VISHAY TCLT10 Technical data

VISHAY

C

E

AC

C

17295

V

D E

1

2

34

TCLT10.. Series

Vishay Semiconductors

Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat
Package

Features

• SMD Low profile 4 lead package

• High Isolation 5000 V

• CTR flexibility available see order information

• Special construction

• Extra low coupling capacitance

• Connected base

• DC input with transistor output

RMS

Agency Approvals

• UL 1577 Recognized, File No. E76222 - Double
Protection

• CSA (C-UL) 1577 Recognized File No. E- 76222 ­Double Protection

• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN
60950 (BS 7002), Certificate number 7081 and
7402

• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending

• FIMKO (SETI): EN 60950, Certificate No. 11027

•NOTE:
See the Safety Standard Approval List "Agency
Table" for more detailed information.

Applications

• Switchmode power supplies

• Computer peripheral interface

• Microprocessor system interface

Description

The TCLT10.. Series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emit­ting diode in a 4-lead SOP4L package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

Order Information

Part Remarks

TCLT1000 CTR 50 - 600 %, SMD-4

TCLT1002 CTR 63 - 125 %, SMD-4

TCLT1003 CTR 100 - 200 %, SMD-4

TCLT1005 CTR 50 - 150 %, SMD-4

TCLT1006 CTR 100 - 300 %, SMD-4

TCLT1007 CTR 80 - 160 %, SMD-4

TCLT1008 CTR 130 - 260 %, SMD-4

TCLT1009 CTR 200 - 400 %, SMD-4

NOTE: Available only on tape and reel.

Document Number 83515

Rev. 1.7, 20-Apr-04

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TCLT10.. Series

VISHAY

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

≤ 10 µsI

p

R

F

FSM

diss

j

6V

60 mA

1.5 A

100 mW

125 °C

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

CEO

ECO

C

CM

diss

j

70 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) V

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature T

T

ISO

tot

amb

stg

sld

5000 V

250 mW

- 40 to + 100 °C

- 40 to + 100 °C

240 °C

RMS

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= ± 50 mA V

F

= 0 V, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter cut-off current V

= 1 mA V

C

= 100 µAV

E

= 20 V, If = 0, E = 0 I

CE

CEO

ECO

CEO

70 V

7V

10 100 nA

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Document Number 83515

Rev. 1.7, 20-Apr-04

VISHAY

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

R

= 100 Ω

L

VCE = 5 V, IF = 5 mA TCLT1000 CTR 50 600 %

V

= 5 V, IF = 10 mA TCLT1002 CTR 63 125 %

CE

TCLT1003 CTR 100 200 %

= 5 V, IF = 1 mA TCLT1002 CTR 22 45 %

V

CE

TCLT1003 CTR 34 70 %

= 5 V, IF = 5 mA TCLT1005 CTR 50 150 %

V

CE

TCLT1006 CTR 100 300 %

TCLT1007 CTR 80 160 %

TCLT1008 CTR 130 260 %

TCLT1009 CTR 200 400 %

CEsat

f

c

k

TCLT10.. Series

Vishay Semiconductors

0.3 V

110 kHz

0.3 pF

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward current I

F

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Power dissipation P

diss

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Rated impulse voltage V

Safety temperature T

IOTM

si

130 mA

265 mW

8kV

150 °C

Document Number 83515

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TCLT10.. Series

Vishay Semiconductors

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p. Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

300

250

200

150

100

100 %, t

t

= 60 s, t

Tr

(see figure 2)

= 500 V R

IO

= 500 V, T

V

IO

= 500 V, T

V

IO

(construction test only)

Phototransistor
Psi ( mW )

test

= 1 s V

= 10 s,

test

= 100 °C R

amb

= 150 °C

amb

V

pd

IOTM

V

pd

IO

IO

R

IO

V

IOTM

V

IOWM

V

IORM

VISHAY

1.6 kV

8kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s

, t4 = 1 s

t

3

t

= 10 s

test

= 12 s

t

stres

V

Pd

Ω

Ω

Ω

50

tot

P – Total Power Dissipation ( mW )

0

IR-Diode
Isi ( mA )

0 25 50 75 125

94 9182

Tsi – Safety Temperature ( °C )

Fig. 1 Derating diagram

100

150

13930

0

t

1

tTr = 60 s

t

2

t

t3t

test

t

stres

4

t

Fig. 2 Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

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Document Number 83515

Rev. 1.7, 20-Apr-04

VISHAY

Switching Characteristics

Parameter Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Turn-on time V

Storage time V

Fall tim e V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 3)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 4)

TCLT10.. Series

Vishay Semiconductors

t

d

t

r

t

on

t

s

t

f

t

off

t

on

t

off

3.0 µs

3.0 µs

6.0 µs

0.3 µs

4.7 µs

5.0 µs

9.0 µs

10.0 µs

+ 5 V

IC = 2 mA;

Channel I

Channel II

95 10804

I

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

I

F

F

50 W 100 W

Fig. 3 Test circuit, non-saturated operation

1k

Ω

+5V

I

C

Channel I

Channel II

0

RG=50
t

p

= 0.01

T

tp=50 s

I

F

Ω

µ

IF=10mA

Ω

50

adjusted through
input amplitude

Oscilloscope
R

= 1 MW

L

= 20 pF

C

L

Oscilloscope

Ω

M1

R

≥

L

20 pF

C

≤

L

I

F

0

I

C

100%

90%

10%

0

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

t

r

t

d

t

on

pulse duration
delay time
rise time

Fig. 5 Switching Times

96 11698

t

p

t

t

f

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

t

t

storage time
fall time

95 10843

Fig. 4 Test circuit, saturated operation

Document Number 83515

Rev. 1.7, 20-Apr-04

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TCLT10.. Series

Vishay Semiconductors

VISHAY

Typical Characteristics (T

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW)

0

0 40 80 120

T

96 11700

– Ambient Temperature( °C )

amb

= 25 °C unless otherwise specified)

amb

Fig. 6 Total Power Dissipation vs. Ambient Temperature

1000.0

100.0

10000

VCE=20V

=0

I

1000

F

100

with open Base ( nA )

10

CEO

I - Collector Dark Current,

1

0255075

T

95 11026

- Ambient Temperature ( ° C)

amb

100

Fig. 9 Collector Dark Current vs. Ambient Temperature

100

VCE=5V

10

10.0

1.0

F

I - Forward Current ( mA )

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

Fig. 7 Forward Current vs. Forward Voltage

2.0

V

CE

=5mA

I

F

1.5

1.0

0.5

rel

0

CTR – Relative Current Transfer Ratio

–25 0 25 50

T

95 11025

– Ambient Temperature ( °C )

amb

=5V

75

1

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11027

IF– Forward Current ( mA )

Fig. 10 Collector Current vs. Forward Current

100

20mA

IF=50mA

10

10mA

5mA

1

C

I – Collector Current ( mA)

2mA

1mA

0.1

0.1 1 10

V

95 10985

– Collector Emitter Voltage(V)

CE

100

100

Fig. 8 Relative Current Transfer Ratio vs. Ambient Temperature

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Fig. 11 Collector Current vs. Collector Emitter Voltage

Document Number 83515

Rev. 1.7, 20-Apr-04

VISHAY

TCLT10.. Series

Vishay Semiconductors

1.0

20%

0.8

CTR=50%

0.6

0.4

CEsat

V – Collector Emitter Saturation Voltage (V)

95 11028

0.2

0

110

IC– Collector Current ( mA )

10%

100

Fig. 12 Collector Emitter Saturation Voltage vs. Collector Current

1000

VCE=5V

100

10

50

µ

Saturated Operation
V

S

40

R

L

=5V
=1k Ω

30

t

off

20

10

off

on

t /t –Turnon / Turnoff Time ( s )

0

t

on

0 5 10 15

I

95 11031

– Forward Current ( mA )

F

Fig. 15 Turn on / off Time vs. Forward Current

20

CTR – Current Transfer Ratio ( % )

1

0.1 1 10

95 11029

IF– Forward Current ( mA )

100

Fig. 13 Current Transfer Ratio vs. Forward Current

10

µ

8

t

on

Non Saturated
Operation
V

=5V

S

=100 Ω

R

L

6

t

off

4

2

off

on

t /t –Turnon / Turnoff Time ( s )

95 11030

0

02 4 6

I

– Collector Current ( mA )

C

10

Fig. 14 Turn on / off Time vs. Collector Current

Document Number 83515

Rev. 1.7, 20-Apr-04

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TCLT10.. Series

Vishay Semiconductors

Package Dimensions in mm

VISHAY

15243

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Document Number 83515

Rev. 1.7, 20-Apr-04

VISHAY

TCLT10.. Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83515

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