VISHAY TEMD7000X01 Technical data

Silicon PIN Photodiode

21841

DESCRIPTION

TEMD7000X01 is a high speed and high sensitive PIN
photodiode. It is a miniature surface mount device (SMD)
including the chip with a 0.23 mm
visible and near infrared radiation.

2

sensitive area detecting

TEMD7000X01

Vishay Semiconductors

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• Radiant sensitive area (in mm

• AEC-Q101 qualified

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 60°

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade Product
requirements at: www.vishay.com/applications

2

): 0.23

APPLICATIONS

• High speed photo detector

PRODUCT SUMMARY

COMPONENT Ira (µA) ϕ (deg) λ

TEMD7000X01 3 ± 60 350 to 1120

Note

Test conditions see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TEMD7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature Acc. reflow solder profile fig. 8 T

Thermal resistance junction/ambient Acc. J-STD-051 R

Note

= 25 °C, unless otherwise specified

T

amb

≤ 25 °C P

amb

R

V

j

amb

stg

sd

thJA

60 V

215 mW

100 °C

- 40 to + 100 °C

- 40 to + 100 °C

260 °C

270 K/W

Document Number: 81951 For technical questions, contact: [e-mail]
Rev. 1.2, 16-Dec-09 1

www.vishay.com

TEMD7000X01

Vishay Semiconductors

Silicon PIN Photodiode

BASIC CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage I

Breakdown voltage I

Reverse dark current V

Diode capacitance

Open circuit voltage E

Temperature coefficient of V

o

Short circuit current E

Temperature coefficient of I

k

Reverse light current

V

V

e

Ee = 1 mW/cm2, λ = 950 nm TK

e

Ee = 1 mW/cm2, λ = 950 nm TK

E

e

Angle of half sensitivity ϕ ± 60 deg

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

Rise time

Fall time

Note

= 25 °C, unless otherwise specified

T

amb

= 50 mA V

F

= 100 µA, E = 0 V

R

= 10 V, E = 0 I

R

= 0 V, f = 1 MHz, E = 0 C

R

= 5 V, f = 1 MHz, E = 0 C

R

= 1 mW/cm2, λ = 950 nm V

= 1 mW/cm2, λ = 950 nm I

= 1 mW/cm2, λ = 950 nm,

V

= 5 V

R

V

= 10 V, RL = 1 kΩ,

R

λ = 820 nm

V

= 10 V, RL = 1 kΩ,

R

λ = 820 nm

(BR)

ro

k

I

ra

0.1

t

r

t

f

F

1V

32 V

110nA

D

D

o

Vo

4pF

1.3 pF

350 mV

- 2.6 mV/K

3µA

Ik

0.1 %/K

3µA

p

900 nm

350 to 1120 nm

100 ns

100 ns

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

- Relative Reverse Light Current

ra, rel

I

94 8416

1.4

1.2

1.0

0.8

0.6

VR = 5 V

λ = 950 nm

4020

0

T

- Ambient Temperature (°C)

amb

60

1000

100

10

- Reverse Dark Current (nA)

ro

I

1

94 8427

20

T

- Ambient Temperature (°C)

amb

VR = 10 V

806040

100

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

10080

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 81951

2 Rev. 1.2, 16-Dec-09

TEMD7000X01

10

1

0.1

VR = 5 V

0.01

- Reverse Light Current (µA)

ra

I

0.001

0.01 0.1 1 10

21535

Ee - Irradiance (mW/cm2 )

λ = 950 nm

Fig. 3 - Reverse Light Current vs. Irradiance

100

Silicon PIN Photodiode

- Relative Spectral Sensitivity

S (λ)

21553

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

Vishay Semiconductors

1.2

1.0

8

0.

0.6

0.4

rel

0.2

0

400 500 600 700 800 900 1000 1100

λ - Wavelength (nm)

0°

10° 20°

30°

λ = 950 nm

10

2

1 mW/cm

- Reverse Light Current (µA)

ra

I

1

0.1 1 10 100

17026

VR - Reverse Voltage

Fig. 4 - Reverse Light Current vs. Reverse Voltage

8

6

E = 0

f = 1 MHz

4

2

- Diode Capacitance (pF)

D

C

0

0.1

94 8430

1

10

VR- Reverse Voltage (V)

100

1.0

0.9

0.8

- Relative Radiant Intensity

0.7

e, rel

I

0.4 0.2 0

0.6

94 8013

40°

50°

60°

70°

80°

Fig. 7 - Relative Radiant Intensity vs. Angular Displacement

ϕ - Angular Displacement

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Document Number: 81951 For technical questions, contact: [e-mail]

www.vishay.com

Rev. 1.2, 16-Dec-09 3

TEMD7000X01

Vishay Semiconductors

REFLOW SOLDER PROFILE

300

255 °C

250

240 °C
217 °C

200

150

100

Temperature (°C)

50

0

0 50 100 150 200 250 300

19841

Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020

max. 120 s

max. ramp up 3 °C/s

Time (s)

PACKAGE DIMENSIONS in millimeters

max. 260 °C

245 °C

max. 30 s

max. 100 s

max. ramp down 6 °C/s

Silicon PIN Photodiode

DRYPACK

Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.

FLOOR LIFE

Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: T
Moisture sensitivity level 3, acc. to J-STD-020.

DRYING

In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.

< 30 °C, RH < 60 %

amb

20018

www.vishay.com For technical questions, contact: [e-mail]
4 Rev. 1.2, 16-Dec-09

Document Number: 81951

TEMD7000X01

Silicon PIN Photodiode

BLISTER TAPE DIMENSIONS in millimeters

Vishay Semiconductors

21501

Document Number: 81951 For technical questions, contact: [e-mail]
Rev. 1.2, 16-Dec-09 5

www.vishay.com

TEMD7000X01

Vishay Semiconductors

REEL DIMENSIONS in millimeters

Silicon PIN Photodiode

20875

www.vishay.com For technical questions, contact: [e-mail]
6 Rev. 1.2, 16-Dec-09

Document Number: 81951

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1