VISHAY TSUS4300 Technical data

Infrared Emitting Diode, 950 nm, GaAs

Description

TSUS4300 is an infrared emitting diode in standard
GaAs on GaAs technology, molded in a clear, blue
tinted plastic package. Its lens provides a high radiant
intensity without external optics.

TSUS4300

Vishay Semiconductors

Features

• High radiant power and radiant intensity

• Low forward voltage

• Suitable for DC and high pulse current operation

• Standard T-1(∅ 3 mm) package

• Angle of half intensity ϕ = ± 16°

• Peak wavelength λ

= 950 nm

p

• High reliability

• Good spectral matching to Si photodetectors

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

Applications

Infrared remote control systems with small package
and low cost requirements in combination with silicon
photo detectors. Infrared source in reflective sensors,
tabe end detection. Excellent matching with pho­totransistor TEFT 4300.

and WEEE 2002/96/EC

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Reverse Voltage V

Forward current I

Peak Forward Current t

Surge Forward Current t

Power Dissipation P

Junction Temperature T

Operating Temperature Range T

Storage Temperature Range T

Soldering Temperature t ≤ 5 sec, 2 mm from case T

Thermal Resistance Junction/
Ambient

/T = 0.5, tp = 100 µsIFM200 mA

p

= 100 µsI

p

R

F

FSM

amb

stg

sd

thJA

94 8636

R

V

j

5V

100 mA

2A

170 mW

100 °C

- 55 to + 100 °C

- 55 to + 100 °C

260 °C

450 K/W

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Forward Voltage I

Temp. Coefficient of V

Document Number 81053

Rev. 1.4, 08-Mar-05

F

= 100 mA, tp = 20 ms V

F

I

= 1.5 A, tp = 100 µsV

F

IF = 100 mA TK

F

F

VF

1.3 1.7 V

2.2 V

- 1.3 mV/K

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TSUS4300

VISHAY

Vishay Semiconductors

Parame te r Test condition Symbol Min Ty p . Max Unit

Reverse Current VR = 5 V I

Breakdown Voltage I

Junction capacitance V

= 100 µAV

R

= 0 V, f = 1 MHz, E = 0 C

R

R

(BR)

540

j

30 pF

100 µA

Optical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parame te r Test condition Symbol Min Ty p. Max Unit

Radiant Intensity I

Radiant Power I

Temp. Coefficient of φ

e

= 100 mA, tp = 20 ms I

F

I

= 1.5 A, tp = 100 µsI

F

= 100 mA, tp = 20 ms φ

F

IF = 20 mA TKφ

e

e

e

e

Angle of Half Intensity ϕ ± 16 deg

Peak Wavelength I

Spectral Bandwidth I

Temp. Coefficient of λ

p

Rise Time I

Fall Time I

= 100 mA λ

F

= 100 mA ∆λ 50 nm

F

IF = 100 mA TKλ

= 100 mA t

F

I

= 1.5 A t

F

= 100 mA t

F

I

= 1.5 A t

F

p

p

r

r

f

f

Virtual Source Diameter ∅ 2.1 mm

71835mW/sr

160 mW/sr

20 mW

- 0.8 %/K

950 nm

0.2 nm/K

800 ns

400 ns

800 ns

400 ns

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

250

200

150

R

thJA

100806040200

V

P - Power Dissipation ( mW )

94 8029

100

50

0

T

- Ambient Temperature ( °C)

amb

Figure 1. Power Dissipation vs. Ambient Temperature

125

100

F

I - Forward Current ( mA )

94 7916

75

50

25

0

T

- Ambient Temperature ( °C)

amb

R

Figure 2. Forward Current vs. Ambient Temperature

thJA

100806040200

www.vishay.com

2

Document Number 81053

Rev. 1.4, 08-Mar-05