TCDT1120/ TCDT1120G
Optocoupler, Phototransistor Output
Features
• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• Four CTR groups available
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code A, Double
Protection
A (+) C (–) nc
nc
C
65
1
2
Vishay Semiconductors
E
4
3
17201_1
DE
V
e3
Pb
Pb-free
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
• FIMKO
Applications
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Reinforced Isolation provides circuit protection
against electrical shock (Safety Class II)
Circuits for safe protective separation against electri-
cal shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage ≤ 300 V
• For appl. class I - III at mains voltage ≤ 600 V accord-
ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2.
Description
The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety requirements.
VDE Standards
These couplers perform safety functions according to the following
equipment standards:
DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Office machines (applied for reinforced isolation for mains voltage
≤
400 VRMS)
VDE 0804
Telecommunication apparatus and data processing
IEC 60065
Safety for mains-operated electronic and related household appa-
ratus
Order Information
Part Remarks
TCDT1120 CTR > 40 %, DIP-6
TCDT1122 CTR 63 - 125 %, DIP-6
TCDT1123 CTR 100 - 200 %, DIP-6
TCDT1124 CTR 160 - 320 %, DIP-6
TCDT1120G CTR > 40 %, DIP-6
TCDT1122G CTR 63 - 125 %, DIP-6
TCDT1123G CTR 100 - 200 %, DIP-6
TCDT1124G CTR 160 - 320 %, DIP-6
G = Leadform 10.16 mm; G is not marked on the body
Document Number 83532
Rev. 1.6, 26-Oct-04
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1
TCDT1120/ TCDT1120G
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parame te r Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
≤ 10 µsI
p
Power dissipation P
Junction temperature T
Output
Parame te r Test condition Symbol Val ue Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
/T = 0.5, tp ≤ 10 ms I
p
R
F
FSM
diss
j
CBO
CEO
ECO
C
CM
diss
j
5V
60 mA
3A
100 mW
125 °C
90 V
90 V
7V
50 mA
100 mA
150 mW
125 °C
Coupler
Parame te r Test condition Symbol Val ue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation P
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
ISO
tot
amb
stg
sld
3750 V
RMS
250 mW
- 55 to + 100 °C
- 55 to + 125 °C
260 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parame te r Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Junction capacitance V
= 50 mA V
F
= 0, f = 1 MHz C
R
F
j
1.25 1.6 V
50 pF
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2
Document Number 83532
Rev. 1.6, 26-Oct-04
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Collector base voltage I
Collector emitter voltage I
Emitter collector voltage I
Collector-emitter cut-off current V
= 100 µAV
C
= 1 mA V
C
= 100 µAV
E
= 20 V, If = 0 I
CE
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter saturation
voltage
Cut-off frequency V
Coupling capacitance f = 1 MHz C
= 10 mA, IC = 1 mA V
I
F
= 5 V, IF = 10 mA,
CE
= 100 Ω
R
L
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
VCE = 5 V, IF = 1 mA TCDT1120
TCDT1120G
TCDT1122G
TCDT1123G
TCDT1124G
= 5 V, IF = 10 mA TCDT1120
V
CE
TCDT1120G
TCDT1122G
TCDT1123G
TCDT1124G
TCDT1120/ TCDT1120G
Vishay Semiconductors
CBO
CEO
ECO
CEO
CEsat
f
c
k
TCDT1122
TCDT1123
TCDT1124
TCDT1122
TCDT1123
TCDT1124
90 V
90 V
7V
150 nA
0.3 V
110 kHz
0.3 pF
CTR 10 %
CTR 15 %
CTR 30 %
CTR 60 %
CTR 40 %
CTR 63 125 %
CTR 100 200 %
CTR 160 320 %
Maximum Safety Ratings
(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Input
Parameter Test condition Symbol Min Ty p . Max Unit
Forward current I
F
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Power dissipation P
Document Number 83532
Rev. 1.6, 26-Oct-04
diss
130 mA
265 mW
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3
TCDT1120/ TCDT1120G
Vishay Semiconductors
Coupler
Parame te r Test condition Symbol Min Ty p. Max Unit
Rated impulse voltage V
Safety temperature T
Insulation Rated Parameters
Parame te r Test condition Symbol Min Ty p. Max Unit
Partial discharge test voltage Routine test
Partial discharge test voltage Lot test (sample test)
Insulation resistance V
300
P
250
200
150
si (mW)
100 %, t
= 60 s, t
t
Tr
(see figure 2)
IO
V
IO
V
IO
(construction test only)
= 1 s V
test
= 10 s,
test
= 500 V R
= 500 V, T
= 500 V, T
≤ 100 °C R
amb
≤ 150 °C
amb
V
IOTM
pd
IOTM
V
pd
IO
IO
R
IO
V
V
IOWM
V
si
IOTM
V
IORM
6kV
150 °C
1.6 kV
6kV
1.3 kV
12
10
11
10
9
10
t1, t2 = 1 to 10 s
t
, t4 = 1 s
3
= 10 s
t
test
t
= 12 s
stres
Pd
Ω
Ω
Ω
100
I
si (mA)
50
0
0 25 50 75 100 125 150 175 200
T
95 10934
amb
(°C)
Figure 1. Derating diagram
0
13930
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
Switching Characteristics
Para me te r Current Delay Rise time Storage Fall time Turn-on
Test condition VS = 5 V, RL = 100 Ω
(see figure 3)
Symbol I
F
Unit mA µs µs µs µs µs µs µs µs
TCDT1120
10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5
TCDT1120G
10 2.5 3.0 0.3 3.7 5.5 4.0 16.5 22.5
TCDT1123
10 2.8 4.2 0.3 4.7 7.0 5.0 21.5 37.5
TCDT1123G
TCDT1124
10 2.0 4.0 0.3 4.7 6.0 5.0 20.0 50.0
TCDT1124G
t
D
t
r
t
S
t
f
t
t3t
test
4
t
1
time
tTr = 60 s
Turn-off
time
t
t
stres
2
Tu r n -o n
time
t
Turn-off
time
VS = 5 V, RL = 1 kΩ
(see figure 4)
t
on
t
off
t
on
t
off
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Document Number 83532
Rev. 1.6, 26-Oct-04
TCDT1120/ TCDT1120G
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
I
F
0
I
C
100%
90%
10%
0
t
d
t
t
p
t
d
t
r
(= td+tr) turn-on time
t
on
on
pulse duration
delay time
rise time
300
Coupled device
250
200
Phototransistor
150
IR-diode
100
50
tot
P –Total Power Dissipation ( mW )
0
0 40 80 120
96 11700
T
t
p
t
r
t
s
t
off
t
s
t
f
t
(= ts+tf) turn-off time
off
Figure 3. Switching Times
– Ambient Temperature( °C )
amb
96 11698
t
1.5
1.4
1.3
VCE=5V
=10mA
I
F
1.2
1.1
1.0
0.9
0.8
t
f
t
storage time
fall time
0.7
rel
0.6
CTR – Relative Current Transfer Ratio
0.5
–30–20–100 1020304050607080
T
96 11918
– Ambient Temperature (°C )
amb
Figure 6. Relative Current Transfer Ratio vs. Ambient
Temperature
10000
VCE=30V
=0
I
1000
with open Base ( nA)
CEO
I – Collector Dark Current,
95 11038
100
F
10
1
0255075
T
– Ambient Temperature( °C )
amb
100
Figure 4. Total Power Dissipation vs. Ambient Temperature
1000
100
10
1
F
I - Forward Current ( mA )
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
96 11862
VF- Forward Voltage(V)
Figure 5. Forward Current vs. Forward Voltage
Document Number 83532
Rev. 1.6, 26-Oct-04
Figure 7. Collector Dark Current vs. Ambient Temperature
100
VCE=5V
10
1
0.1
C
I – Collector Current ( mA )
0.01
0.1 1 10
95 11040
IF– Forward Current ( mA )
100
Figure 8. Collector Current vs. Forward Current
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5
TCDT1120/ TCDT1120G
Vishay Semiconductors
100
IF=50mA
20mA
10
10mA
5mA
1
C
I – Collector Current ( mA )
0.1
0.1 1 10
95 11041
V
CE
CNY75A
– Collector Emitter Voltage(V)
2mA
1mA
100
Figure 9. Collector Current vs. Collector Emitter Voltage
1.0
CTR=50%
0.8
0.6
0.4
0.2
0
CEsat
110
V – Collector Emitter Saturation V oltage (V)
95 11034
IC– Collector Current ( mA )
CNY75A
20%
10%
100
1000
TCDT1123(G)
=5V
V
CE
100
10
CTR – CurrentTransfer Ratio ( % )
1
0.1 1 10
14797
IF– Forward Current ( mA )
100
Figure 12. Current Transfer Ratio vs. Forward Current
1000
TCDT1124(G)
=5V
V
CE
100
10
CTR – Current Transfer Ratio ( % )
1
0.1 1 10
14798
IF– Forward Current ( mA )
100
Figure 10. Collector Emitter Saturation Voltage vs. Collector
Current
1000
TCDT1122(G)
V
=5V
CE
100
10
CTR – Current Transfer Ratio ( % )
1
0.1 1 10
14796
IF– Forward Current ( mA )
100
Figure 11. Current Transfer Ratio vs. Forward Current
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Figure 13. Current Transfer Ratio vs. Forward Current
50
14799
µ
off
on
t / t –Turn on / Turn off Time ( s )
TCDT1122(G)
Saturated Operation
40
V
=5V
S
R
=1k Ω
L
30
20
10
0
0 5 10 15
I
– Forward Current ( mA )
F
t
off
t
on
20
Figure 14. Turn on / off Time vs. Forward Current
Document Number 83532
Rev. 1.6, 26-Oct-04
TCDT1120/ TCDT1120G
Vishay Semiconductors
50
µ
40
TCDT1123(G)
Saturated Operation
=5V
V
S
R
=1k Ω
L
30
t
off
20
10
off
on
t / t –Turn on / Turn off Time ( s )
0
t
on
0 5 10 15
– Forward Current ( mA )
14800
I
F
Figure 15. Turn on / off Time vs. Forward Current
50
14801
µ
off
on
t / t –Turn on / Turn off Time ( s )
TCDT1124(G)
Saturated Operation
40
V
=5V
S
R
=1k Ω
L
30
20
10
0
0 5 10 15
– Forward Current ( mA )
I
F
t
off
t
on
20
µ
15
TCDT1123(G)
Non Saturated
Operation
=5V
V
S
R
=100 Ω
L
10
t
5
off
on
t / t –Turn on / Turn off Time ( s )
20
0
02 4 6
14803
I
C
– Collector Current ( mA )
on
t
off
10
8
Figure 18. Turn on / off Time vs. Collector Current
20
µ
15
t
on
10
t
off
5
off
on
t / t –Turn on / Turn off Time ( s )
20
0
02 4 6
14804
I
C
– Collector Current ( mA )
TCDT1124(G)
Non Saturated
Operation
V
=5V
S
=100 Ω
R
L
8
10
Figure 16. Turn on / off Time vs. Forward Current
20
µ
15
t
on
TCDT1122(G)
Non Saturated
Operation
V
=5V
S
R
=100 Ω
L
10
t
off
5
off
on
t / t –Turn on / Turn off Time ( s )
0
02 4 6
– Collector Current ( mA )
14802
I
C
Figure 17. Turn on / off Time vs. Collector Current
Document Number 83532
Rev. 1.6, 26-Oct-04
Figure 19. Turn on / off Time vs. Collector Current
10
8
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TCDT1120/ TCDT1120G
Vishay Semiconductors
Package Dimensions in mm
Package Dimensions in mm
14770
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8
14771
Document Number 83532
Rev. 1.6, 26-Oct-04
TCDT1120/ TCDT1120G
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83532
Rev. 1.6, 26-Oct-04
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9
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
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