The TSOP7000 is a miniaturized receiver for infrared
remote control and IR data transmission. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
operation with high data rates and long distances.
This component has not been qualified according to
automotive specifications.
1
2
3
16672
Features
• Photo detector and preamplifier in one
package
• Internal Bandfilter for PCM frequency
• Internal shielding against electrical field
disturbance
• TTL and CMOS compatibility
e3
Special Features
• Data rate 20 kbit/s
• Supply voltage 2.7 - 5.5 V
• Short settling time after power on
• High envelope duty cycle can be received
• Enhanced immunity against disturbance from
energy saving lamps
• Output active low
• Small size package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
Mechanical Data
Pinning:
1 = OUT, 2 = GND, 3 = V
and WEEE 2002/96/EC
Block DiagramApplication Circuit
16841
PIN
AGCInput
Band
Pass
Control
Demodulator
Circuit
10 kΩ
3
V
S
1
OUT
2
GND
16843
Transmitte r
with
TSHFxxxx
R 1 +C 1 recommended to suppress power supply
disturbances.
R 2 optional for improved pulse forming.
TSOPxxxx
S
R1= 47 Ω
C1=
4.7 µF
V
R2>=
1 kΩ
O
µC
+ V
GN D
S
V
S
Circuit
OUT
GND
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Document Number 82147
Rev. 1.7, 22-Jan-07
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
ParameterTest conditionSymbolVal ueUnit
Supply VoltagePin 3
Voltage at output to supplyPin 1V
Supply CurrentPin 3
Output VoltagePin 1
Output CurrentPin 1
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Soldering Temperaturet ≤ 10 s, 1 mm from case
Power Consumption
V
S
- V
S
O
I
S
V
O
I
O
T
j
T
stg
T
amb
T
sd
P
tot
-0.3 to + 6.0V
-0.3 to
(V
-0.3 to + 6.0V
- 25 to + 85°C
- 25 to + 85°C
Electrical and Optical Characteristics
T
= 25 °C, unless otherwise specified
amb
ParameterTest conditionSymbolMinTy p.MaxUnit
d
d
E
E
I
SD
SH
V
S
max
max
e min
e max
V
QL
V
QH
Δ
tpo
t
don
t
V
t
f
t
r
t
r
ϕ
1/2
2.755.5V
30
VS - 0.25
- 15+ 5+ 15µs
1536µs
Supply Current (Pin 3)Dark ambient
E
= 40 klx, sunlightI
v
Supply Voltage (Pin 3)
Transmission Distanceλ
= 870 nm,
p
IR Diode TSHF5400,
I
= 300 mA
F
λ
= 950 nm,
p
IR Diode TSAL6400,
I
= 300 mA
F
Threshold Irradianceλ
= 870 nm,
p
optical test signal of fig. 1
Maximum IrradianceOptical test signal of fig. 1
Output Voltage Low (Pin 1)1 kΩ external pull up resistor
Output Voltage High (Pin 1)No external pull-up resistor
Bandpass filter qualityQ10
Out-Pulse width toleranceOptical test signal of fig.1,
1.5 mW/m
2
≤ Ee ≤ 30 W/m
2
Delay time of output pulseOptical test signal of fig. 1,
E
> 1.5 mW/m
e
2
Receiver start up timeValid data after power on
Falling timeLeading edge of output pulse
Rise timeNo external pull up resistor
1 kΩ external pull up resistor
DirectivityAngle of half transmission
distance
TSOP7000
V
+ 0.3)
S
5mA
15mA
100°C
260°C
30mW
2.02.7mA
2.3mA
20m
12m
0.81.5
100mV
50µs
0.4µs
12µs
1.2µs
± 45deg
mW/m
W/m
V
2
2
Document Number 82147
Rev. 1.7, 22-Jan-07
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295
TSOP7000
Vishay Semiconductors
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
Optical Test Signal
E
e
V
Q
V
QH
50 %
V
QL
t
po=tpi
tpi=22µs
(f = 455 kHz, 10 cycles/burst)
2.2 µs
>48.6 µs
t
don
t
15 µs
ı
(min. duty cycle)
Output Signal of TSOP7000
po
90 %
t
f
10 %
Figure 1. Output Function
30
N = 10 cycles/burst
25
20
t
16792
t
r
t
15
10
j- Jitter of Output Pulse (µs)
tdon, tpo
j
5
0
0.1
16791
Jitter - t
po
Jitter - t
don
110100 1000 10000 100000
- Irradiance (mW/m²)
E
e
Figure 4. Jitter of Output Pulse
Optical Test Signal
(IR diode TSHF5400,p870 nm, IF= 300 mA, f = 455 kHz, 10 cycles/burst)
tpi=22 µs
E
e
Output Signal of TSOP7000
V
O
V
OH
V
OL
j
tdon
jitter of leading edgejitter of outputpulse width
t
don
t
po
Figure 2. Output Fucntion (mit Jitter)
35
30
25
20
15
10
po
5
don
t , t - Output Pulse Length (µs)
0
0.1
16790
Figure 3. Output Pulse Diagram (t
Output pulse width - t
Delay time - t
po
don
N = 10 cycles/burst
110100 1000 10000 100000
- Irradiance (mW/m²)
E
e
don
j
tpo
, tpo)
16755
1.0
0.9
0.8
0.7
0.6
t
0.5
0.4
E - Responsitivity
0.3
/E
0.2
e mine rel
t
0.1
0.0
300350 400450 500550 600
16751
f - Frequency (kHz)
Figure 5. Frequency Dependence of Responsivity
14
2
Correlation with ambient light sources
(Disturbanceeffect): 10 W/m
12
10
(Stand.illum.A,T = 2855 K)
10 W/m
(Daylight,T = 5900 K)
2
= 10 klx
2
= 1.4 klx
8
6
4
2
e min
0
E - Threshold Irradiance (mW/m )
0.010.101.0010.00100.00
16786
E - DC Irradiance (W/m
2
)
Figure 6. Sensitivity in Bright Ambient
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Document Number 82147
Rev. 1.7, 22-Jan-07
TSOP7000
Vishay Semiconductors
2.0
2
1.8
Sensitivity in dark ambient
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
e min
0.0
E - Threshold Irradiance (mW/m )
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
16787
V
- Supply Voltage (V)
S
Figure 7. Sensitivity vs. Supply Voltage
1.1
1.0
0.9
0.8
0.7
emin
0.6
E- Relative Sensitivity
0.5
16788
N -Burstlength (carriercycles/burst)
Figure 8. Rel. Sensitivity vs. Burstlength
1.2
1.0
0.8
0.6
0.4
rel
0.2
λ
S ( )- Relative Spectral Sensitivity
0.0
750 800 850 900 950 1000 10501100 1150
16789
λ - Wavelength (nm)
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0°
10°20°
1.0
0.9
0.8
0.7
262218142824201612108
96 12223p2
0.40.200.20.4
0.6
d
- Relative Transmission Distance
rel
30°
40°
50°
60°
70°
80°
0.6
Figure 11. Directivity
2.3
2.2
2.1
2.0
VS= 5.5 V
VS= 2.7 V
1.9
1.8
1.7
s
I- Supply Current (mA)
1.6
1.5
5 1525354555657585
- 5- 15- 25
16754
T
- Ambient Temperature (°C)
amb
Figure 9. Supply Current vs. Ambient Temperature
Document Number 82147
Rev. 1.7, 22-Jan-07
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TSOP7000
Vishay Semiconductors
Recommendation for Suitable Data Formats
The circuit of the TSOP7000 is designed so that disturbance signals are identified and unwated output
pulses due to noise or disturbances are avoided. A
bandpass filter, an automatic gain control and an integrator stage is used to suppress such disturbances.
The distinguishing marks between data signal and
disturbance are carrier frequency, burst length and
the envelope duty cycle.
The data signal should fullfill the following conditions:
• The carrier frequency should be close to 455 kHz.
Package Dimensions in millimeters
• The burstlength should be at least 22 µs (10 cycles
of the carrier signal) and shorter than 500 µs.
• The separation time between two consecutive
bursts should be at least 26 µs.
• If the data bursts are longer than 500 µs then the
envelope duty cycle is limited to 25 %
• The duty cycle of the carrier signal (455 kHz) may be
between 50 % (1.1 µs pulses) and 10 % (0.2 µs
pulses). The lower duty cycle may help to save battery power.
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16003
Document Number 82147
Rev. 1.7, 22-Jan-07
TSOP7000
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.