VISHAY TEMT3700 Technical data
Silicon NPN Phototransistor
Description
TEMT3700 is a high speed silicon NPN epitaxial
planar phototransistor in a miniature PL–CC–2 package for surface mounting on printed boards. Due to its
waterclear epoxy lens the device is sensitive to visible
and near infrared radiation.
Features
D
PL–CC–2 SMD package
D
Extra wide viewing angle ϕ = ± 60
D
Package notch = collector
D
Base terminal not connected
D
Fast response times
D
Suitable for visible and near infrared radiation
D
Matches with IR emitter TSMS3700
°
TEMT3700
Vishay Semiconductors
94 8553
Applications
Miniature switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current tp/T x 0.1, tp x 10ms I
Total Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Soldering Temperature t x 3 s T
Thermal Resistance Junction/Ambient R
x 55 °C P
amb
CEO
ECO
C
CM
tot
j
stg
sd
thJA
70 V
5 V
50 mA
100 mA
100 mW
100
–55...+100
260
450 K/W
°
C
°
C
°
C
Document Number 81555
Rev. 3, 10-Apr-01
www.vishay.com
1 (6)
TEMT3700
Vishay Semiconductors
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C
Collector Light Current Ee = 1 mW/cm2,
Angle of Half Sensitivity ϕ ±60 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Rise Time / Fall Time VS = 5 V, IC = 1 mA,
Cut–Off Frequency VS = 5 V, IC = 2 mA,
IC = 1 mA V
l
= 950 nm, VCE = 5 V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 0.1 mA
l
= 950 nm, RL = 1 k
W
VS = 5 V, IC = 1 mA,
l
= 950 nm, R
R
= 100
L
W
= 100
L
W
(BR)CE
O
CEO
CEO
I
ca
l
p
l
0.5
V
CEsat
tr / t
tr / t
f
c
70 V
1 200 nA
3 pF
0.25 0.5 mA
830 nm
620...980 nm
0.15 0.3 V
f
f
6
2
180 kHz
m
s
m
s
Typical Characteristics (T
125
100
75
50
25
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8308
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
VCE=20V
40 60 80
T
– Ambient Temperature ( °C )
amb
CEO
I – Collector Dark Current ( nA )
94 8304
2
10
1
10
0
10
20
R
thJA
100
Figure 2. Collector Dark Current vs. Ambient Temperature
100
www.vishay.com
2 (6) Rev. 3, 10-Apr-01
Document Number 81555
TEMT3700
Vishay Semiconductors
2.0
1.8
1.6
VCE=5V
E
=1mW/cm
e
l
=950nm
2
1.4
1.2
1.0
ca rel
0.8
I – Relative Collector Current
0.6
0
20 40 60 80
94 8239
T
– Ambient Temperature ( °C )
amb
Figure 3. Relative Collector Current vs.
Ambient Temperature
10
TEMT 3704
1
0.1
100
10
8
f=1MHz
6
4
2
CEO
C – Collector Emitter Capacitance ( pF )
0
0.1 1 10
94 8294
– Collector Emitter Voltage ( V )
V
CE
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
8
m
6
4
VCE=5V
R
=100
L
l
=950nm
W
100
0.01
ca
I – Collector Light Current ( mA )
l
=950nm
0.001
0.01 0.1 1
VCE=5V
94 8316
Ee – Irradiance ( mW/cm2 )
Figure 4. Collector Light Current vs. Irradiance
10
l
=950nm
1
Ee=1mW/cm
0.5mW/cm
ca
I – Collector Light Current ( mA )
0.2mW/cm
0.1
0.1 1 10
94 8317
VCE – Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
t
2
off
on
t / t – Turn on / Turn off Time ( s )
94 8293
0
024 6 12
IC – Collector Current ( mA )
10
off
t
on
108
14
Figure 7. Turn On/Turn Off Time vs. Collector Current
1.0
0.8
0.6
2
2
2
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
0
100
400 600 1000
l
– Wavelength ( nm )94 8348
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
Document Number 81555
Rev. 3, 10-Apr-01
www.vishay.com
3 (6)
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