Vishay T40HFL Series, T70HFL Series, T85HFL Series Data Sheet
Fast Recovery Diodes (T-Modules), 40 A/70 A/85 A
PRODUCT SUMMARY
I
F(AV)
Type Modules - Diode, Fast
D-55
40 A/70 A/85 A
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
FEATURES
• Fast recovery time characteristics
• Electrically isolated base plate
• 3500 V
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• Large creepage distances
• UL E78996 approved
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The series of T-modules uses fast recovery power diodes in
a single diode configuration. The semiconductors are
electrically isolated from the metal base, allowing common
heatsink and compact assemblies to be built.
These single diode modules can be used in conjunction with
the thyristor modules as a freewheel diode. Application
includes self-commutated inverters, DC choppers, motor
control, inductive heating and electronic welders. These
modules are intended for those applications where very fast
recovery characteristics are required and for general power
switching applications.
isolating voltage
RMS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
t
rr
T
J
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Revision: 19-May-10 DiodesAmericas@vishay.com
50 Hz 475 830 1300
60 Hz 500 870 1370
50 Hz 1130 3460 8550
60 Hz 1030 3160 7810
Range 100 to 1000 V
Range 200 to 1000 ns
Range - 40 to 125 °C
40 70 85 A
63 110 133 A
A
A2s
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
V
MAXIMUM REPETITIVE
TYPE NUMBER
VOLTAGE
CODE
t
rr
CODE
RRM,
PEAK REVERSE VOLTAGE
V
10 S02, S05, S10 100 150
20 S02, S05, S10 200 300
T40HFL..
T70HFL..
T85HFL..
40 S02, S05, S10 400 500
60 S02, S05, S10 600 700
80 S05, S10 800 900
100 S05, S10 1000 1100
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum average
forward current
at case temperature
Maximum RMS
forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A2√s
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward
voltage drop
I
F(AV)
I
F(RMS)
I
FSM
V
F(TO)1
V
F(TO)2
r
r
V
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms 500 870 1370
t = 10 ms
t = 8.3 ms 420 730 1150
t = 10 ms
t = 8.3 ms 1030 3160 7810
t = 10 ms
t = 8.3 ms 730 2230 5520
TJ = 25 °C, (16.7 % x π x I
TJ = 25 °C, (I > π x I
TJ = 25 °C, (16.7 % x π x I
f1
TJ = 25 °C, (I > π x I
f2
IFM = π x I
FM
Average power = V
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
) 0.84 0.90 0.86
F(AV)
< I < π x I
F(AV)
) 6.8 2.67 2.07
F(AV)
, TJ = 25 °C, tp = 400 μs square wave
F(AV)
F(TO)
x I
F(AV)
+ rf x (I
F(AV)
F(AV)
F(RMS)
RSM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
I
RRM
AT T
V
40 70 85 A
70 °C
63 110 133 A
475 830 1300
400 700 1100
1130 3460 8550
800 2450 6050
) 0.82 0.87 0.84
) 7.0 2.77 2.15
2
)
1.60 1.73 1.55 V
MAXIMUM
= 25 °C
J
μA
100
A
A
V
mΩ
2
s
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T40HFL, T70HFL, T85HFL Series
Fast Recovery Diodes
Vishay Semiconductors
(T-Modules), 40 A/70 A/85 A
REVERSE RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS
(1)
TJ = 25 °C, -dIF/dt = 100 A/μs
I
Maximum reverse
recovery time
t
rr
= 1 A to VR = 30 V
F
= 25 °C, -dIF/dt = 25 A/μs
T
J
= π x rated I
I
FM
, VR = - 30 V
F(AV)
TJ = 25 °C, -dIF/dt = 100 A/μs
= 1 A to VR = 30 V
Maximum reverse
recovery charge
Q
I
F
rr
= 25 °C, -dIF/dt = 25 A/μs
T
J
I
= π x rated I
FM
, VR = - 30 V
F(AV)
Note
(1)
Tested on LEM 300 A diodemeter tester
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Maximum peak reverse leakage current I
RMS isolation voltage V
RRM
ISOL
T40HFL T70HFL T85HFL
S02 S05 S10 S02 S05 S10 S02 S05 S10
70 110 270 70 110 270 80 120 290
200 500 1000 200 500 1000 200 500 1000
0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6
0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5
TJ = 125 °C 20 mA
50 Hz, circuit to base, all terminals
shorted, T
= 25 °C, t = 1 s
J
3500 V
UNITS
ns
μC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS
Junction operating temperature range T
Storage temperature range T
Maximum internal thermal resistance,
junction to case per module
Thermal resistance,
case to heatsink per module
R
R
base to heatsink
Mounting torque ± 10 %
busbar to terminal
Approximate weight
J
Stg
thJC
thCS
DC operation 0.85 0.53 0.46
Mounting surface, flat, smooth
and greased
M3.5 mounting screws
(1)
Non-lubricated threads
M5 screws terminals
Non-lubricated threads
See dimensions link at the end of datasheet
- 40 to 125
- 40 to 150
0.2
1.3 ± 10 %
3 ± 10 %
54 g
19 oz.
°C
K/W
Nm
Case style D-55 (T-module)
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of
the compound
ΔR CONDUCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
T40HFL 0.06 0.08 0.10 0.14 0.24 0.05 0.08 0.10 0.15 0.24
T85HFL 0.04 0.05 0.06 0.09 0.15 0.03 0.05 0.07 0.09 0.015
Note
• The table above shows the increment of thermal resistance R
Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com
MAXIMUM RECTANGULAR CONDUCTION AT TJ MAXIMUM
J
UNITS
K/WT70HFL 0.05 0.06 0.08 0.11 0.19 0.04 0.06 0.08 0.12 0.19
when devices operate at different conduction angles than DC
thJC
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T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
130
120
110
100
90
80
70
60
50
0 1020304050
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
0 10203040506070
Maximum Allowable Case Temperature (°C)
Fig. 2 - Current Ratings Characteristics
T4 0H FL. . Se r ie s
R (DC) = 0.85 K/W
thJC
Conduct ion Angle
30°
60°
90°
Average Forward Current (A)
T4 0HFL. . Se ri e s
R (DC) = 0.85 K/W
thJC
Cond uc tion Period
30°
60°
90°
120°
180°
Average Fo rward Current (A)
120°
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
180°
DC
130
120
110
100
90
80
70
60
50
Maxim um Allowa ble Case Temperature (°C)
0 20406080100120
Average Forward Current (A)
T7 0H FL. . Se ri e s
R (DC) = 0.53 K/ W
thJC
Conduction Period
30°
60°
90°
120°
180°
Fig. 4 - Current Ratings Characteristics
130
120
110
100
90
80
70
60
50
Maximum Allowable Case Temperature (°C)
0 102030405060708090
T8 5H FL. . Se r i e s
R (DC) = 0.46 K/W
thJC
Conduction Angle
30°
60°
90°
Avera ge Forwa rd Current (A)
Fig. 5 - Current Ratings Characteristics
DC
120°
180°
130
120
110
100
90
80
70
60
50
Maximum Allow able Case Temperature (°C)
0 1020304050607080
T7 0HFL . . Se ri e s
R (D C) = 0 .5 3 K/ W
thJC
Cond uct io n Angle
30°
60°
90°
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
120°
180°
130
120
110
100
90
80
70
60
50
Maximum Allowable Case Temperature (°C)
020406080100120140
Average Forward Current (A)
T8 5H FL. . Se r i e s
R ( DC ) = 0. 46 K/ W
thJC
Conduction Period
30°
60°
90°
120°
180°
Fig. 6 - Current Ratings Characteristics
DC
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T40HFL, T70HFL, T85HFL Series
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
Maximum Average Forward Power Lo ss (W)
180°
120°
90°
60°
30°
RM S Lim it
Conduc tion Angle
T4 0HFL .. Se ri e s
T = 12 5 ° C
J
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
90
DC
80
180°
120°
70
90°
60°
60
30°
50
RM S Lim it
40
30
20
10
0
0 10203040506070
Maximum Averag e Forward Power Lo ss (W)
Average Forward Current (A)
Conduct ion Period
T4 0H FL. . Se r ie s
T = 125°C
J
Fig. 8 - Forward Power Loss Characteristics
Fast Recovery Diodes
(T-Modules), 40 A/70 A/85 A
140
120
100
80
60
40
20
0
Maximum Average Forward Power Loss (W)
020406080100120
Fig. 10 - Forward Power Loss Characteristics
110
100
90
80
70
60
50
40
30
20
10
0
Maximum Average Forward Power Loss (W)
0 102030405060708090
Fig. 11 - Forward Power Loss Characteristics
Vishay Semiconductors
DC
180°
120°
90°
60°
30°
RM S Li m it
Cond uc tion Period
T70HFL.. Series
T = 1 25 ° C
Av e ra g e Fo rwa rd Curre nt (A)
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
T85HFL.. Series
T = 125°C
Average Forward Current (A)
J
J
100
90
80
70
60
50
40
30
20
10
0
Maximum Average Forward Power Loss (W)
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
T7 0H FL. . Se r ie s
T = 125° C
J
0 10203040506070
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
160
DC
180°
140
120°
90°
120
60°
30°
100
80
RM S Li m it
60
40
20
0
Maximum Average Forward Power Loss (W)
0 20 40 60 80 100 120 140
Average Forward Current (A)
Conduction Perio d
T85HFL.. Series
T = 1 25 °C
J
Fig. 12 - Forward Power Loss Characteristics
Document Number: 93184 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 19-May-10 DiodesAmericas@vishay.com
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