Vishay TN0201T Schematic [ru]

PRODUCT SUMMARY

TN0201T

Vishay Siliconix

N-Channel 20–V (D–S) MOSFET

V

(BR)DSS

Min (V)

20

r

Max (W)

DS(on)

1.0 @ VGS = 10 V

1.4 @ VGS = 4.5 V

V

(V) ID (A)

GS(th)

1.0 to 3.0 0.39

FEATURES BENEFITS APPLICATIONS

D Low On-Resistance: 0.75 W
D Low Threshold: <1.75 V
D Low Input Capacitance: 65 pF
D Fast Switching Speed: 15 ns
D Low Input and Output Leakage

D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage

TO-236

(SOT-23)

1

G

D

3

S

2

D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems
D Solid-State Relays

Marking Code: N1wll
N1 = Part Number Code for TN0201T

w = Week Code
ll = Lot Traceability

Top View

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Limit Unit

Drain-Source Voltage V
Gate-Source Voltage V

Continuous Drain Current (TJ = 150_C)

Pulsed Drain Current

Power Dissipation

Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T

Notes
a. Pulse width limited by maximum junction temperature.

Document Number: 70200
S-04279—Rev. E, 16-Jul-01

a

_

TA= 25_C
TA= 70_C

TA= 25_C
TA= 70_C

I

I

DM

P

thJA

DS
GS

D

D

stg

20

"20

0.39

0.25

0.75

0.35

0.22
357

–55 to 150

V

A

W

_C/W

_C

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11-1

TN0201T

W

D

Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ

Static

Limits

a

Max Unit

Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

a, c

b

b

b

b

On-State Drain Current

Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage V

Dynamic

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

a

Switching

Turn-On Time

Turn-Off Time

Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBP02
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

r

DS(on)

g

fs

SD

g

gs

gd

iss

oss

rss

t

d(on)

t

r

t

d(off)

t

f

VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 0.25 mA 1.0 1.90 3.0
VDS = 0 V, VGS = "20 V "100 nA

VDS = 16 V, VGS = 0 V 1

VDS = 14 V, VGS = 0 V, TJ = 55_C

VDS = 10 V, VGS = 10 V 0.5 0.75 A

VGS = 4.5 V, ID = 0.1 A 1
VGS = 10 V, ID = 0.3 A 0.75 1.0

VDS = 10 V, ID = 0.2 A 450 mS

IS = 0.3 A, VGS = 0 V 0.85 V

VDS = 16 V, VGS = 10 V

^ 0.3 A

ID ^ 0.3 A

I

VDS = 15 V, VGS = 0 V, f = 1 MHz

VDD = 15 V, RL = 50 W

ID ^ 0.3 A, V

R

= 6 W

G

GEN

= 10 V

20 40

1400

300
200

V

10

1.4

65
35

6

5
10
12

6

mA

pC

pF

ns

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11-2

Document Number: 70200

S-04279—Rev. E, 16-Jul-01

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

TN0201T

Vishay Siliconix

0.8

0.7

0.6

0.5

0.4

0.3

– Drain Current (A)

D

I

0.2

0.1

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VDS – Drain-to-Source Voltage (V)

5 V

VGS = 10, 9, 8, 7, 6 V

On-Resistance vs. Gate-Source Voltage On-Resistance vs. Drain Current

2.4

2.0

1.6

1.2

Output Characteristics Transfer Characteristics

– On-Resistance ( Ω )

DS(on)

r

0.8

0.4

ID @ 300 mA

4 V

3 V

2 V

1.0

0.8

0.6

0.4

– Drain Current (A)

D

I

0.2

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

1.5

1.2

0.9

0.6

– On-Resistance ( Ω )

DS(on)

r

0.3

TJ = 125_C

V

– Gate-to-Source Voltage (V)

GS

VGS = 4.5 V

25_C

–55_C

VGS = 10 V

0.0
0 4 8 12 16 20

On-Resistance vs. Junction Temperature

1.65

1.45
VGS = 10 V @ 300 mA

1.25

(Normalized)

1.05

– On-Resistance ( Ω )

DS(on)

r

0.85

0.65

–50 –25 0 25 50 75 100 125 150

Document Number: 70200
S-04279—Rev. E, 16-Jul-01

VGS = 4.5 V
@ 100 mA

TJ – Junction Temperature (_C)

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
– Drain Current (A)VGS – Gate-to-Source Voltage (V)

I

D

Threshold Voltage Variance Over Temperature

0.2

0.1
ID = 250 mA

–0.0

–0.1

– Variance (V)

–0.2

GS(th)

V

–0.3

–0.4

–50 –25 0 25 50 75 100 125 150

– Junction Temperature (_C)

T

J

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11-3

TN0201T

Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

140

120

100

80

60

40

C – Capacitance (pF)

20

0

VGS = 0V
S = IMH

0 4 8 12 16 20

Capacitance

Z

C

iss

VDS – Drain-to-Source Voltage (V)

10.0

1.0

C

oss

C

rss

Source-Drain Diode Forward Voltage

ID = 250 mA

20

VDS = 16 V

= 300 mA

I

D

15

10

5

– Gate-to-Source Voltage (V)

GS

V

0

0 500 1000 1500 2000 2500 3000

Gate Charge

Qg – Total Gate Charge (pC)

0.100

– Source Current (A)

S

I

0.010

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

TJ = 125_C

25_C

VSD – Source-to-Drain Voltage (V)

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11-4

Document Number: 70200

S-04279—Rev. E, 16-Jul-01

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1