VISHAY TEMT1000, TEMT1020, TEMT1030, TEMT1040 Technical data

VISHAY

Silicon Phototransistor

TEMT1000/1020/1030/1040

Vishay Semiconductors

Description

TEMT1000 series are high speed and high sensitive
silicon NPN epitaxial planar phototransistors in SMD
package with dome lens. Due to integrated Daylight
filter devices are sensitive for IR radiation only.

TEMT1000

TEMT1030

Features

• High photo sensitivity

• Fast response times

• Angle of half sensitivity ϕ = ± 15°

• Daylight filter matched to IR Emitters

(λ = 870 nm to 950 nm)

• Versatile terminal configurations

• Matched IR Emitter series: TSML1000

IR Detector for Daylight application
Photo interrupters

Applications

Detector in electronic control and drive circuits

Counter
Encoder

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Te s t co n di ti o n Symbol Value Unit

Emitter Collector Voltage V

Collector Current I

Peak Collector Current tp/T = 0.5, tp ≤ 10 ms I

Total Power Dissipation T

Junction Temperature T

Storage Temperature Range T

Operating Temperature Range T

Soldering Temperature t ≤ 5 s T

Thermal Resistance Junction/Ambient R

≤ 55 °C P

amb

ECO

C

CM

tot

stg

amb

sd

thJA

TEMT1020

TEMT1040

100 mA

100 mW

j

100 °C

- 40 to + 100 °C

- 40 to + 85 °C

<260 °C

400 K/W

16757

5 V

50 mA

Basic Characteristics

T

= 25 °C, unless otherwise specified

amb

Paramete r Test c o n d ition Symbol Min Typ . Max Unit

Collector Emitter Voltage IC = 1 mA V

Collector Dark Current VCE = 20 V, E = 0 I

Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E=0 C

Angle of Half Sensitivity ϕ ±15 deg

Wavelength of Peak Sensitivity λ

Range of Spectral Bandwidth λ

Collector Emitter Saturation
Vo ltage

Tur n - O n T i m e VS = 5 V, IC = 5 mA,

Document Number 81554

Rev. 5, 21-May-03

Ee = 1 mW/cm2,
λ = 950 nm, I

R

= 100 Ω

L

= 0.1 mA

C

V

CEO

CEO

CEO

p

0.5

CEsat

t

on

70 V

1 200 nA

3 pF

950 nm

750 to 980 nm

0.3 V

2.0 µs

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TEMT1000/1020/1030/1040

Vishay Semiconductors

Paramete r Test condition Symbol Min Typ . Max Unit

Turn-Off Time VS = 5 V, IC = 5 mA,

R

= 100 Ω

L

Cut-Off Frequency VS = 5 V, IC = 5 mA,

R

= 100 Ω

L

Collector Light Current

Ee = 1 mW/cm2,
λ = 950 nm, V

CE

= 5V

VISHAY

t

off

f

c

I

ca

2 7.0 mA

2.3 µs

180 kHz

Typical Characteristics (T

4

10

3

10

VCE=20V

40 60 80

- Ambient Temperature ( ° C)

amb

CEO

I - Collector Dark Current ( nA )

94 8304

10

10

10

2

1

0

20

T

= 25 °C unless otherwise specified)

amb

100

Figure 1. Collector Dark Current vs. Ambient Temperature

2.0

1.8

ca rel

I - Relative Collector Current

94 8239

1.6

1.4

1.2

1.0

0.8

0.6

VCE=5V
= 1 mW/cm

E

e

ı = 950 nm

λ

0

20 40 60 80

T

amb

2

100

- Ambient Temperature ( ° C)

10

8

6

4

2

0

CEO

C - Collector Emitter Capacitance ( pF )

0.1 1 1 0

V

94 8294

- Collector Emitter Voltage ( V )

CE

f=1MHz

100

Figure 3. Collector Emitter Capacitance vs. Collector Emitter

Voltage

8

VCE=5V

R

= 100

L

= 950 nm

λ

Ω

t

off

t

on

t /t - Turn on / Turn off Time ( µ s)

94 8293

6

4

2

off

on

0

2046 1412108

IC- Collector Current ( mA )

Figure 2. Relative Collector Current vs. Ambient Temperature

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2

Figure 4. Turn On/Turn Off Time vs. Collector Current

Document Number 81554

Rev. 5, 21-May-03

VISHAY

TEMT1000/1020/1030/1040

Vishay Semiconductors

°

0

10°20

1.0

0.9

0.8

rel

S - Relative Sensitivity

0.7

0.4 0.2 0 0.2 0.4

0.6

94 8248

Figure 5. Relative Radiant Sensitivity vs. Angular Displacement

°

30°

40°

50°

60°

70°

80°

0.6

Document Number 81554

Rev. 5, 21-May-03

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3