VISHAY TP0101K Technical data
TP0101K
V
b
b
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
VDS (V)
−20
G
S
0.65 @ V
0.85 @ V
1
2
r
DS(on)
GS
GS
TO-236
(SOT-23)
(W)
= −4.5 V −0.58
= −2.5 V −0.5
3
D
ID (A)
Marking Code: K4ywl
K4 = Part Number Code for TP0101K
y = Year Code
w = Week Code
l = Lot Traceability
New Product
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching−Cell Phones, Pagers
Vishay Siliconix
Displays, Memories
D
100 W
G
Top View
Ordering Information: TP0101K-T1—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limits Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range TJ, T
a
_
b
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
DS
GS
I
D
I
DM
I
S
P
D
stg
THERMAL RESISTANCE RATINGS
Parameter Symbol Limits Unit
−20
"8
−0.58
−0.46
−2
−0.3
0.35
0.22
−55 to 150
S
A
W
_C
Thermal Resistance, Junction-to-Ambient
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 72692
S-40248—Rev. A, 16-Feb-04
b
R
thJA
357
_C/W
www.vishay.com
1
TP0101K
m
ID ^ −0.58 A
p
ID ^
V
=
V
T
Off Ti
Rg 6 W
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Time
urn-
b
-
me
a
a
a
a
(BR)DSS
I
r
DS(on)
t
t
GS(th)
GSS
DSS
D(on)
g
fs
V
SD
g
gs
gd
g
d(on)
t
r
d(off)
t
f
VGS = 0 V, ID = −10 mA
VDS = VGS, ID = −50 mA
VDS = 0 V, VGS = "4.5 V "5
VDS = −20 V, VGS = 0 V −1
TJ = 55_C
VDS v −5 V, VGS = −4.5 V −1.2
VDS v −5 V, VGS = −2.5 V −0.5
VGS = −4.5 V, ID = −0.58 A 0.42 0.65
VGS = −2.5 V, ID = −0.5 A 0.64 0.85
VDS = −5 V, ID = −0.58 A 1300 mS
IS = −0.3 A, VGS = 0 V −0.9 −1.2 V
VDS = −6 V, VGS =−4.5 V
^ −0.58 A
I
VDD = −6 V, RL = 10 W
−0.58 A,
Rg = 6 W
GEN
−4.5
Limits
−20
−0.5 −0.7 −1.0
−10
1400 2200
300
250
150
25 35
30 45
55 85
38 60
V
mA
A
W
pC
W
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
2.0
VGS = 5 thru 3 V
1.6
1.2
0.8
− Drain Current (A)I
D
0.4
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS − Drain-to-Source Voltage (V)
2.5 V
2 V
1.5 V
1 V
2.0
TJ = −55_C
1.6
1.2
0.8
− Drain Current (A)I
D
0.4
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS − Gate-to-Source Voltage (V)
25_C
125_C
www.vishay.com
2
Document Number: 72692
S-40248—Rev. A, 16-Feb-04
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