VISHAY TP0202K Technical data

P-Channel 30-V (D-S) MOSFET

P

PRODUCT SUMMARY

V

(BR)DSS(min)

FEATURES BENEFITS APPLICATIONS

-30

(V)

1.4 @ VGS = -10 V -1.3 to -3.0 -385

3.5 @ VGS = -4.5 V -1.3 to -3.0 -240

r

DS(on)

()

V

GS(th)

(V) ID (mA)

TP0202K

Vishay Siliconix

D High-Side Switching
D Low On-Resistance: 1.2 Ω (typ)
D Low Threshold: -2.0 V (typ)
D Fast Swtiching Speed: 14 ns (typ)
D Low Input Capacitance: 31 pF (typ)

D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Easily Driven Without Buffer

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems
D Power Supply Converter Circuits
D Solid State Relays

D Gate-Source ESD Protection

TO-236

(SOT-23)

G

1

Marking Code: 2Kwll

D

3

S

2

Top View

2K = Part Number Code for TP0202K

w = Week Code
ll = Lot Traceability

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V
Gate-Source Voltage V

a

Continuous Drain Current (TJ = 150_C)

Pulse Drain Current

Power Dissipation

Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range TJ, T

Notes
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.

b

a

_

a

TA = 25_C
TA = 85_C

TA = 25_C

TA = 85_C

DS

GS

I

D

I

DM

D

R

thJA

stg

-30

"20

-385

-280

-750
350
185
350

-55 to 150

V

mA

mW

_C/W

_C

Document Number: 71609
S-03590—Rev. C, 31-Mar-03

www.vishay.com

11-1

TP0202K

DS GS D

p

DS GS

p

VDD = -15 V, RL = 75 

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Condition Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

a

a

a

a

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

V

SD

Dynamic

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

Switching

b

Turn-On Time

Turn-Off Time

Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Switching time is essentially independent of operating temperature.

t

d(on)

t

d(off)

oss

t

g
gs
gd

iss

rss

r

t

f

VGS = 0 V, ID = -100 A

VDS = VGS, ID = -250 A

VDS = 0 V, VGS = "5 V "50

VDS = 0 V, VGS = "10 V "300

VDS = -24 V, VGS = 0 V -100

VDS = -24 V, VGS = 0 V, T

J

VDS = -10 V, VGS = -10 V -500 mA

VGS = -4.5 V, ID = -50 mA 2.1 3.5

VGS = -10 V, ID = -500 mA 1.25 1.4

VDS = -5 V, ID = -200 mA 315 mS

IS = -250 mA, VGS = 0 V -1.2 V

VDS = -16 V, VGS = -10 V, ID ^ -200 mA

VDS = -15 V, VGS = 0 V, f = 1 MHz

VDD = -15 V, RL = 75 

ID ^ -200 mA, V

= -10 V, RG = 6 

GEN

= 85_C

-30 -38

-1.3 -2 -3.0

-10

175
225

1000

31
11

4

9

6
30
20

V

nA

A



pC

pF

ns

www.vishay.com

11-2

Document Number: 71609

S-03590—Rev. C, 31-Mar-03