VISHAY TCDT1110G Technical data

TCDT1110(G)

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCDT1110(G) consists of a phototransistor
optically coupled to a gallium arsenide infrared­emitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications

Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according
to the following equipment standards:

D

VDE 0884
Optocoupler for electrical safety requirements

D

IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V

D

VDE 0804
Telecommunication apparatus and data
processing

D

IEC 65
Safety for mains-operated electronic and related
household apparatus

RMS

)

14827

nc

C

65

1

2

A (+) C (–) nc

E

4

94 9222

3

Order Instruction

Ordering Code CTR Ranking Remarks

TCDT1110/ TCDT1110G

1)

G = Leadform 10.16 mm; G is not market on the body

1)

> 100%

Rev. A3, 11–Jan–99216

Features

TCDT1110(G)

Vishay Telefunken

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950,
Certificate number 12399

D

Underwriters Laboratory (UL) 1577 recognized,

D

Rated recurring peak voltage (repetitive)

= 600 V

V

IORM

D

Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275

D

Thickness through insulation ≥ 0.75 mm

General features:

file number E-76222

D

D

VDE 0884, Certificate number 94778

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)

= 6 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test
voltage) V

D

Rated isolation voltage (RMS includes DC)
V

IOWM

= 1.6 kV

pd

= 600 V

(848 V peak)

RMS

Isolation materials according to UL94-VO

D

Pollution degree 2 (DIN/VDE 01 10 resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

Base not connected

D

Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp/T ≤ 10 ms I
Power dissipation T
Junction temperature T

≤ 25°C P

amb

RMS

F

FSM

R

6 V

60 mA

3 A

V

j

100 mW
125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T

≤ 25°C P

amb

Junction temperature T

CEO
ECO

C

CM

V

j

70 V

7 V

50 mA
100 mA
150 mW
125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min V
Total power dissipation T

≤ 25°C P

amb

Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T

IO
tot

amb

stg

sd

Rev. A3, 11–Jan–99 217

3.75 kV
250 mw

–55 to +100
–55 to +125

260

°

C

°

C

°

C

TCDT1110(G)

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector cut-off current VCE = 30 V, IF = 0 I

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter

saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 0.5 mA V

= 1

R

W

L

F

j

CEO
ECO

CEO

CEsat

f

c

k

1.2 1.5 V
50 pF

70 V

7 V

150 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 20 V, IF = 10 mA TCDT1110(G) CTR 1

Rev. A3, 11–Jan–99218