VISHAY TEMT7100X01 Technical data

Silicon Phototransistor in 0805 Package

20043-1

DESCRIPTION

TEMT7100X01 is a silicon NPN epitaxial planar
phototransistor with daylight blocking filter in a miniature,
black 0805 package for surface mounting. Filter bandwidth is
matched with 830 nm to 950 nm IR emitters.

TEMT7100X01

Vishay Semiconductors

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• AEC-Q101 qualified

• High photo sensitivity

• Daylight blocking filter matches with 830 nm to
950 nm IR emitters

• Angle of half sensitivity: ϕ = ± 60°

• Package matched with IR emitter series VSMB1940X01

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications

APPLICATIONS

• Detector in automotive applications

• Photo interrupters

• Miniature switches

• Counters

• Encoders

• Position sensors

PRODUCT SUMMARY

COMPONENT I

TEMT7100X01 225 to 675 ± 60 750 to 1010

Note

Test condition see table “Basic Characteristics”

(µA) ϕ (deg) λ

caE

0.5

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TEMT7100X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Power power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature Acc. reflow profile fig. 7 T

Thermal resistance junction/ambient Acc. J-STD-051 R

Note

T

= 25 °C, unless otherwise specified

amb

Document Number: 81770 For technical questions, contact: [e-mail]
Rev. 1.0, 12-May-09 1

≤ 55 °C P

amb

CEO

ECO

C

V

j

amb

stg

sd

thJA

20 V

7V

20 mA

100 mW

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

270 K/W

www.vishay.com

TEMT7100X01

Vishay Semiconductors

120

100

80

60

R

= 270 K/W

thJA

40

- Power Dissipation (mW)

V

20

P

0

0 10203040 50607080 90 100

21331

T

- Ambient Temperature (°C)

amb

Silicon Phototransistor in 0805 Package

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Collector emitter breakdown voltage I

Collector dark current V

Collector emitter capacitance V

E

Collector light current

e

Angle of half sensitivity ϕ ± 60 deg

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

Collector emitter saturation voltage I

Note

= 25 °C, unless otherwise specified

T

amb

= 0.1 mA V

C

= 5 V, E = 0 I

CE

= 0 V, f = 1 MHz, E = 0 C

CE

= 1 mW/cm2, λ = 950 nm,

V

= 5 V

CE

= 0.05 mA V

C

CEO

CEO

CEO

I

CA

p

0.5

CEsat

20 V

1 100 nA

25 pF

225 450 675 µA

870 nm

750 to 1010 nm

0.4 V

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

10 000

IF = 0

1000

100

10

VCE = 70 V

V

= 25 V

CE

V

= 5 V

CE

- Collector Dark Current (nA)

CE0

I

1

0 1020304050607080 90 100

20594

- Ambient Temperature (°C)

T

amb

Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Collector Light Current vs. Irradiance

www.vishay.com For technical questions, contact: [e-mail]
2 Rev. 1.0, 12-May-09

10

1

0.1

0.01

- Collector Light Current (mA)

ca

I

0.001

0.01 0.1 1 10

21551

Ee - Irradiance (mW/cm²)

VCE = 5 V

Document Number: 81770

TEMT7100X01

Silicon Phototransistor in 0805 Package

100

90

80

70

60

50

40

30

- Rise/Fall Time (µs)

f

t

/t

r

t

20599

r

20

10

0

0 250 500 750 1000 1250 1500 1750 2000

Fig. 4 - Rise/Fall Time vs. Collector Current

1.2

1.0

RL = 100 Ω

t

f

- Collector Current (µA)

I

C

Vishay Semiconductors

0°

10° 20°

1.0

0.9

0.8

- Relative Radiant Intensity

e rel

0.7

I

0.4 0.2 0

0.6

94 8013

Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement

30°

40°

50°

60°

70°

80°

ϕ - Angular Displacement

0.8

0.6

0.4

- Relative Spectral Sensitivity

0.2

rel

S(λ)

0

600 700 800 900 1000 1100

21552

λ - Wavelength (nm)

Fig. 5 - Relative Spectral Sensitivity vs. Wavelength

REFLOW SOLDER PROFILE

300

255 °C

250

240 °C
217 °C

200

150

100

max. 120 s

Temperature (°C)

50

max. ramp up 3 °C/s

0

0 50 100 150 200 250 300

19841

max. ramp down 6 °C/s

Time (s)

Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D

max. 260 °C

245 °C

max. 30 s

max. 100 s

DRYPACK

Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T

< 30 °C, RH < 60 %

amb

Moisture sensitivity level 3, acc. to J-STD-020.

DRYING

In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.

Document Number: 81770 For technical questions, contact: [e-mail]

www.vishay.com

Rev. 1.0, 12-May-09 3