)
2.6
2.2
1.8
1.4
1
100 nA
10 nA
1 nA
100 pA
- Gate Leakage
10 pA
G
I
1 pA
0.1 pA 0302010 40 50
5
4
TA = 25_C
Gate Leakage Current
TA = 125_C
I
@ 125_C
GSS
V
= -3 V
GS(off)
IG @ ID = 200 A
200 A
I
GSS
50 A
50 A
@ 25_C
VGS = 0 V
-0.3 V
3
VGS = 0 V
-0.2 V
2
- Drain Current (mA)
D
I
1
-0.4 V
-0.6 V
-0.8 V
-1.0 V
- Drain Current (mA)I
D
I
-1.2 V
0
-1.4 V
012168420
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
Output Characteristics Output Characteristics
2
V
= -2 V
GS(off)
1.6
VGS = 0 V
1.2
0.8
- Drain Current (mA)
D
I
0.4
0
0 0.6 0.80.40.2 1
VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)
-1.6 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
-1.0 V
-1.2 V
-1.4 V
- Drain Current (mA)
D
-0.6 V
3
-0.9 V
2
-1.2 V
-1.5 V
1
-1.8 V
-2.1 V
0
-2.4 V
012168420
2.5 VGS = 0 V
-0.3 V
-0.6 V
2.0
V
GS(off)
= -3 V
-0.9 V
1.5
-1.2 V
1.0
-1.5 V
-1.8 V
0.5
0
-2.1 V
-2.4 V
0 0.6 0.80.40.2 1
www.vishay.com
7-4
Document Number: 72156
S-03468—Rev. B, 11-Mar-03
SST/U5196NL Series
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate-Source Differential Voltage
5
V
GS(off)
4
3
2
- Drain Current (mA)
D
I
125_C
1
0
0 -1.5-1.0-0.5 -2.0 -2.5
Voltage Differential with Temperature
100
VDG = 20 V
TT
V/ _C
()
GS2
10
V
-
t
GS1
V
Transfer Characteristics
100
= -2 V
TA = -55_C
25_C
VGS - Gate-Source Voltage (V) ID - Drain Current (mA)
VDS = 20 V
(mV)
GS2
V
-
GS1
V
VDG = 20 V T
= 25_C
A
10
1
0.01 0.1 1
vs. Drain Current
130
= 25 to 125_C
A
= -55 to 25_C
A
SST/U5199
U5196
120
110
CMRR (dB)
100
90
CMRR = 20 log
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
VDG = 10 - 20 V
5 - 10 V
Vishay Siliconix
SST/U5199
U5196
V
DG
V
-
GS1 VGS2
1
0.01 0.1 1
100
- Voltage Gain
V
A
Document Number: 72156 S-03468—Rev. B, 11-Mar-03
Circuit Voltage Gain vs. Drain Current
80
60
40
20
0
V
GS(off)
A
+
V
1 ) RLg
Assume VDD = 15 V, VDS = 5 V
10 V
R
+
L
80
ID - Drain Current (mA) ID - Drain Current (mA)
= -3 V
V
= -2 V
GS(off)
g
fsRL
os
I
D
0.1 10.01
- Drain Current (mA)
I
D
0.01 0.1 1
On-Resistance vs. Drain Current
V
GS(off)
0.01 0.1 1 ID - Drain Current (mA)
- Drain-Source On-Resistance ( Ω )
r
DS(on)
1 k
800
600
400
200
0
= -2 V
V
GS(off)
= -3 V
www.vishay.com
7-5
SST/U5196NL Series
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
10
8
6
4
- Input Capacitance (pF)C iss
2
0
0 -12 -16 -20-8-4
Equivalent Input Noise Voltage vs. Frequency
20
16
12
vs. Gate-Source Voltage
f = 1 MHz
VDS = 0 V
5 V
15 V
20 V
- Gate-Source Voltage (V)
V
GS
ID @ 200 A
- Reverse Feedback Capacitance (pF)C rss
2.5
VDS = 20 V
2.0
1.5
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
4
VDS = 0 V
3
5 V
2
1
20 V
0
0 -12 -20-16-8-4
15 V
VGS - Gate-Source Voltage (V)
Output Conductance vs. Drain Current
V
= -2 V VDS = 20 V
GS(off)
f = 1 kHz
TA = -55_C
8
4
en - Noise Voltage nV / Hz
0
10 100 1 k 100 k10 k
VGS = 0 V
f - Frequency (Hz)
Common-Source Forward Transconductance
2.5 V
GS(off)
2.0
1.5
1.0
- Forward Transconductance (mS)
0.5
fs
g
0
0.01 0.1 1
vs. Drain Current
= -2 V VDS = 20 V
TA = -55_C
25_C
125_C
ID - Drain Current (mA)
f = 1 kHz
1.0
- Output Conductance (µS)
os
g
0.5
0
0.01 0.1 1
25_C
125_C
ID - Drain Current (mA)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
rDS @ ID = 100 A, VGS = 0 V
@ VDS = 20 V, VGS = 0 V, f = 1 kHz
g
os
0
V
- Gate-Source Cutoff Voltage (V)
GS(off)
g
os
r
DS
-3 -5-4-2-1
- Drain-Source On-Resistance ( Ω )
r
1 k
800
600
400
200
DS(on)
0
10
os
8
- Output Conductance (
6
4
S)g
2
0
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7-6
Document Number: 72156
S-03468—Rev. B, 11-Mar-03
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