VISHAY
17294
C
CE
AC
1
2
3
4
V
D E
TCLD1000
Vishay Semiconductors
Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat
Package
Features
• Low profile package
• Darlington output
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI ≥ 175
• Thickness through insulation ≥ 0.75 mm
• Creepage distance > 8 mm
• Tested acc. 60950: AM4: 1997 clause 2.9.6.
Agency Approvals
• UL - File No. E76222 System Code W
• UL 1577
• CSA 22.2 bulletin 5A, Double Protection
• BSI IEC60950 IEC60965
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Applications
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage ≤ 300 V
• For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2.
Description
The TCLD1000 consists of a darlington phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-lead SO6L package.
The elements are mounted on one leadframe, provide
a fixed distance between input and output for highest
safety requirements.
Order Information
Part Remarks
TCLD1000 CTR > 600 %, SMD-4
Document Number 83516
Rev. 1.6, 20-Apr-04
www.vishay.com
1
TCLD1000
VISHAY
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
Power dissipation P
Junction temperature T
≤ 10 µsI
p
R
F
FSM
diss
j
6V
60 mA
1.5 A
100 mW
125 °C
Output
Parameter Test condition Symbol Val ue Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
/T = 0.5, tp ≤ 10 ms I
p
CEO
ECO
C
CM
diss
j
35 V
7V
80 mA
100 mA
150 mW
125 °C
Coupler
Parameter Test condition Symbol Val ue Unit
Isolation test voltage (RMS) V
Total power dissipation P
Operating ambient temperature
range
Storage temperature range T
Soldering temperature T
T
ISO
tot
amb
stg
sld
5000 V
250 mW
- 40 to + 100 °C
- 40 to + 100 °C
240 °C
RMS
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Junction capacitance V
= ± 50 mA V
F
= 0 V, f = 1 MHz C
R
F
j
1.25 1.6 V
50 pF
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Collector emitter voltage I
Emitter collector voltage I
Collector-emitter cut-off current V
= 1 mA V
C
= 100 µAV
E
= 20 V, If = 0, E = 0 I
CE
CEO
ECO
CEO
35 V
7V
100 nA
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2
Document Number 83516
Rev. 1.6, 20-Apr-04
VISHAY
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Collector emitter saturation
voltage
Cut-off frequency V
Coupling capacitance f = 1 MHz C
Current Transfer Ratio
Parameter Test condition Symbol Min Ty p. Max Unit
I
C/IF
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
= 10 mA, IC = 1 mA V
I
F
= 5 V, IF = 10 mA,
CE
R
= 100 Ω
L
VCE = 2 V, IF = 1 mA CTR 600 800 %
CEsat
f
c
k
TCLD1000
Vishay Semiconductors
0.3 V
10 kHz
0.3 pF
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Forward current I
Output
Parameter Test condition Symbol Min Ty p. Max Unit
Power dissipation T
≤ 25 °C P
amb
Coupler
Parameter Test condition Symbol Min Ty p. Max Unit
Rated impulse voltage V
Safety temperature T
Insulation Rated Parameters
Parameter Test condition Symbol Min Ty p. Max Unit
Partial discharge test voltage Routine test
Partial discharge test voltage Lot test (sample test)
Insulation resistance V
100 %, t
t
= 60 s, t
Tr
(see figure 2)
IO
V
IO
V
IO
(constru ction test on ly)
= 1 s V
test
= 10 s,
test
= 500 V R
= 500 V, T
= 500 V, T
= 100 °C R
amb
= 150 °C
amb
V
F
diss
IOTM
si
pd
IOTM
V
pd
IO
IO
R
IO
130 mA
265 mW
8kV
150 °C
1.6 kV
8kV
1.3 kV
10
10
10
12
11
9
Ω
Ω
Ω
Document Number 83516
Rev. 1.6, 20-Apr-04
www.vishay.com
3