VISHAY TLMKE340 Technical data

19211

Bicolor SMD LED PLCC-4

FEATURES

• SMD LED with exceptional brightness

• Multicolored

• Luminous intensity categorized

• EIA and ICE standard package

• Compatible with automatic placement
equipment

• Suitable for reflow and TTW soldering

• Available in 8 mm tape

• Low profile package

• Non-diffused lens: excellent for coupling to light
pipes and backlighting

• Low power consumption

• Luminous intensity ratio in one packaging unit
I

Vmax/IVmin

• Lead (Pb)-free product - RoHS compliant - Lead
(Pb)-free soldering

• Jedec level 2a

≤ 1.6

TLMKE340.

Vishay Semiconductors

e3

DESCRIPTION

These devices have been designed to meet the
increasing demand for surface mounting technology.

The package of the TLMKE340. is the PLCC-4.
It consists of a lead frame which is embedded in a

white thermoplast. The reflector inside this package is
filled up with clear epoxy.

This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.

PRODUCT GROUP AND PACKAGE DATA

APPLICATIONS

• Automotive: backlighting in dashboards and
switches

• Telecommunication: indicator and backlighting in
telephone and fax

• Indicator and backlight for audio and video
equipment

• Indicator and backlight in office equipment

• Flat backlight for LCDs, switches and symbols

• General use

• Product group: LED

• Package: SMD PLCC-4

• Product series: bicolor

• Angle of half intensity: ± 60°

PARTS TABLE

PART COLOR, LUMINOUS INTENSITY TECHNOLOGY

TLMKE3400-GS08

TLMKE3401-GS08

Red/yellow, I

Red/yellow, I

> 50 mcd

V

> 63 mcd

V

AlInGaP on GaAs

AlInGaP on GaAs

Document Number 83227
Rev. 1.4, 25-Sep-07

www.vishay.com

1

TLMKE340.

Vishay Semiconductors

ABSOLUTE MAXIMUM RATINGS1) TLMKE340.

PARAMETER TEST CONDITION SYMBOL VAL UE UNIT

= 10 μAV

Reverse voltage per diode

DC Forward current per diode

Surge forward current per diode

Power dissipation per diode

Junction temperature

Operating temperature range

Storage temperature range

Soldering temperature t ≤ 5 s

Thermal resistance junction/
ambient

Note:

1)

T

= 25 °C, unless otherwise specified

amb

I

R

≤ 80 °C I

T

amb

≤ 10 μsI

t

p

mounted on PC board

(pad size > 16 mm

2

)

T

T

R

F

FSM

P

T

amb

stg

T

sd

thJA

R

V

j

OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., RED

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

Luminous intensity

Dominant wavelength

Peak wavelength

Angle of half intensity

Forward voltage

Reverse voltage

Junction capacitance

Note:

1)

T

= 25 °C, unless otherwise specified

amb

= 20 mA

I

F

I

= 20 mA λ

F

= 20 mA λ

I

F

I

= 20 mA

F

I

= 20 mA V

F

I

= 10 μAV

R

= 0, f = 1 MHz C

V

R

TLMKE3400

TLMKE3401

I

V

I

V

d

p

ϕ ± 60 deg

F

R

j

6V

30 mA

0.1 A

80 mW

125 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

560 K/W

50 200 mcd

63 160 mcd

630 nm

643 nm

1.9 2.6 V

6V

15 pF

OPTICAL AND ELECTRICAL CHARACTERISTICS1) TLMKE340., YELLOW

PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT

Luminous intensity

Dominant wavelength

Peak wavelength

Angle of half intensity

Forward voltage

Reverse voltage

Junction capacitance

Note:

1)

T

= 25 °C, unless otherwise specified

amb

www.vishay.com
2

= 20 mA

I

F

= 20 mA λ

I

F

= 20 mA λ

I

F

= 20 mA

I

F

I

= 20 mA V

F

I

= 10 μAV

R

= 0, f = 1 MHz C

V

R

TLMKE3400

TLMKE3401

I

V

I

V

d

p

80 320 mcd

100 250 mcd

581 588 594 nm

590 nm

ϕ ± 60 deg

F

R

j

6V

22.6V

15 pF

Document Number 83227

Rev. 1.4, 25-Sep-07

TLMKE340.

Vishay Semiconductors

LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, TLMKE34..1)

RED

Vb

80...125 mcd

Y
E
L

L
O
W

Wa

100...160 mcd

Wb

125...200 mcd

Xa

160...250 mcd

Xb

200...320 mcd

Note:

1)

followed by 00 or 01

COLOR CLASSIFICATION

GROUP

1 581 584

2 583 586

3 585 588

4 587 590

5 589 592

6 591 594

Ub

50...80 mcd

Va

63...100 mcd

Vb

80...125 mcd

Wa

100...160 mcd

00 00 00 00 00

00

00

00

00
01

00
01

00
01

00
01

00
01

00
01

00
01

00
01

00
01

00 00 00 00 00

DOMINANT WAVELENGTH (NM)

YEL L O W

MAX MAX

125...200 mcd

Wb

00

00

00

TYPICAL CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

40

35

30

I - Forward Current (mA)

19476

25

20

15

10

F

5

0

2 chips on

0 1020304050607080 90 100

T

- Ambient Temperature (°C)

amb

Figure 1. Forward Current vs. Ambient Temperature for InGaN

60 °C

1 chip on

80 °C

1000

- Forward Current (mA)
I

16621

tP/T = 0.01

0.02

0.05

100

0.2

0.5

FM

10

0.01 0.1 1 10 100

1

tP - Pulse Length (ms)

0.1

Figure 2. Forward Current vs. Pulse Duration

Document Number 83227
Rev. 1.4, 25-Sep-07

www.vishay.com

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