VISHAY TCDT1120, TCDT1120G Technical data

TCDT1120/ TCDT1120G

Optocoupler, Phototransistor Output

Features

• Extra low coupling capacity - typical 0.2 pF

• High Common Mode Rejection

• Four CTR groups available

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code A, Double
Protection

A (+) C (–) nc

nc

C

65

1

2

Vishay Semiconductors

E

4

3

17201_1

DE

V

e3

Pb

Pb-free

• BSI IEC60950 IEC60065

• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending

• FIMKO

Applications

Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
Reinforced Isolation provides circuit protection

against electrical shock (Safety Class II)
Circuits for safe protective separation against electri-

cal shock according to safety class II (reinforced iso­lation):

• For appl. class I - IV at mains voltage ≤ 300 V

• For appl. class I - III at mains voltage ≤ 600 V accord-

ing to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747­5-5 pending, table 2.

Description

The TCDT1120(G) series consists of a phototransis­tor optically coupled to a gallium arsenide infrared­emitting diode in a 6-lead plastic dual inline package.

The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety require­ments.

VDE Standards

These couplers perform safety functions according to the following

equipment standards:

DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5
pending

Optocoupler for electrical safety requirements

IEC 60950/EN 60950

Office machines (applied for reinforced isolation for mains voltage

≤

400 VRMS)

VDE 0804

Telecommunication apparatus and data processing

IEC 60065

Safety for mains-operated electronic and related household appa-

ratus

Order Information

Part Remarks

TCDT1120 CTR > 40 %, DIP-6

TCDT1122 CTR 63 - 125 %, DIP-6

TCDT1123 CTR 100 - 200 %, DIP-6

TCDT1124 CTR 160 - 320 %, DIP-6

TCDT1120G CTR > 40 %, DIP-6

TCDT1122G CTR 63 - 125 %, DIP-6

TCDT1123G CTR 100 - 200 %, DIP-6

TCDT1124G CTR 160 - 320 %, DIP-6

G = Leadform 10.16 mm; G is not marked on the body

Document Number 83532

Rev. 1.6, 26-Oct-04

www.vishay.com

1

TCDT1120/ TCDT1120G

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parame te r Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

≤ 10 µsI

p

Power dissipation P

Junction temperature T

Output

Parame te r Test condition Symbol Val ue Unit

Collector base voltage V

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

R

F

FSM

diss

j

CBO

CEO

ECO

C

CM

diss

j

5V

60 mA

3A

100 mW

125 °C

90 V

90 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Parame te r Test condition Symbol Val ue Unit

Isolation test voltage (RMS) t = 1 min V

Total power dissipation P

Ambient temperature range T

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

ISO

tot

amb

stg

sld

3750 V

RMS

250 mW

- 55 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parame te r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

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2

Document Number 83532

Rev. 1.6, 26-Oct-04

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Collector base voltage I

Collector emitter voltage I

Emitter collector voltage I

Collector-emitter cut-off current V

= 100 µAV

C

= 1 mA V

C

= 100 µAV

E

= 20 V, If = 0 I

CE

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter saturation
voltage

Cut-off frequency V

Coupling capacitance f = 1 MHz C

= 10 mA, IC = 1 mA V

I

F

= 5 V, IF = 10 mA,

CE

= 100 Ω

R

L

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

VCE = 5 V, IF = 1 mA TCDT1120

TCDT1120G

TCDT1122G

TCDT1123G

TCDT1124G

= 5 V, IF = 10 mA TCDT1120

V

CE

TCDT1120G

TCDT1122G

TCDT1123G

TCDT1124G

TCDT1120/ TCDT1120G

Vishay Semiconductors

CBO

CEO

ECO

CEO

CEsat

f

c

k

TCDT1122

TCDT1123

TCDT1124

TCDT1122

TCDT1123

TCDT1124

90 V

90 V

7V

150 nA

0.3 V

110 kHz

0.3 pF

CTR 10 %

CTR 15 %

CTR 30 %

CTR 60 %

CTR 40 %

CTR 63 125 %

CTR 100 200 %

CTR 160 320 %

Maximum Safety Ratings

(according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1
This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

Input

Parameter Test condition Symbol Min Ty p . Max Unit

Forward current I

F

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Power dissipation P

Document Number 83532

Rev. 1.6, 26-Oct-04

diss

130 mA

265 mW

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3