• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax/IVmin
• Lead (Pb)-free product - RoHS compliant - Lead
(Pb)-free soldering
• Jedec level 2a
≤ 1.6
TLMKE340.
Vishay Semiconductors
e3
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLMKE340. is the PLCC-4.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PARTCOLOR, LUMINOUS INTENSITYTECHNOLOGY
TLMKE3400-GS08
TLMKE3401-GS08
Red/yellow, I
Red/yellow, I
> 50 mcd
V
> 63 mcd
V
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 83227
Rev. 1.4, 25-Sep-07
www.vishay.com
1
TLMKE340.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) TLMKE340.
PARAMETERTEST CONDITIONSYMBOLVAL UEUNIT
= 10 μAV
Reverse voltage per diode
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperaturet ≤ 5 s
Thermal resistance junction/
ambient
Note:
1)
T
= 25 °C, unless otherwise specified
amb
I
R
≤ 80 °CI
T
amb
≤ 10 μsI
t
p
mounted on PC board
(pad size > 16 mm
2
)
T
T
R
F
FSM
P
T
amb
stg
T
sd
thJA
R
V
j
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., RED
PARAMETERTEST CONDITIONPARTSYMBOLMINTYP.MAXUNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
= 20 mA
I
F
I
= 20 mAλ
F
= 20 mAλ
I
F
I
= 20 mA
F
I
= 20 mAV
F
I
= 10 μAV
R
= 0, f = 1 MHzC
V
R
TLMKE3400
TLMKE3401
I
V
I
V
d
p
ϕ± 60deg
F
R
j
6V
30mA
0.1A
80mW
125°C
- 40 to + 100°C
- 40 to + 100°C
260°C
560K/W
50200mcd
63160mcd
630nm
643nm
1.92.6V
6V
15pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., YELLOW
PARAMETERTEST CONDITIONPARTSYMBOLMINTYP.MAXUNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
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2
= 20 mA
I
F
= 20 mAλ
I
F
= 20 mAλ
I
F
= 20 mA
I
F
I
= 20 mAV
F
I
= 10 μAV
R
= 0, f = 1 MHzC
V
R
TLMKE3400
TLMKE3401
I
V
I
V
d
p
80320mcd
100250mcd
581588594nm
590nm
ϕ± 60deg
F
R
j
6V
22.6V
15pF
Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, TLMKE34..1)
RED
Vb
80...125 mcd
Y
E
L
L
O
W
Wa
100...160 mcd
Wb
125...200 mcd
Xa
160...250 mcd
Xb
200...320 mcd
Note:
1)
followed by 00 or 01
COLOR CLASSIFICATION
GROUP
1581584
2583586
3585588
4587590
5589592
6591594
Ub
50...80 mcd
Va
63...100 mcd
Vb
80...125 mcd
Wa
100...160 mcd
0000000000
00
00
00
00
01
00
01
00
01
00
01
00
01
00
01
00
01
00
01
00
01
0000000000
DOMINANT WAVELENGTH (NM)
YEL L O W
MAX MAX
125...200 mcd
Wb
00
00
00
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
40
35
30
I - Forward Current (mA)
19476
25
20
15
10
F
5
0
2 chips on
0 1020304050607080 90 100
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
60 °C
1 chip on
80 °C
1000
- Forward Current (mA)
I
16621
tP/T = 0.01
0.02
0.05
100
0.2
0.5
FM
10
0.010.1110100
1
tP - Pulse Length (ms)
0.1
Figure 2. Forward Current vs. Pulse Duration
Document Number 83227
Rev. 1.4, 25-Sep-07
www.vishay.com
3
TLMKE340.
Vishay Semiconductors
0°
10°20°
1.0
0.9
0.8
- Relative Luminous Intensity
0.7
V rel
I
0.4 0.200.2 0.4
0.6
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
30°
40°
50°
60°
70°
80°
0.6
2.0
1.8
1.6
Red
1.4
1.2
1.0
0.8
0.6
0.4
- Relative Luminous Intensity
0.2
V rel
I
0.0
0 1020304050607080 90 100
16618-1
T
- Ambient Temperature (°C)
amb
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
100
Yellow/Red
10
- Forward Current (mA)
F
I
1
1.01.52.02.53.0
95 10878-1
V
- Forward Voltage (V)
F
Figure 4. Forward Current vs. Forward Voltage
1.6
1.4
IF = 20 mA
Yellow
1.2
1.0
0.8
0.6
0.4
- Relative Luminous Intensity
0.2
V rel
I
0.0
0 1020304050607080 90 100
95 10880-1
T
- Ambient Temperature (°C)
amb
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10
Yellow/Red
1.0
0.1
- Relative Luminous Intensity
V rel
I
0.01
110100
- Forward Current (mA)
96 11588-1
I
F
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
1.1
Red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
rel
I - Relative Intensity
0.2
0.1
0.0
600 610 620 630 640 650 660 670 680 690 700
96 12075-1
λ - Wavelength (nm)
Figure 8. Relative Intensity vs. Wavelength
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4
Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
1.2
1.1
Yellow
IF = 20 mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
- Relative Luminous Intensity
V rel
0.1
I
0.0
550 560 570 580 590 600 610 620 630 640 650
95 10881-1
λ - Wavelength (nm)
Figure 9. Relative Intensity vs. Wavelength
2.10
2.05
IF= 20 mA
2.00
1.95
1.90
1.85
1.80
1.75
1.70
Frel
V- Relative Forward Voltage
1.65
1.60
0 1020 304050607080 90 100
16617
T
- Ambient Temperature (°C)
amb
Red
Figure 10. Relative Forward Voltage vs. Ambient Temperature
2.15
- Relative Forward Voltage (V)
F rel
V
16616
IF = 20 mA
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
0 10203040 50607080 90 100
T
- Ambient Temperature (°C)
amb
Yellow
Figure 11. Relative Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
1.75 ± 0.15
Pin identification
C
+ 0.15
2.8
A
∅ 2.4
+ 0.15
3
Drawing-No. : 6.541-5057.01-4
Issue: 1; 15.07.04
19126-2
Document Number 83227
Rev. 1.4, 25-Sep-07
technical drawings
according to DIN
specifications
0.9
A
0.7
C
0.8
Mounting Pad Layout
4
1.2
4
0.5
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
2.6 (2.8)
area covered with
solder resist
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5
TLMKE340.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.