VISHAY TCDT1100G Technical data

TCDT1100(G) Series

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

Applications

Circuits for safe protective separation against electrical shock according to safety class II

(reinforced isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:

Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor

system interface.

VDE Standards

These couplers perform safety functions according to the following equipment standards:

D

VDE 0884 Optocoupler for electrical safety requirements

D

IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 V

D

VDE 0804 Telecommunication apparatus and data processing

D

IEC 65 Safety for mains-operated electronic and related household apparatus

RMS

)

14827

nc

C

65

1

2

A (+) C (–) nc

E

4

94 9222

3

Order Instruction

Ordering Code CTR Ranking Remarks TCDT1100/ TCDT1100G TCDT1101/ TCDT1101G TCDT1102/ TCDT1102G TCDT1103/ TCDT1103G

1)

G = Leadform 10.16 mm; G is not market on the body

1)

> 40%

40 to 80%

63 to 125%

100 to 200%

Rev. A3, 11–Jan–99208

Features

TCDT1100(G) Series

Vishay Telefunken

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950,

D

Creepage current resistance according to VDE 0303/IEC 1 12 Comparative Tracking Index: CTI = 275

D

Thickness through insulation ≥ 0.75 mm

Certificate number 12399

D

Underwriters Laboratory (UL) 1577 recognized, file number E-76222

D

VDE 0884, Certificate number 94778

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)

= 6 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test voltage) V

D

Rated isolation voltage (RMS includes DC) V

IOWM

D

Rated recurring peak voltage (repetitive) V

IORM

= 1.6 kV

pd

= 600 V

(848 V peak)

RMS

General features:

D

Isolation materials according to UL94-VO

D

Pollution degree 2 (DIN/VDE 0110/ resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection

D

Low temperature coefficient of CTR

D

CTR offered in 4 groups

D

Base not connected

D

Coupling System A

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit Reverse voltage V Forward current I Forward surge current tp ≤ 10 ms I Power dissipation T Junction temperature T

≤ 25°C P

amb

R

F

FSM

V

5 V

60 mA

3 A

100 mW

j

125

°

C

Output (Detector)

Parameter Test Conditions Symbol Value Unit Collector emitter voltage V Emitter collector voltage V Collector current I Collector peak current tp/T = 0.5, tp ≤ 10 ms I Power dissipation T

≤ 25°C P

amb

Junction temperature T

CEO ECO

C

CM

V

j

32 V

7 V

50 mA 100 mA 150 mW 125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit AC Isolation test voltage (RMS) t = 1 min V Total power dissipation T

≤ 25°C P

amb

Ambient temperature range T Storage temperature range T Soldering temperature 2 mm from case t ≤ 10 s T

IO tot

amb

stg

sd

Rev. A3, 11–Jan–99 209

3.75 kV 250 mW

–55 to +100 –55 to +125

260

°

C

°

C

°

C

TCDT1100(G) Series

C F

CE F

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Forward voltage IF = 50 mA V Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter voltage IC = 1 mA V Emitter collector voltage IE = 100 mA V Collector emitter cut-off

current

VCE = 20 V, If = 0, E = 0 I

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit Collector emitter

saturation voltage Cut-off frequency VCE = 5 V, IF = 10 mA,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 1 mA V

R

L

= 100

W

F

j

CEO ECO

CEO

CEsat

f

c

k

1.25 1.6 V 50 pF

32 V

7 V

200 nA

0.3 V

110 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 5 V, IF = 10 mA TCDT1100(G) CTR 0.40

TCDT1101(G) CTR 0.40 0.80 TCDT1102(G) CTR 0.63 1.25 TCDT1103(G) CTR 1.00 2.00

Rev. A3, 11–Jan–99210

TCDT1100(G) Series

gg

Tr test

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

≤ 25°C P

amb

Coupler

Parameters Test Conditions Symbol Value Unit Rated impulse voltage V Safety temperature T

si

IOTM

si

130 mA

265 mW

6 kV

150

°

C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage – Routine test

Partial discharge test voltage – tTr = 60 s, t Lot test (sample test)

Insulation resistance VIO = 500 V R

300

250

200

150

100

tot

P – Total Power Dissipation ( mW )

94 9182

50

0

0 25 50 75 125

IR-Diode Isi ( mA )

Tsi – Safety Temperature ( °C )

100%, t

(see figure 2)

VIO = 500 V, T

amb

VIO = 500 V, T

amb

(construction test only)

Phototransistor Psi ( mW )

100

= 1 s V

test

= 10 s, V

test

= 100°C

= 150°C

150

V

13930

IOTM

V

R

IOTM

V

Pd

IOWM

IORM

pd

pd IO IO

IO

1.6 kV

6 kV

1.3 kV 10 10

10

0

t

1

12 11

9

t1, t2= 1 to 10 s

t3, t4= 1 s t t

test stres

= 10 s = 12 s

tTr= 60 s

W W

W

t

test

4

3

t

stres

2

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

Rev. A3, 11–Jan–99 211

TCDT1100(G) Series

S C L

(g)

S F L

(g)

Vishay Telefunken

Switching Characteristics

Parameter Test Conditions Symbol Typ. Unit Delay time VS = 5 V, IC = 5 mA, RL = 100 W (see figure 3) t Rise time Fall time t Storage time t Turn-on time t Turn-off time t Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) t Turn-off time

d

t

r

f

s on off on

t

off

4.0

7.0

6.7

0.3

11.0

7.0

25.0

42.5

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

0

R

t

p

T

t

p

95 10900

I

= 50

G

+

0.01

= 50 ms

I

F

W

50

W

100

+ 5 V

= 5 mA; Adjusted trough

I

C

input amplitude

Channel I

Channel II

W

Figure 3. Test circuit, non-saturated operation

0

RG = 50

t

p

+

T t

= 50 ms

p

95 10843

0.01

I

F

W

50

W

IF = 10 mA

1 k

+ 5 V

I

C

Channel I

Channel II

W

Oscilloscope

R

≥ 1 M

W

L

C

≤ 20 pF

L

Oscilloscope

R

≥ 1 M

L

C

≤ 20 pF

L

96 11698

I

F

0

t

p

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

tion t

d

t

r

t

(= td + tr) turn-on time

on

W

pulse duradelay time

rise time

t

s

f

t

off

t

s

t

f

t

(= ts + tf) turn-off time

off

t

storage time fall time

Figure 5. Switching times

Figure 4. Test circuit, saturated operation

Rev. A3, 11–Jan–99212

TCDT1100(G) Series

)

Vishay Telefunken

Typical Characteristics (T

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

Figure 6. Total Power Dissipation vs.

1000.0

100.0

10.0

1.0

F

I – Forward Current ( mA )

0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 7. Forward Current vs. Forward Voltage

– Ambient Temperature (

amb

°

Ambient Temperature

VF – Forward Voltage ( V )96 11862

= 25_C, unless otherwise specified)

amb

10000

VCE=20V I

=0

1000

100

with open Base ( nA )

CEO

I – Collector Dark Current,

95 11026

F

10

1

0255075

T

– Ambient Temperature ( °C )

amb

Figure 9. Collector Dark Current vs.

Ambient Temperature

100

10

1

C

I – Collector Current ( mA )

0.1

0.1 1 10 V

95 11054

– Collector Emitter Voltage ( V )

CE

Figure 10. Collector Current vs. Collector Emitter Voltage

IF=50mA

100

20mA

10mA

5mA

2mA

1mA

100

1.5

VCE=5V

1.4

I

=10mA

F

1.3

1.2

1.1

1.0

0.9

0.8

0.7

rel

0.6

CTR – Relative Current Transfer Ratio

0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80

T

96 11920

– Ambient Temperature ( °C

amb

Figure 8. Relative Current Transfer Ratio vs.

Ambient Temperature

1.0

0.8

0.6

0.4

0.2

0

CEsat

V – Collector Emitter Saturation Voltage ( V

110

95 11055

IC – Collector Current ( mA )

CTR=50%

20%

10%

100

Figure 11. Collector Emitter Saturation Voltage vs.

Collector Current

Rev. A3, 11–Jan–99 213

TCDT1100(G) Series

Vishay Telefunken

1000

VCE=5V

100

10

CTR – Current Transfer Ratio ( % )

95 11057

1

0.1 1 10 IF – Forward Current ( mA )

100

Figure 12. Current Transfer Ratio vs. Forward Current

50

m

off

on

t / t – Turn on / Turn off Time ( s )

95 11017

40

30

20

Saturated Operation

V

=5V

10

S

R

=1k

W

L

0

0 5 10 15

– Forward Current ( mA )

I

F

t

off

t

on

20

Figure 13. Turn on / off Time vs. Forward Current

20

m

off

on

t / t – Turn on / Turn off Time ( s )

95 11016

t

on

15

t

off

10

5

0

02 46

– Collector Current ( mA )

I

C

Non Saturated

Operation V

=5V

S

RL=100

W

8

Figure 14. Turn on / off Time vs. Collector Current

Type

XXXXXX

Date

Code

(YM)

918 A TK 63

V

DE

Coupling

System

Indicator

Figure 15. Marking example

0884

Company

Logo

15090

10

Production

Location

Safety

Logo

Rev. A3, 11–Jan–99214

Dimensions of TCDT110.G in mm

weight: ca. 0.50 g

creepage distance:

air path:y 8 mm

TCDT1100(G) Series

Vishay Telefunken

y

8 mm

Dimensions of TCDT110. in mm

after mounting on PC board

14771

weight: 0.50 g

creepage distance:

air path:y 6 mm after mounting on PC board

y

6 mm

14770

Rev. A3, 11–Jan–99 215

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VISHAY TCDT1100G Technical data

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