Vishay TN0201T Schematic [ru]
PRODUCT SUMMARY
TN0201T
Vishay Siliconix
N-Channel 20–V (D–S) MOSFET
V
(BR)DSS
Min (V)
20
r
Max (W)
DS(on)
1.0 @ VGS = 10 V
1.4 @ VGS = 4.5 V
V
(V) ID (A)
GS(th)
1.0 to 3.0 0.39
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 0.75 W
D Low Threshold: <1.75 V
D Low Input Capacitance: 65 pF
D Fast Switching Speed: 15 ns
D Low Input and Output Leakage
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
TO-236
(SOT-23)
1
G
D
3
S
2
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Marking Code: N1wll
N1 = Part Number Code for TN0201T
w = Week Code
ll = Lot Traceability
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current (TJ = 150_C)
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
a
_
TA= 25_C
TA= 70_C
TA= 25_C
TA= 70_C
I
I
DM
P
thJA
DS
GS
D
D
stg
20
"20
0.39
0.25
0.75
0.35
0.22
357
–55 to 150
V
A
W
_C/W
_C
www.vishay.com
11-1
TN0201T
W
D
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions Min Typ
Static
Limits
a
Max Unit
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
a, c
b
b
b
b
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage V
Dynamic
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
a
Switching
Turn-On Time
Turn-Off Time
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBP02
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
(BR)DSS
GS(th)
GSS
DSS
I
D(on)
r
DS(on)
g
fs
SD
g
gs
gd
iss
oss
rss
t
d(on)
t
r
t
d(off)
t
f
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 0.25 mA 1.0 1.90 3.0
VDS = 0 V, VGS = "20 V "100 nA
VDS = 16 V, VGS = 0 V 1
VDS = 14 V, VGS = 0 V, TJ = 55_C
VDS = 10 V, VGS = 10 V 0.5 0.75 A
VGS = 4.5 V, ID = 0.1 A 1
VGS = 10 V, ID = 0.3 A 0.75 1.0
VDS = 10 V, ID = 0.2 A 450 mS
IS = 0.3 A, VGS = 0 V 0.85 V
VDS = 16 V, VGS = 10 V
^ 0.3 A
ID ^ 0.3 A
I
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDD = 15 V, RL = 50 W
ID ^ 0.3 A, V
R
= 6 W
G
GEN
= 10 V
20 40
1400
300
200
V
10
1.4
65
35
6
5
10
12
6
mA
pC
pF
ns
www.vishay.com
11-2
Document Number: 70200
S-04279—Rev. E, 16-Jul-01
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