VISHAY TLMKE340 Technical data

19211
Bicolor SMD LED PLCC-4
FEATURES
• Multicolored
• Luminous intensity categorized
• EIA and ICE standard package
• Compatible with automatic placement equipment
• Suitable for reflow and TTW soldering
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit I
Vmax/IVmin
• Lead (Pb)-free product - RoHS compliant - Lead (Pb)-free soldering
• Jedec level 2a
1.6
TLMKE340.
Vishay Semiconductors
e3
DESCRIPTION
These devices have been designed to meet the increasing demand for surface mounting technology.
The package of the TLMKE340. is the PLCC-4. It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
APPLICATIONS
• Automotive: backlighting in dashboards and switches
• Telecommunication: indicator and backlighting in telephone and fax
• Indicator and backlight for audio and video equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART COLOR, LUMINOUS INTENSITY TECHNOLOGY
TLMKE3400-GS08
TLMKE3401-GS08
Red/yellow, I
Red/yellow, I
> 50 mcd
V
> 63 mcd
V
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 83227 Rev. 1.4, 25-Sep-07
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1
TLMKE340.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS1) TLMKE340.
PARAMETER TEST CONDITION SYMBOL VAL UE UNIT
= 10 μAV
Reverse voltage per diode
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature t 5 s
Thermal resistance junction/ ambient
Note:
1)
T
= 25 °C, unless otherwise specified
amb
I
R
80 °C I
T
amb
10 μsI
t
p
mounted on PC board
(pad size > 16 mm
2
)
T
T
R
F
FSM
P
T
amb
stg
T
sd
thJA
R
V
j
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., RED
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
= 20 mA
I
F
I
= 20 mA λ
F
= 20 mA λ
I
F
I
= 20 mA
F
I
= 20 mA V
F
I
= 10 μAV
R
= 0, f = 1 MHz C
V
R
TLMKE3400
TLMKE3401
I
V
I
V
d
p
ϕ ± 60 deg
F
R
j
6V
30 mA
0.1 A
80 mW
125 °C
- 40 to + 100 °C
- 40 to + 100 °C
260 °C
560 K/W
50 200 mcd
63 160 mcd
630 nm
643 nm
1.9 2.6 V
6V
15 pF
OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., YELLOW
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
= 25 °C, unless otherwise specified
amb
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= 20 mA
I
F
= 20 mA λ
I
F
= 20 mA λ
I
F
= 20 mA
I
F
I
= 20 mA V
F
I
= 10 μAV
R
= 0, f = 1 MHz C
V
R
TLMKE3400
TLMKE3401
I
V
I
V
d
p
80 320 mcd
100 250 mcd
581 588 594 nm
590 nm
ϕ ± 60 deg
F
R
j
6V
22.6V
15 pF
Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, TLMKE34..1)
RED
Vb
80...125 mcd
Y E L
L O W
Wa
100...160 mcd
Wb
125...200 mcd
Xa
160...250 mcd
Xb
200...320 mcd
Note:
1)
followed by 00 or 01
COLOR CLASSIFICATION
GROUP
1 581 584
2 583 586
3 585 588
4 587 590
5 589 592
6 591 594
Ub
50...80 mcd
Va
63...100 mcd
Vb
80...125 mcd
Wa
100...160 mcd
00 00 00 00 00
00
00
00
00 01
00 01
00 01
00 01
00 01
00 01
00 01
00 01
00 01
00 00 00 00 00
DOMINANT WAVELENGTH (NM)
YEL L O W
MAX MAX
125...200 mcd
Wb
00
00
00
TYPICAL CHARACTERISTICS
T
= 25 °C, unless otherwise specified
amb
40
35
30
I - Forward Current (mA)
19476
25
20
15
10
F
5
0
2 chips on
0 1020304050607080 90 100
T
- Ambient Temperature (°C)
amb
Figure 1. Forward Current vs. Ambient Temperature for InGaN
60 °C
1 chip on
80 °C
1000
- Forward Current (mA) I
16621
tP/T = 0.01
0.02
0.05
100
0.2
0.5
FM
10
0.01 0.1 1 10 100
1
tP - Pulse Length (ms)
0.1
Figure 2. Forward Current vs. Pulse Duration
Document Number 83227 Rev. 1.4, 25-Sep-07
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TLMKE340.
Vishay Semiconductors
10° 20°
1.0
0.9
0.8
- Relative Luminous Intensity
0.7
V rel
I
0.4 0.2 0 0.2 0.4
0.6
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
30°
40°
50°
60°
70°
8
0.6
2.0
1.8
1.6
Red
1.4
1.2
1.0
0.8
0.6
0.4
- Relative Luminous Intensity
0.2
V rel
I
0.0 0 1020304050607080 90 100
16618-1
T
- Ambient Temperature (°C)
amb
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
100
Yellow/Red
10
- Forward Current (mA)
F
I
1
1.0 1.5 2.0 2.5 3.0
95 10878-1
V
- Forward Voltage (V)
F
Figure 4. Forward Current vs. Forward Voltage
1.6
1.4
IF = 20 mA
Yellow
1.2
1.0
0.8
0.6
0.4
- Relative Luminous Intensity
0.2
V rel
I
0.0 0 1020304050607080 90 100
95 10880-1
T
- Ambient Temperature (°C)
amb
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
10
Yellow/Red
1.0
0.1
- Relative Luminous Intensity
V rel
I
0.01 1 10 100
- Forward Current (mA)
96 11588-1
I
F
Figure 7. Relative Luminous Intensity vs. Forward Current
1.2
1.1
Red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
rel
I - Relative Intensity
0.2
0.1
0.0 600 610 620 630 640 650 660 670 680 690 700
96 12075-1
λ - Wavelength (nm)
Figure 8. Relative Intensity vs. Wavelength
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Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
1.2
1.1
Yellow
IF = 20 mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
- Relative Luminous Intensity
V rel
0.1
I
0.0 550 560 570 580 590 600 610 620 630 640 650
95 10881-1
λ - Wavelength (nm)
Figure 9. Relative Intensity vs. Wavelength
2.10
2.05
IF= 20 mA
2.00
1.95
1.90
1.85
1.80
1.75
1.70
Frel
V - Relative Forward Voltage
1.65
1.60 0 1020 304050607080 90 100
16617
T
- Ambient Temperature (°C)
amb
Red
Figure 10. Relative Forward Voltage vs. Ambient Temperature
2.15
- Relative Forward Voltage (V)
F rel
V
16616
IF = 20 mA
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65 0 10203040 50607080 90 100
T
- Ambient Temperature (°C)
amb
Yellow
Figure 11. Relative Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS in millimeters
3.5 ± 0.2
1.75 ± 0.15
Pin identification
C
+ 0.15
2.8
A
2.4
+ 0.15
3
Drawing-No. : 6.541-5057.01-4 Issue: 1; 15.07.04
19126-2
Document Number 83227 Rev. 1.4, 25-Sep-07
technical drawings according to DIN specifications
0.9
A
0.7
C
0.8
Mounting Pad Layout
4
1.2
4
0.5
1.6 (1.9)
Dimensions: IR and Vaporphase
(Wave Soldering)
2.6 (2.8)
area covered with solder resist
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TLMKE340.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and
expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such
unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 83227
Rev. 1.4, 25-Sep-07
Legal Disclaimer Notice
Vishay

Disclaimer

All product specifications and data are subject to change without notice.
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Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
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