VISHAY TCDT1100G Technical data
TCDT1100(G) Series
Vishay Telefunken
Optocoupler with Phototransistor Output
Description
The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 6-lead plastic dual inline
package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65 Safety for mains-operated electronic and
related household apparatus
RMS
)
14827
nc
C
65
1
2
A (+) C (–) nc
E
4
94 9222
3
Order Instruction
Ordering Code CTR Ranking Remarks
TCDT1100/ TCDT1100G
TCDT1101/ TCDT1101G
TCDT1102/ TCDT1102G
TCDT1103/ TCDT1103G
1)
G = Leadform 10.16 mm; G is not market on the body
1)
1)
1)
1)
> 40%
40 to 80%
63 to 125%
100 to 200%
Rev. A3, 11–Jan–99208
Features
TCDT1100(G) Series
Vishay Telefunken
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
D
Creepage current resistance according to
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
= 6 kV peak
V
IOTM
D
Isolation test voltage (partial discharge test
voltage) V
D
Rated isolation voltage (RMS includes DC)
V
IOWM
D
Rated recurring peak voltage (repetitive)
V
IORM
= 1.6 kV
pd
= 600 V
= 600 V
(848 V peak)
RMS
RMS
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110/ resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
CTR offered in 4 groups
D
Base not connected
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
R
F
FSM
V
5 V
60 mA
3 A
100 mW
j
125
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
≤ 25°C P
amb
Junction temperature T
CEO
ECO
C
CM
V
j
32 V
7 V
50 mA
100 mA
150 mW
125
°
C
Coupler
Parameter Test Conditions Symbol V alue Unit
AC Isolation test voltage (RMS) t = 1 min V
Total power dissipation T
≤ 25°C P
amb
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case t ≤ 10 s T
IO
tot
amb
stg
sd
Rev. A3, 11–Jan–99 209
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
TCDT1100(G) Series
C F
CE F
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off
current
VCE = 20 V, If = 0, E = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
j
CEO
ECO
CEO
CEsat
f
c
k
1.25 1.6 V
50 pF
32 V
7 V
200 nA
0.3 V
110 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 10 mA TCDT1100(G) CTR 0.40
TCDT1101(G) CTR 0.40 0.80
TCDT1102(G) CTR 0.63 1.25
TCDT1103(G) CTR 1.00 2.00
Rev. A3, 11–Jan–99210
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