P-Channel 30-V (D-S) MOSFET
P
PRODUCT SUMMARY
V
(BR)DSS(min)
FEATURES BENEFITS APPLICATIONS
-30
(V)
1.4 @ VGS = -10 V -1.3 to -3.0 -385
3.5 @ VGS = -4.5 V -1.3 to -3.0 -240
r
DS(on)
()
V
GS(th)
(V) ID (mA)
TP0202K
Vishay Siliconix
D High-Side Switching
D Low On-Resistance: 1.2 Ω (typ)
D Low Threshold: -2.0 V (typ)
D Fast Swtiching Speed: 14 ns (typ)
D Low Input Capacitance: 31 pF (typ)
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays
D Gate-Source ESD Protection
TO-236
(SOT-23)
G
1
Marking Code: 2Kwll
D
3
S
2
Top View
2K = Part Number Code for TP0202K
w = Week Code
ll = Lot Traceability
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
a
Continuous Drain Current (TJ = 150_C)
Pulse Drain Current
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
b
a
_
a
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
DS
GS
I
D
I
DM
D
R
thJA
stg
-30
"20
-385
-280
-750
350
185
350
-55 to 150
V
mA
mW
_C/W
_C
Document Number: 71609
S-03590—Rev. C, 31-Mar-03
www.vishay.com
11-1
TP0202K
DS GS D
p
DS GS
p
VDD = -15 V, RL = 75
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
a
a
a
a
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching
b
Turn-On Time
Turn-Off Time
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.
t
d(on)
t
d(off)
oss
t
g
gs
gd
iss
rss
r
t
f
VGS = 0 V, ID = -100 A
VDS = VGS, ID = -250 A
VDS = 0 V, VGS = "5 V "50
VDS = 0 V, VGS = "10 V "300
VDS = -24 V, VGS = 0 V -100
VDS = -24 V, VGS = 0 V, T
J
VDS = -10 V, VGS = -10 V -500 mA
VGS = -4.5 V, ID = -50 mA 2.1 3.5
VGS = -10 V, ID = -500 mA 1.25 1.4
VDS = -5 V, ID = -200 mA 315 mS
IS = -250 mA, VGS = 0 V -1.2 V
VDS = -16 V, VGS = -10 V, ID ^ -200 mA
VDS = -15 V, VGS = 0 V, f = 1 MHz
VDD = -15 V, RL = 75
ID ^ -200 mA, V
= -10 V, RG = 6
GEN
= 85_C
-30 -38
-1.3 -2 -3.0
-10
175
225
1000
31
11
4
9
6
30
20
V
nA
A
pC
pF
ns
www.vishay.com
11-2
Document Number: 71609
S-03590—Rev. C, 31-Mar-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
1.6
1.4
1.2
1.0
0.8
0.6
- Drain Current (A)I
D
0.4
0.2
VGS = 10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V
Output Characteristics Transfer Characteristics
1200
1000
800
600
- Drain Current (mA)I
400
D
200
TP0202K
Vishay Siliconix
TJ = -55_C
25_C
125_C
0.0
012345
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
20
16
)
12
8
- On-Resistance (r
DS(on)
4
0
0 4 8 12 16 20
50
V
f = 1 MHz
40
30
VGS = 4.5 V
VGS = 10 V
VGS - Gate -to-Source Voltage (V)
Capacitance
= 0 V
GS
C
iss
0
0123456
- Gate-to-Source Voltage (V)
V
GS
On-Resistance vs. Drain Current
14
12
)
10
8
6
- On-Resistance (r
4
DS(on)
2
0
0 200 400 600 800 1000
VGS = 4.5 V
VGS = 10 V
ID - Drain Current (mA)
Gate Charge
16
ID = 200 mA
14
12
10
VDS = 16 V
20
C - Capacitance (pF)
10
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Document Number: 71609
S-03590—Rev. C, 31-Mar-03
8
VDS = 10 V
C
oss
C
rss
6
- Gate-to-Source Voltage (V)
4
GS
V
2
0
0 200 400 600 800 1000 1200 1400 1600
Qg - Total Gate Charge (pC)
www.vishay.com
11-3
TP0202K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
Source-Drain Diode Forward Voltage
VGS = 0 V
TJ = 150_C
1
0.00 0.3 0.6 0.9
VSD - Source-to-Drain Voltage (V)
)
(Normalized)
- On-Resistance (r
DS(on)
On-Resistance vs. Junction Temperature
1.8
1.6
1.4
VGS = 10 V @ 200 mA
1.2
1.0
VGS = 4.5 V @ 50 mA
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (_C)
1000
100
- Source Current (A)I
10
S
TJ = 25_C
TJ = -55_C
1.2 1.5
Threshold Voltage Variance Over Temperature
0.5
0.4
0.3
0.2
Variance (V)V
0.1
-0.0
GS(th)
-0.1
-0.2
-0.3
-50 -25 0 25 50 75 100 125 150
2
1
0.1
Thermal Impedance
Normalized Effective Transient
0.01
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
-4
10
ID = 250 A
T
- Junction Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
Single Pulse
-3
10
I
vs. Temperature
GSS
1000
VGS = 10 V
100
- (nA)I
GSS
VGS = 5 V
10
1
25 50 75 100
125 150
TJ - Junction Temperature (_C)
Notes:
P
DM
t
1
t
2
t
thJA
thJA
100
1
t
2
(t)
= 350_C/W
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM - TA = PDMZ
4. Surface Mounted
-2
10
-1
1 10 60010
Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 71609
S-03590—Rev. C, 31-Mar-03
Loading...