VISHAY TEMD7000X01 Technical data

Silicon PIN Photodiode

21841

DESCRIPTION

TEMD7000X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device (SMD) including the chip with a 0.23 mm visible and near infrared radiation.

2

sensitive area detecting

TEMD7000X01

Vishay Semiconductors

FEATURES

• Package type: surface mount

• Package form: 0805

• Dimensions (L x W x H in mm): 2 x 1.25 x 0.85

• Radiant sensitive area (in mm

• AEC-Q101 qualified

• High photo sensitivity

• High radiant sensitivity

• Suitable for visible and near infrared radiation

• Fast response times

• Angle of half sensitivity: ϕ = ± 60°

• Floor life: 168 h, MSL 3, acc. J-STD-020

• Lead (Pb)-free reflow soldering

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

• Find out more about Vishay’s Automotive Grade Product requirements at: www.vishay.com/applications

2

): 0.23

APPLICATIONS

• High speed photo detector

PRODUCT SUMMARY

COMPONENT Ira (µA) ϕ (deg) λ

TEMD7000X01 3 ± 60 350 to 1120

Note

Test conditions see table “Basic Characteristics”

0.1

(nm)

ORDERING INFORMATION

ORDERING CODE PACKAGING REMARKS PACKAGE FORM

TEMD7000X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805

Note

MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Power dissipation T

Junction temperature T

Operating temperature range T

Storage temperature range T

Soldering temperature Acc. reflow solder profile fig. 8 T

Thermal resistance junction/ambient Acc. J-STD-051 R

Note

= 25 °C, unless otherwise specified

T

amb

≤ 25 °C P

amb

R

V

j

amb

stg

sd

thJA

60 V

215 mW

100 °C

- 40 to + 100 °C

260 °C

270 K/W

Document Number: 81951 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.2, 16-Dec-09 1

www.vishay.com

TEMD7000X01

Vishay Semiconductors

Silicon PIN Photodiode

BASIC CHARACTERISTICS

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage I

Breakdown voltage I

Reverse dark current V

Diode capacitance

Open circuit voltage E

Temperature coefficient of V

o

Short circuit current E

Temperature coefficient of I

k

Reverse light current

V

e

Ee = 1 mW/cm2, λ = 950 nm TK

e

Ee = 1 mW/cm2, λ = 950 nm TK

E

e

Angle of half sensitivity ϕ ± 60 deg

Wavelength of peak sensitivity λ

Range of spectral bandwidth λ

Rise time

Fall time

Note

= 25 °C, unless otherwise specified

T

amb

= 50 mA V

F

= 100 µA, E = 0 V

R

= 10 V, E = 0 I

R

= 0 V, f = 1 MHz, E = 0 C

R

= 5 V, f = 1 MHz, E = 0 C

R

= 1 mW/cm2, λ = 950 nm V

= 1 mW/cm2, λ = 950 nm I

= 1 mW/cm2, λ = 950 nm,

V

= 5 V

R

V

= 10 V, RL = 1 kΩ,

R

λ = 820 nm

V

= 10 V, RL = 1 kΩ,

R

λ = 820 nm

(BR)

ro

k

I

ra

0.1

t

r

t

f

F

1V

32 V

110nA

D

o

Vo

4pF

1.3 pF

350 mV

- 2.6 mV/K

3µA

Ik

0.1 %/K

3µA

p

900 nm

350 to 1120 nm

100 ns

BASIC CHARACTERISTICS

T

= 25 °C, unless otherwise specified

amb

- Relative Reverse Light Current

ra, rel

I

94 8416

1.4

1.2

1.0

0.8

0.6

VR = 5 V

λ = 950 nm

4020

0

T

- Ambient Temperature (°C)

amb

60

1000

100

10

- Reverse Dark Current (nA)

ro

I

1

94 8427

20

T

- Ambient Temperature (°C)

amb

VR = 10 V

806040

100

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

10080

www.vishay.com For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81951

2 Rev. 1.2, 16-Dec-09

TEMD7000X01

10

1

0.1

VR = 5 V

0.01

- Reverse Light Current (µA)

ra

I

0.001

0.01 0.1 1 10

21535

Ee - Irradiance (mW/cm2 )

λ = 950 nm

Fig. 3 - Reverse Light Current vs. Irradiance

100

Silicon PIN Photodiode

- Relative Spectral Sensitivity

S (λ)

21553

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength

Vishay Semiconductors

1.2

1.0

8

0.

0.6

0.4

rel

0.2

0

400 500 600 700 800 900 1000 1100

λ - Wavelength (nm)

0°

10° 20°

30°

λ = 950 nm

10

2

1 mW/cm

- Reverse Light Current (µA)

ra

I

1

0.1 1 10 100

17026

VR - Reverse Voltage

Fig. 4 - Reverse Light Current vs. Reverse Voltage

8

6

E = 0

f = 1 MHz

4

2

- Diode Capacitance (pF)

D

C

0

0.1

94 8430

1

10

VR- Reverse Voltage (V)

100

1.0

0.9

0.8

- Relative Radiant Intensity

0.7

e, rel

I

0.4 0.2 0

0.6

94 8013

40°

50°

60°

70°

80°

Fig. 7 - Relative Radiant Intensity vs. Angular Displacement

ϕ - Angular Displacement

Fig. 5 - Diode Capacitance vs. Reverse Voltage

Document Number: 81951 For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com

Rev. 1.2, 16-Dec-09 3