VISHAY TCDT1110G Technical data

TCDT1110(G)

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCDT1110(G) consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according to the following equipment standards:

D

VDE 0884 Optocoupler for electrical safety requirements

D

IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V

D

VDE 0804 Telecommunication apparatus and data processing

D

IEC 65 Safety for mains-operated electronic and related household apparatus

RMS

)

14827

nc

C

65

1

2

A (+) C (–) nc

E

4

94 9222

3

Order Instruction

Ordering Code CTR Ranking Remarks

TCDT1110/ TCDT1110G

1)

G = Leadform 10.16 mm; G is not market on the body

1)

> 100%

Rev. A3, 11–Jan–99216

Features

TCDT1110(G)

Vishay Telefunken

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950, Certificate number 12399

D

Underwriters Laboratory (UL) 1577 recognized,

D

Rated recurring peak voltage (repetitive)

= 600 V

V

IORM

D

Creepage current resistance according to VDE 0303/IEC 1 12 Comparative Tracking Index: CTI = 275

D

Thickness through insulation ≥ 0.75 mm

General features:

file number E-76222

D

VDE 0884, Certificate number 94778

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)

= 6 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test voltage) V

D

Rated isolation voltage (RMS includes DC) V

IOWM

= 1.6 kV

pd

= 600 V

(848 V peak)

RMS

Isolation materials according to UL94-VO

D

Pollution degree 2 (DIN/VDE 01 10 resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

Base not connected

D

Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Forward surge current tp/T ≤ 10 ms I Power dissipation T Junction temperature T

≤ 25°C P

amb

RMS

F

FSM

R

6 V

60 mA

3 A

V

j

100 mW 125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit Collector emitter voltage V Emitter collector voltage V Collector current I Collector peak current tp/T = 0.5, tp ≤ 10 ms I Power dissipation T

≤ 25°C P

amb

Junction temperature T

CEO ECO

C

CM

V

j

70 V

7 V

50 mA 100 mA 150 mW 125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit Isolation test voltage (RMS) t = 1 min V Total power dissipation T

≤ 25°C P

amb

Ambient temperature range T Storage temperature range T Soldering temperature 2 mm from case, t ≤ 10 s T

IO tot

amb

stg

sd

Rev. A3, 11–Jan–99 217

3.75 kV 250 mw

–55 to +100 –55 to +125

260

°

C

°

C

°

C

TCDT1110(G)

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA V Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA V Emitter collector voltage IE = 100 mA V Collector cut-off current VCE = 30 V, IF = 0 I

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter

saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 0.5 mA V

= 1

R

W

L

F

j

CEO ECO

CEO

CEsat

f

c

k

1.2 1.5 V 50 pF

70 V

7 V

150 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 20 V, IF = 10 mA TCDT1110(G) CTR 1

Rev. A3, 11–Jan–99218

TCDT1110(G)

gg

Tr test

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

≤ 25°C P

amb

Coupler

Parameters Test Conditions Symbol Value Unit Rated impulse voltage V Safety temperature T

si

IOTM

si

130 mA

265 mW

6 kV

150

°

C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage – Routine test

Partial discharge test voltage – tTr = 60 s, t Lot test (sample test)

Insulation resistance VIO = 500 V R

300

P

250

200

150

100

I

50

si (mA)

0

0 25 50 75 100 125 150 175 200

(mW)

si

T

amb

100%, t

(see figure 2)

VIO = 500 V,

= 100°C

T

amb

VIO = 500 V,

= 200°C

T

amb

(construction test only)

( °C )95 10934

= 1 s V

test

= 10 s, V

test

V

13930

IOTM

V

R

IOTM

V

Pd

IOWM

IORM

pd

pd IO IO

IO

1.6 kV

6 kV

1.3 kV 10 10

10

0

t

1

12 11

9

t1, t2= 1 to 10 s

t3, t4= 1 s t t

test stres

= 10 s = 12 s

tTr= 60 s

W W

W

t

test

4

3

t

stres

2

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Rev. A3, 11–Jan–99 219

TCDT1110(G)

S C L

(g)

S F L

(g)

Vishay Telefunken

Switching Characteristics

Parameter Test Conditions Symbol Typ. Unit Turn-off time VS = 10 V, IC = 2 mA, RL = 100 W (see figure 3) t Turn-on time Turn-off time VS = 10 V, IF = 10 mA, RL = 1 kW (see figure 4) t Turn-on time

off

t

on off

t

on

15.0

18.0

9.0

m

s

m

s

m

s

m

s

0

RG= 50

tp

= 0.01

T

tp= 50 ms

95 10889

I

F

W

50

W

100

+ 10 V IC= 2 mA ;

Channel I

Channel II

W

Figure 3. Test circuit, non-saturated operation

+ 10 V I

C

Channel I

0

RG= 50 tp

T

tp= 50 ms

I

= 0.01

= 10 mA

I

F

W

Adjusted through input amplitude

Oscilloscope

RLw

1 M

20 pF

W

CLv

I

F

0

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

tion t

d

t

r

t

(= td + tr) turn-on time

on

pulse duradelay time

rise time

Figure 5. Switching times

96 11698

t

p

t

s

f

t

off

t

s

t

f

t

(= ts + tf) turn-off time

off

t

storage time fall time

50

95 10898

Figure 4. Test circuit, saturated operation

Channel II

W

1 k

W

Oscilloscope

RLw

1 M

CLv

20 pF

W

Rev. A3, 11–Jan–99220

TCDT1110(G)

Vishay Telefunken

Typical Characteristics (T

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

Figure 6. Total Power Dissipation vs.

1000.0

100.0

– Ambient Temperature (

amb

°

Ambient Temperature

= 25_C, unless otherwise specified)

amb

10000

VCE=30V I

=0

1000

100

with open Base ( nA )

CEO

I – Collector Dark Current,

95 11072

F

10

1

0255075

T

– Ambient Temperature ( °C )

amb

Figure 9. Collector Dark Current vs.

Ambient Temperature

100.00

VCE=10V

10.00

100

10.0

1.0

F

I – Forward Current ( mA )

0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 7. Forward Current vs. Forward Voltage

1.5

VCE=10V

1.4

I

=10mA

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

rel

0.6

CTR – Relative Current Transfer Ratio

0.5

–30 –20 –10 0 10 20 30 40 50 60 70 80

T

96 11874

– Ambient Temperature ( °C

amb

1.00

0.10

C

I – Collector Current ( mA )

0.01

0.1 1.0 10.0 100.0

IF – Forward Current ( mA )96 11904

Figure 10. Collector Current vs. Forward Current

100

20mA

IF=50mA

10mA

5mA

2mA

1mA

100

C

I – Collector Current ( mA )

95 10985

10

1

0.1

0.1 1 10 V

– Collector Emitter Voltage ( V )

CE

Figure 8. Relative Current Transfer Ratio vs.

Figure 11. Collector Current vs. Collector Emitter Voltage

Ambient Temperature

Rev. A3, 11–Jan–99 221

TCDT1110(G)

)

Vishay Telefunken

1.0

0.8

20%

0.6

CTR=50%

0.4

0.2

10%

0

CEsat

V – Collector Emitter Saturation Voltage ( V

95 10972

110

IC – Collector Current ( mA )

100

Figure 12. Collector Emitter Saturation Voltage vs.

Collector Current

1000

VCE=20V

100

10

CTR – Current Transfer Ratio ( % )

1

100

95 10976

0.1 1 10 IF – Forward Current ( mA )

Figure 13. Current Transfer Ratio vs. Forward Current

50

m

Saturated Operation

V

=5V

S

40

R

=1k

L

W

30

t

off

20

10

off

on

t / t – Turn on / Turn off Time ( s )

95 10974

0

0 5 10 15

– Forward Current ( mA )

I

F

t

on

20

Figure 15. Turn on / off Time vs. Forward Current

m

off

on

t / t – Turn on / Turn off Time ( s )

95 10975

20

15

t

off

10

t

on

5

0

02 46

– Collector Current ( mA )

I

C

Non Saturated

Operation V

=10V

S

R

=100

W

L

8

10

Figure 16. Turn on / off Time vs. Collector Current

Type

XXXXXX

Date

Code

(YM)

918 A TK 63

V

DE

0884

Coupling

System

Indicator

Company

Logo

Figure 14. Marking example

Production

Location

Safety

Logo

15090

Rev. A3, 11–Jan–99222

Dimensions of TCDT1110G in mm

weight: ca. 0.50 g creepage distance:y 8 mm air path:

y

TCDT1110(G)

Vishay Telefunken

8 mm

Dimensions of TCDT1110 in mm

after mounting on PC board

14771

weight: 0.50 g creepage distance:y 6 mm air path:

after mounting on PC board

y

6 mm

14770

Rev. A3, 11–Jan–99 223

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