Vishay TP0101K Schematic

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET, Low-Threshold

TP0101K

PRODUCT SUMMARY

VDS (V) R

- 20

G

S

Ordering Information:

DS(on)

0.65 at V

0.85 at V

TO-236

(SOT-23)

1

2

To p View

GS

TP0101K-T1-E3 (Lead (Pb)-free) TP0101K-T1-GE3 (Lead (Pb)-free and Halogen-free)

(Ω)

= - 4.5 V

= - 2.5 V

3

FEATURES

I

(A)

D

- 0.58

- 0.5

e

• Halogen-free According to IEC 61249-2-21 Available

• TrenchFET

®

Power MOSFET

• ESD Protected: 3000 V

APPLICATIONS

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

• Battery Operated Systems, DC/DC Converters

• Power Supply Converter Circuits

• Load/Power Switching-Cell Phones, Pagers

D

Marking Code: K4ywl

D

K4 = Part Number Code for TP0101K

y = Year Code w = Week Code l = Lot Traceability

G

100 Ω

S

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current

= 150 °C)

J

a

Continuous Source-Drain (Diode Current)

Power Dissipation

b

Operating Junction and Storage Temperature Range

TA = 25 °C

= 70 °C

T

A

TA = 25 °C

= 70 °C

T

A

V

DS

V

GS

I

D

I

DM

I

S

P

D

, T

T

J

stg

- 20

± 8

- 0.58

- 0.46

- 2

- 0.3

0.35

W

0.22

- 55 to 150 °C

V

A

Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 10 s.

THERMAL RESISTANCE RATINGS

Parameter Symbol Limits Unit

Thermal Resistance, Junction-to-Ambient

b

Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 10 s.

Document Number: 72692 S-83053-Rev. B, 29-Dec-08

R

thJA

357 °C/W

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1

TP0101K

Vishay Siliconix

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Limits

Parameter

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

b

a

Total Gate Charge

Gate-Drain Charge

Gate Resistance

Tur n -O n Ti me

Turn-Off Time

Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Symbol Test Conditions

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

V

Q

t

d(on)

t

d(off)

DS

g

fs

SD

Q

g

gs

gd

R

g

t

r

t

f

VGS = 0 V, ID = - 10 µA

V

= VGS, ID = - 50 µA

DS

VDS = - 0 V, VGS = ± 4.5 V

V

= - 20 V, V

DS

V

= - 20 V, V

DS

V

DS

V

DS

V

GS

V

GS

≤ - 5 V, V

= - 4.5 V, ID = - 0.58 A

= - 2.5 V, ID = - 0.5 A

VDS = - 5 V, ID = - 0.58 A

IS = - 0.3 A, VGS = 0 V

VDS = - 6 V, VGS = - 4.5 V

≅ - 0.58 A

I

D

V

= - 6 V, RL = 10 Ω

DD

≅ - 0.58 A, V

I

D

GEN

GS

= 0 V, TJ = 55 °C

= - 4.5 V

GS

= - 2.5 V

GS

= - 4.5 V, Rg = 6 Ω

= 0 V

Min. Typ. Max. Unit

- 20

- 0.5 - 0.7 - 1.0

V

± 5

- 1

µA

- 10

- 1.2

- 0.5

0.42 0.65

0.64 0.85

A

Ω

1300 mS

- 0.9 - 1.2 V

1400 2200

300

pCGate-Source Charge

250

150 Ω

25 35

30 45

55 85

ns

38 60

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Document Number: 72692

S-83053-Rev. B, 29-Dec-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

2.0

VGS = 5 thru 3 V

1.6

2.5 V

TP0101K

Vishay Siliconix

2.0

TJ = - 55 °C

1.6 25 °C

1.2

0.8

- Drain Current (A)

D

I

0.4

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS- Drain-to-Source Voltage (V)

Output Characteristics

3.0

2.5

2.0

1.5

- On-Resistance (Ω)R

1.0

DS(on)

0.5

VGS = 2.5 V

VGS = 4.5 V

2 V

1.5 V

1 V

1.2

0.8

- Drain Current (A)I

D

0.4

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

- Gate-to-Source Voltage (V)

V

GS

Transfer Characteristics

200

175

C

150

125

100

75

C - Capacitance (pF)

50

25

C

rss

iss

C

oss

125 °C

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

On-Resistance vs. Drain Current and Gate Voltage

5

VDS = 6 V

I

= 0.6 A

D

4

3

2

- Gate-to-Source Voltage (V)

GS

V

1

0

0.0 0.3 0.6 0.9 1.2 1.5

Document Number: 72692 S-83053-Rev. B, 29-Dec-08

ID - Drain Current (A)

Qg- Total Gate Charge (nC)

Gate Charge

0

048 12 16 20

VDS- Drain-to-Source Voltage (V)

Capacitance

1.7

1.5

1.3

- On-Resistance R

1.1

(Normalized)

DS(on)

0.9

0.7

- 50 - 25 0 25 50 75 100 125 150

VGS = 4.5 V

= 0.6 A

I

D

- Junction Temperature (°C)

T

J

On-Resistance vs. Junction Temperature

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Vishay TP0101K Schematic [ru]