VISHAY TCLD1000 Technical data

VISHAY

17294

C

CE

AC

1

2

3

4

V

D E

TCLD1000

Vishay Semiconductors

Optocoupler, Photodarlington Output, SOP-4L, Long Mini-Flat
Package

Features

• Low profile package

• Darlington output

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• Creepage current resistance according to VDE
0303/IEC 60112 Comparative Tracking Index:
CTI ≥ 175

• Thickness through insulation ≥ 0.75 mm

• Creepage distance > 8 mm

• Tested acc. 60950: AM4: 1997 clause 2.9.6.

Agency Approvals

• UL - File No. E76222 System Code W

• UL 1577

• CSA 22.2 bulletin 5A, Double Protection

• BSI IEC60950 IEC60965

• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending

Applications

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Reinforced Isolation provides circuit protection

against electrical shock (Safety Class II)
Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord­ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2.

Description

The TCLD1000 consists of a darlington phototransis­tor optically coupled to a gallium arsenide infrared­emitting diode in a 4-lead SO6L package.

The elements are mounted on one leadframe, provide
a fixed distance between input and output for highest
safety requirements.

Order Information

Part Remarks

TCLD1000 CTR > 600 %, SMD-4

Document Number 83516

Rev. 1.6, 20-Apr-04

www.vishay.com

1

TCLD1000

VISHAY

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

≤ 10 µsI

p

R

F

FSM

diss

j

6V

60 mA

1.5 A

100 mW

125 °C

Output

Parameter Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

CEO

ECO

C

CM

diss

j

35 V

7V

80 mA

100 mA

150 mW

125 °C

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (RMS) V

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature T

T

ISO

tot

amb

stg

sld

5000 V

250 mW

- 40 to + 100 °C

- 40 to + 100 °C

240 °C

RMS

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= ± 50 mA V

F

= 0 V, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter cut-off current V

= 1 mA V

C

= 100 µAV

E

= 20 V, If = 0, E = 0 I

CE

CEO

ECO

CEO

35 V

7V

100 nA

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2

Document Number 83516

Rev. 1.6, 20-Apr-04

VISHAY

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

Current Transfer Ratio

Parameter Test condition Symbol Min Ty p. Max Unit

I

C/IF

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

R

= 100 Ω

L

VCE = 2 V, IF = 1 mA CTR 600 800 %

CEsat

f

c

k

TCLD1000

Vishay Semiconductors

0.3 V

10 kHz

0.3 pF

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward current I

Output

Parameter Test condition Symbol Min Ty p. Max Unit

Power dissipation T

≤ 25 °C P

amb

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Rated impulse voltage V

Safety temperature T

Insulation Rated Parameters

Parameter Test condition Symbol Min Ty p. Max Unit

Partial discharge test voltage ­Routine test

Partial discharge test voltage ­Lot test (sample test)

Insulation resistance V

100 %, t

t

= 60 s, t

Tr

(see figure 2)

IO

V

IO

V

IO

(constru ction test on ly)

= 1 s V

test

= 10 s,

test

= 500 V R

= 500 V, T

= 500 V, T

= 100 °C R

amb

= 150 °C

amb

V

F

diss

IOTM

si

pd

IOTM

V

pd

IO

IO

R

IO

130 mA

265 mW

8kV

150 °C

1.6 kV

8kV

1.3 kV

10

10

10

12

11

9

Ω

Ω

Ω

Document Number 83516

Rev. 1.6, 20-Apr-04

www.vishay.com

3

TCLD1000

Vishay Semiconductors

300

250

200

150

100

Phototransistor
Psi ( mW )

V

V

V

IOTM

V

IOWM

IORM

VISHAY

t1, t2 = 1 to 10 s

, t4 = 1 s

t

3

t

= 10 s

test

t

= 12 s

stres

Pd

50

tot

P – Total Power Dissipation ( mW )

0

0 25 50 75 125

94 9182

Fig. 1 Derating diagram

IR-Diode
Isi ( mA )

100

Tsi – Safety Temperature ( °C )

150

13930

0

t

1

tTr = 60 s

t

2

t

t3t

t

stres

Fig. 2 Test pulse diagram for sample test according to DIN EN

60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747

Switching Characteristics

Parameter Test condition Symbol Min Ty p . Max Unit

Rise time V

= 2 V, IC = 10 mA, RL = 100 Ω (see

CE

figure 1)

Turn-off time V

= 2 V, IC = 10 mA, RL = 100 Ω (see

CE

figure 1)

+V

0

R

G

t

p

T

= 50 Ω

= 0.01

I

I

F

F

CC

IC = 10 mA;

tp = 50 ms

Channel I

Channel II

14779

50 Ω

R

L

Fig. 3 Test circuit, non-saturated operation

Oscilloscope

= 1 MΩ

R

I

C

= 20 pF

I

t

r

t

off

I

F

0

I

C

100%

90%

10%

0

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

t

r

t

d

t

on

pulse duration
delay time
rise time

Fig. 4 Switching Times

300 µs

250 µs

t

p

t

t

f

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

96 11698

storage time
fall time

test

4

t

t

t

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Document Number 83516

Rev. 1.6, 20-Apr-04

VISHAY

TCLD1000

Vishay Semiconductors

Typical Characteristics (T

1.3

IF=10mA

1.2

1.1

1.0

F

0.9

V – Forward Voltage ( V )

0.8
0 20406080100

T

14389

– Ambient Temperature (°C )

amb

= 25 °C unless otherwise specified)

amb

Fig. 5 Forward Voltage vs. Ambient Temperature

1000.0

100.0

100000

VCE=10V
I

=0

10000

1000

with open Base ( nA)

CEO

I – Collector Dark Current,

14392

F

100

10

1

20 30 40 50 60 70 80 90 100

T

– Ambient Temperature (°C )

amb

Fig. 8 Collector Dark Current vs. Ambient Temperature

1000.0

VCE=2V

100.0

10.0

1.0

F

I – Forward Current ( mA )

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

14390

VF– Forward Voltage(V)

Fig. 6 Forward Current vs. Forward Voltage

1.5
VCE=5V

1.4
I

=1mA

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

rel

0.5

CTR – Relative Current Transfer Ratio

–30–20–100 102030405060708090100

T

14391

– Ambient Temperature (°C )

amb

10.0

1.0

C

I – Collector Current ( mA)

0.1

0.1 1.0 10.0 100.0

14393

IF– Forward Current ( mA )

Fig. 9 Collector Current vs. Forward Current

100.0

10.0

1.0

C

I – Collector Current ( mA)

0.1

0.1 1.0 10.0 100.0

14394

VCE– Collector Emitter Voltage(V)

IF=2mA

1mA

0.5mA

0.2mA

0.1mA

Fig. 7 Relative Current Transfer Ratio vs. Ambient Temperature

Document Number 83516

Rev. 1.6, 20-Apr-04

Fig. 10 Collector Current vs. Collector Emitter Voltage

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TCLD1000

Vishay Semiconductors

Package Dimensions in mm

VISHAY

15243

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6

Document Number 83516

Rev. 1.6, 20-Apr-04

VISHAY

TCLD1000

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83516

Rev. 1.6, 20-Apr-04

www.vishay.com

7